公开(公告)号：US20230272525A1

公开(公告)日：2023-08-31

申请号：US18143648

申请日：2023-05-05

Applicant: Applied Materials, Inc.

Inventor： Sarah Michelle BOBEK ,  Abdul Aziz KHAJA ,  Ratsamee LIMDULPAIBOON ,  Kwangduk Douglas LEE

IPC: C23C16/44 ,  C23C16/32

CPC classification number: C23C16/4404 ,  C23C16/325 ,  H01L21/0337

Abstract: The present disclosure relates to a method for in situ seasoning of process chamber components, such as electrodes. The method includes depositing a silicon oxide film over the process chamber component and converting the silicon oxide film to a silicon-carbon-containing film. The silicon-carbon-containing film forms a protective film over the process chamber components and is resistant to plasma processing and/or dry etch cleaning. The coatings has high density, good emissivity control, and reduces risk of device property drift.

公开(公告)号：US20230386883A1

公开(公告)日：2023-11-30

申请号：US18233751

申请日：2023-08-14

Applicant: Applied Materials, Inc.

Inventor： Liangfa HU ,  Abdul Aziz KHAJA ,  Sarah Michelle BOBEK ,  Prashant Kumar KULSHRESHTHA ,  Yoichi SUZUKI

IPC: H01L21/683 ,  H01L21/26 ,  H01L21/687

CPC classification number: H01L21/6833 ,  H01L21/26 ,  H01L21/68735

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for reducing substrate backside damage during semiconductor device processing. In one implementation, a method of chucking a substrate in a substrate process chamber includes exposing the substrate to a plasma preheat treatment prior to applying a chucking voltage to a substrate support. In one implementation, a substrate support is provided and includes a body having an electrode and thermal control device disposed therein. A plurality of substrate supporting features are formed on an upper surface of the body, each of the substrate supporting features having a substrate supporting surface and a rounded edge.

公开(公告)号：US20230317463A1

公开(公告)日：2023-10-05

申请号：US18206037

申请日：2023-06-05

Applicant: Applied Materials, Inc.

Inventor： Krishna NITTALA ,  Sarah Michelle BOBEK ,  Kwangduk Douglas LEE ,  Ratsamee LIMDULPAIBOON ,  Dimitri KIOUSSIS ,  Karthik JANAKIRAMAN

IPC: H01L21/308 ,  H01L21/324 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/3081 ,  H01L21/324 ,  H01L21/67069 ,  H01L21/67207 ,  H01L21/67115 ,  H01L21/3065

Abstract: Aspects generally relate to methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers. In one aspect, film stress is altered while facilitating enhanced etch selectivity. In one implementation, a method of processing a substrate includes depositing one or more amorphous carbon hardmask layers onto the substrate, and conducting a rapid thermal anneal operation on the substrate after depositing the one or more amorphous carbon hardmask layers. The rapid thermal anneal operation lasts for an anneal time that is 60 seconds or less. The rapid thermal anneal operation includes heating the substrate to an anneal temperature that is within a range of 600 degrees Celsius to 1,000 degrees Celsius. The method includes etching the substrate after conducting the rapid thermal anneal operation.

公开(公告)号：US20230203659A1

公开(公告)日：2023-06-29

申请号：US18111842

申请日：2023-02-20

Applicant: Applied Materials, Inc.

Inventor： Sarah Michelle BOBEK ,  Venkata Sharat Chandra PARIMI ,  Prashant Kumar KULSHRESHTHA ,  Vinay K. PRABHAKAR ,  Kwangduk Douglas LEE ,  Sungwon HA ,  Jian LI

IPC: C23C16/458 ,  C23C16/46

CPC classification number: C23C16/4586 ,  C23C16/46 ,  C23C16/4585

Abstract: Aspects of the present disclosure relate generally to pedestals, components thereof, and methods of using the same for substrate processing chambers. In one implementation, a pedestal for disposition in a substrate processing chamber includes a body. The body includes a support surface. The body also includes a stepped surface that protrudes upwards from the support surface. The stepped surface is disposed about the support surface to surround the support surface. The stepped surface defines an edge ring such that the edge ring is integrated with the pedestal to form the body that is monolithic. The pedestal also includes an electrode disposed in the body, and one or more heaters disposed in the body.

公开(公告)号：US20220098728A1

公开(公告)日：2022-03-31

申请号：US17036865

申请日：2020-09-29

Applicant: Applied Materials, Inc.

Inventor： Sarah Michelle BOBEK ,  Abdul Aziz Khaja ,  Ratsamee Limdulpaiboon ,  Kwangduk Douglas Lee

IPC: C23C16/44 ,  C23C16/32

Abstract: The present disclosure relates to a method for in situ seasoning of process chamber components, such as electrodes. The method includes depositing a silicon oxide film over the process chamber component and converting the silicon oxide film to a silicon-carbon-containing film. The silicon-carbon-containing film forms a protective film over the process chamber components and is resistant to plasma processing and/or dry etch cleaning. The coatings has high density, good emissivity control, and reduces risk of device property drift.

