公开(公告)号：US20230030436A1

公开(公告)日：2023-02-02

申请号：US17390151

申请日：2021-07-30

Applicant: Applied Materials, Inc.

Inventor： Jung Chan LEE ,  Mun Kyu PARK ,  Jun LEE ,  Euhngi LEE ,  Kyu-Ha SHIM ,  Deven Matthew Raj MITTAL ,  Sungho JO ,  Timothy MILLER ,  Jingmei LIANG ,  Praket Prakash JHA ,  Sanjay G. KAMATH

IPC: H01L21/02

Abstract: Embodiments of the present disclosure generally relate to methods for gap fill deposition and film densification on microelectronic devices. The method includes forming an oxide layer containing silicon oxide and having an initial wet etch rate (WER) over features disposed on the substrate, and exposing the oxide layer to a first plasma treatment to produce a treated oxide layer. The first plasma treatment includes generating a first plasma by a first RF source and directing the first plasma to the oxide layer by a DC bias. The method also includes exposing the treated oxide layer to a second plasma treatment to produce a densified oxide layer. The second plasma treatment includes generating a second plasma by top and side RF sources and directing the second plasma to the treated oxide layer without a bias. The densified oxide layer has a final WER of less than one-half of the initial WER.

公开(公告)号：US20240404823A1

公开(公告)日：2024-12-05

申请号：US18803673

申请日：2024-08-13

Applicant: Applied Materials, Inc.

Inventor： Jung chan LEE ,  Mun Kyu PARK ,  Jun LEE ,  Euhngi LEE ,  Kyu-Ha SHIM ,  Deven Matthew Raj MITTAL ,  Sungho JO ,  Timothy MILLER ,  Jingmei LIANG ,  Praket Prakash JHA ,  Sanjay G. KAMATH

IPC: H01L21/02

Abstract: Embodiments of the present disclosure generally relate to methods for gap fill deposition and film densification on microelectronic devices. The method includes forming an oxide layer containing silicon oxide and having an initial wet etch rate (WER) over features disposed on the substrate, and exposing the oxide layer to a first plasma treatment to produce a treated oxide layer. The first plasma treatment includes generating a first plasma and directing the first plasma to the oxide layer. The method also includes exposing the treated oxide layer to a second plasma treatment to produce a densified oxide layer. The second plasma treatment includes generating a second plasma and directing the second plasma to the treated oxide layer. The densified oxide layer has a final WER of less than one-half of the initial WER.

公开(公告)号：US20240404887A1

公开(公告)日：2024-12-05

申请号：US18327048

申请日：2023-05-31

Applicant: Applied Materials, Inc.

Inventor： Yan ZHANG ,  Kyu-Ha SHIM ,  Johannes M. VAN MEER ,  Naushad K. VARIAM

IPC: H01L21/8238 ,  H01L21/265

Abstract: Approaches herein provide devices and methods for forming gate-all-around transistors with improved NBTI. One method may include forming a gate-all-around (GAA) stack including a plurality of alternating first layers and second layers, and forming a source/drain (S/D) cavity through the plurality of alternating first layers and second layers. The method may further include forming an inner spacer in the S/D cavity, adjacent the plurality of alternating first layers and second layers, performing a first implant by directing fluorine ions to the GAA stack, through the S/D cavity, and forming a S/D material in the S/D cavity following the first implant.

公开(公告)号：US20240021433A1

公开(公告)日：2024-01-18

申请号：US17965727

申请日：2022-10-13

Applicant: Applied Materials, Inc.

Inventor： Scott FALK ,  Rajesh PRASAD ,  Sarah Michelle BOBEK ,  Harry WHITESELL ,  Kurt DECKER-LUCKE ,  Kyu-Ha SHIM ,  Adaeze OSONKIE ,  Tomohiko KITAJIMA

IPC: H01L21/3115 ,  H01L21/311 ,  H01L21/266 ,  H01L21/308

CPC classification number: H01L21/31155 ,  H01L21/31116 ,  H01L21/266 ,  H01L21/3086

Abstract: Methods for depositing a hardmask with ions implanted at different tilt angles are described herein. By performing ion implantation to dope an amorphous carbon hardmask at multiple tilt angles, an evenly distributed dopant profiled can be created. The implant tilt angle will determine a dopant profile that enhances the carbon hardmask hardness.