公开(公告)号：US20040245091A1

公开(公告)日：2004-12-09

申请号：US10456611

申请日：2003-06-04

申请人： Applied Materials, Inc.

发明人： M Ziaul Karim ,  Bikram Kapoor ,  Anchuan Wang ,  DongQing Li ,  Katsunary Ozeki ,  Manoj Vellaikal ,  Zhuang Li

IPC分类号： C23C014/00 ,  C23C014/32 ,  C25B009/00 ,  C25B011/00

CPC分类号： H01L21/31612 ,  C23C16/045 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/76837

摘要： Abstract of the Disclosure A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H2 during the remainder deposition step. The higher average molecular weight of the fluent gas during the first deposition step provides some cusping over structures that define the gap to protect them during the etching step. The lower average molecular weight of the fluent gas during the remainder deposition step has reduced sputtering characteristics and is effective at filling the remainder of the gap.

摘要翻译： 公开的摘要使用HDP-CVD沉积，蚀刻和沉积步骤的循环来提供间隙填充方法。 在第一沉积步骤期间的流体气体包括诸如He的惰性气体，但在剩余沉积步骤期间包括H 2。 在第一沉积步骤期间流动气体的较高的平均分子量提供了一些限定在蚀刻步骤期间保护它们的间隙的结构。 在剩余沉积步骤期间流动气体的较低平均分子量具有降低的溅射特性，并且在填充间隙的剩余部分时是有效的。