公开(公告)号：US20190172714A1

公开(公告)日：2019-06-06

申请号：US16188514

申请日：2018-11-13

申请人： Applied Materials, Inc.

发明人： Sarah BOBEK ,  Prashant KUMAR KULSHRESHTHA ,  Rajesh PRASAD ,  Kwangduk Douglas LEE ,  Harry WHITESELL ,  Hidetaka OSHIO ,  Dong Hyung LEE ,  Deven Matthew Raj MITTAL

IPC分类号： H01L21/033 ,  C23C16/505 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02 ,  H01L21/3115 ,  H01L21/311

摘要： Implementations described herein generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of amorphous carbon films on a substrate. In one implementation, a method of forming an amorphous carbon film is provided. The method comprises depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further comprises implanting a dopant or inert species into the amorphous carbon film in a second processing region. The dopant or inert species is selected from carbon, boron, nitrogen, silicon, phosphorous, argon, helium, neon, krypton, xenon or combinations thereof. The method further comprises patterning the doped amorphous carbon film. The method further comprises etching the underlayer.

公开(公告)号：US20230041963A1

公开(公告)日：2023-02-09

申请号：US17963841

申请日：2022-10-11

申请人： Applied Materials, Inc.

发明人： Rajesh PRASAD ,  Sarah BOBEK ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Harry WHITESELL ,  Hidetaka OSHIO ,  Dong Hyung LEE ,  Deven Matthew Raj MITTAL ,  Scott FALK ,  Venkataramana R. CHAVVA

IPC分类号： H01L21/033 ,  C23C16/505 ,  C23C16/26 ,  C23C16/56 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3115

摘要： Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.

公开(公告)号：US20240021433A1

公开(公告)日：2024-01-18

申请号：US17965727

申请日：2022-10-13

申请人： Applied Materials, Inc.

发明人： Scott FALK ,  Rajesh PRASAD ,  Sarah Michelle BOBEK ,  Harry WHITESELL ,  Kurt DECKER-LUCKE ,  Kyu-Ha SHIM ,  Adaeze OSONKIE ,  Tomohiko KITAJIMA

IPC分类号： H01L21/3115 ,  H01L21/311 ,  H01L21/266 ,  H01L21/308

CPC分类号： H01L21/31155 ,  H01L21/31116 ,  H01L21/266 ,  H01L21/3086

摘要： Methods for depositing a hardmask with ions implanted at different tilt angles are described herein. By performing ion implantation to dope an amorphous carbon hardmask at multiple tilt angles, an evenly distributed dopant profiled can be created. The implant tilt angle will determine a dopant profile that enhances the carbon hardmask hardness.

公开(公告)号：US20230029929A1

公开(公告)日：2023-02-02

申请号：US17963059

申请日：2022-10-10

申请人： Applied Materials, Inc.

发明人： Rajesh PRASAD ,  Sarah BOBEK ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Harry WHITESELL ,  Hidetaka OSHIO ,  Dong Hyung LEE ,  Deven Matthew Raj MITTAL ,  Scott FALK ,  Venkataramana R. CHAVVA

IPC分类号： H01L21/033 ,  C23C16/505 ,  C23C16/26 ,  C23C16/56 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3115

摘要： Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.