公开(公告)号：US20140248759A1

公开(公告)日：2014-09-04

申请号：US14275408

申请日：2014-05-12

Applicant: Applied Materials, Inc.

Inventor： Majeed A. FOAD ,  Manoj VELLAIKAL ,  Kartik SANTHANAM

IPC: H01L21/30 ,  H01L21/223

CPC classification number: H01L21/3003 ,  H01J37/32357 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02252 ,  H01L21/02274 ,  H01L21/2236 ,  H01L21/31662

Abstract: A method of preventing toxic gas formation after an implantation process is disclosed. Certain dopants, when implanted into films disposed on a substrate, may react when exposed to moisture to form a toxic gas and/or a flammable gas. By in-situ exposing the doped film to an oxygen containing compound, dopant that is shallowly implanted into the layer stack reacts to form a dopant oxide, thereby reducing potential toxic gas and/or flammable gas formation. Alternatively, a capping layer may be formed in-situ over the implanted film to reduce the potential generation of toxic gas and/or flammable gas.

Abstract translation: 公开了一种在注入工艺之后防止有毒气体形成的方法。 某些掺杂剂当植入设置在基材上的薄膜时，当暴露于水分时可能发生反应，形成有毒气体和/或可燃气体。 通过将掺杂的膜原位暴露于含氧化合物，浅层注入层堆叠的掺杂剂反应形成掺杂剂氧化物，从而减少潜在的有毒气体和/或可燃气体的形成。 或者，可以在植入膜上原位形成覆盖层以减少有毒气体和/或可燃气体的潜在产生。