公开(公告)号：US20040245091A1

公开(公告)日：2004-12-09

申请号：US10456611

申请日：2003-06-04

申请人： Applied Materials, Inc.

发明人： M Ziaul Karim ,  Bikram Kapoor ,  Anchuan Wang ,  DongQing Li ,  Katsunary Ozeki ,  Manoj Vellaikal ,  Zhuang Li

IPC分类号： C23C014/00 ,  C23C014/32 ,  C25B009/00 ,  C25B011/00

CPC分类号： H01L21/31612 ,  C23C16/045 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/76837

摘要： Abstract of the Disclosure A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H2 during the remainder deposition step. The higher average molecular weight of the fluent gas during the first deposition step provides some cusping over structures that define the gap to protect them during the etching step. The lower average molecular weight of the fluent gas during the remainder deposition step has reduced sputtering characteristics and is effective at filling the remainder of the gap.

摘要翻译： 公开的摘要使用HDP-CVD沉积，蚀刻和沉积步骤的循环来提供间隙填充方法。 在第一沉积步骤期间的流体气体包括诸如He的惰性气体，但在剩余沉积步骤期间包括H 2。 在第一沉积步骤期间流动气体的较高的平均分子量提供了一些限定在蚀刻步骤期间保护它们的间隙的结构。 在剩余沉积步骤期间流动气体的较低平均分子量具有降低的溅射特性，并且在填充间隙的剩余部分时是有效的。

公开(公告)号：US20040079728A1

公开(公告)日：2004-04-29

申请号：US10660813

申请日：2003-09-12

申请人： APPLIED MATERIALS, INC.

发明人： Hemant P. Mungekar ,  Anjana M. Patel ,  Manoj Vellaikal ,  Anchuan Wang ,  Bikram Kapoor

IPC分类号： C23F001/00

CPC分类号： C23C16/045 ,  C23C16/401 ,  C23C16/505 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31633

摘要： A film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a trench formed between adjacent raised surfaces. A first portion of the film is deposited over the substrate from a first gaseous mixture flowed into the process chamber by chemical-vapor deposition. Thereafter, the first portion is etched by flowing an etchant gas having a halogen precursor, a hydrogen precursor, and an oxygen precursor into the process chamber. Thereafter, a second portion of the film is deposited over the substrate from a second gaseous mixture flowed into the processing chamber by chemical-vapor deposition.

摘要翻译： 将膜沉积在设置在基板处理室中的基板上。 衬底具有形成在相邻的凸起表面之间的沟槽。 膜的第一部分通过化学气相沉积从流入处理室的第一气态混合物沉积在衬底上。 此后，通过使具有卤素前体，氢前体和氧前体的蚀刻剂气体流入处理室来蚀刻第一部分。 此后，膜的第二部分通过化学气相沉积从流过处理室的第二气态混合物沉积在衬底上。

公开(公告)号：US20020150682A1

公开(公告)日：2002-10-17

申请号：US10120713

申请日：2002-04-10

申请人： Applied Materials, Inc.

发明人： Hichem M'Saad ,  Dana Tribula ,  Manoj Vellaikal ,  Farhad Moghadam ,  Sameer Desai

IPC分类号： C23C016/00 ,  C23C008/00 ,  C23C010/10 ,  C23C016/24 ,  C23C016/08

CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31629

摘要： A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system. Silane (SiH4), silicon tetrafluoride (SiF4), oxygen (O2) and argon (Ar) are used as the reactant gases. SiH4, SiF4, and O2 react to form the FSG. Ar is introduced to promote gas dissociation. All four gases are used for depositing most of the FSG film. SiH4 is not used during deposition of the interfacial part of the FSG film. The interfacial part of the FSG film refers either to the topmost portion, if silicon nitride is to be deposited on top of the FSG or the bottom portion if the FSG is to be deposited on top of silicon nitride. Using SiH4 with the SiF4 tends to mitigate the destructive effects of SiF4 throughout most of the deposition. By removing the SiH4 from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the film in the interfacial region and adhesion to overlying or underlying silicon nitride is improved.

摘要翻译： 在HDP-CVD系统中形成对氮化硅具有良好粘附性的镶嵌FSG膜的方法。 使用硅烷（SiH 4），四氟化硅（SiF 4），氧（O 2）和氩（Ar）作为反应气体。 SiH4，SiF4和O2反应形成FSG。 引入Ar来促进气体分解。 所有四种气体都用于沉积大部分FSG膜。 在沉积FSG膜的界面部分期间不使用SiH4。 如果要将FSG沉积在氮化硅的顶部，则FSG膜的界面部分指的是最高部分，如果氮化硅沉积在FSG或底部的顶部。 SiF4与SiF4的共同作用倾向于减少SiF4在大部分沉积过程中的破坏作用。 通过从FSG膜的界面部分的沉积中除去SiH 4，在界面区域中较少的氢被引入到膜中，并且改善了覆盖或下面的氮化硅的粘合性。