公开(公告)号：US20240021433A1

公开(公告)日：2024-01-18

申请号：US17965727

申请日：2022-10-13

Applicant: Applied Materials, Inc.

Inventor： Scott FALK ,  Rajesh PRASAD ,  Sarah Michelle BOBEK ,  Harry WHITESELL ,  Kurt DECKER-LUCKE ,  Kyu-Ha SHIM ,  Adaeze OSONKIE ,  Tomohiko KITAJIMA

IPC: H01L21/3115 ,  H01L21/311 ,  H01L21/266 ,  H01L21/308

CPC classification number: H01L21/31155 ,  H01L21/31116 ,  H01L21/266 ,  H01L21/3086

Abstract: Methods for depositing a hardmask with ions implanted at different tilt angles are described herein. By performing ion implantation to dope an amorphous carbon hardmask at multiple tilt angles, an evenly distributed dopant profiled can be created. The implant tilt angle will determine a dopant profile that enhances the carbon hardmask hardness.

公开(公告)号：US20220262643A1

公开(公告)日：2022-08-18

申请号：US17179103

申请日：2021-02-18

Applicant: Applied Materials, Inc.

Inventor： Krishna NITTALA ,  Sarah Michelle BOBEK ,  Kwangduk Douglas LEE ,  Ratsamee LIMDULPAIBOON ,  Dimitri KIOUSSIS ,  Karthik JANAKIRAMAN

IPC: H01L21/308 ,  H01L21/324 ,  H01L21/3065 ,  H01L21/67

Abstract: Aspects generally relate to methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers. In one aspect, film stress is altered while facilitating enhanced etch selectivity. In one implementation, a method of processing a substrate includes depositing one or more amorphous carbon hardmask layers onto the substrate, and conducting a rapid thermal anneal operation on the substrate after depositing the one or more amorphous carbon hardmask layers. The rapid thermal anneal operation lasts for an anneal time that is 60 seconds or less. The rapid thermal anneal operation includes heating the substrate to an anneal temperature that is within a range of 600 degrees Celsius to 1,000 degrees Celsius. The method includes etching the substrate after conducting the rapid thermal anneal operation.

公开(公告)号：US20190341227A1

公开(公告)日：2019-11-07

申请号：US16403489

申请日：2019-05-03

Applicant: Applied Materials, Inc.

Inventor： Satya THOKACHICHU ,  Edward P. HAMMOND, IV ,  Viren KALSEKAR ,  Zheng John YE ,  Sarah Michelle BOBEK ,  Abdul Aziz KHAJA ,  Vinay K. PRABHAKAR ,  Venkata Sharat Chandra PARIMI ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/285 ,  C23C16/509 ,  C23C16/46

Abstract: One or more embodiments described herein generally relate to selective deposition of substrates in semiconductor processes. In these embodiments, a precursor is delivered to a process region of a process chamber. A plasma is generated by delivering RF power to an electrode within a substrate support surface of a substrate support disposed in the process region of the process chamber. In embodiments described herein, delivering the RF power at a high power range, such as greater than 4.5 kW, advantageously leads to greater plasma coupling to the electrode, resulting in selective deposition to the substrate, eliminating deposition on other process chamber areas such as the process chamber side walls. As such, less process chamber cleans are necessary, leading to less time between depositions, increasing throughput and making the process more cost-effective.

公开(公告)号：US20200328063A1

公开(公告)日：2020-10-15

申请号：US16848553

申请日：2020-04-14

Applicant: Applied Materials, Inc.

Inventor： Sarah Michelle BOBEK ,  Venkata Sharat Chandra PARIMI ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE

IPC: H01J37/32 ,  H01L21/683

Abstract: One or more embodiments described herein generally relate to methods for chucking and de-chucking a substrate to/from an electrostatic chuck used in a semiconductor processing system. Generally, in embodiments described herein, the method includes: (1) applying a first voltage from a direct current (DC) power source to an electrode disposed within a pedestal; (2) introducing process gases into a process chamber; (3) applying power from a radio frequency (RF) power source to a showerhead; (4) performing a process on the substrate; (5) stopping application of the RF power; (6) removing the process gases from the process chamber; and (7) stopping applying the DC power.

公开(公告)号：US20200249263A1

公开(公告)日：2020-08-06

申请号：US16748640

申请日：2020-01-21

Applicant: Applied Materials, Inc.

Inventor： Lu XU ,  Sarah Michelle BOBEK ,  Prashant Kumar KULSHRESHTHA ,  Byung Seok KWON ,  Venkata Sharat Chandra PARIMI ,  Kwangduk Douglas LEE ,  Juan Carlos ROCHA-ALVAREZ

IPC: G01R29/12 ,  C23C16/52 ,  H01L21/66 ,  H01J37/32

Abstract: Embodiments described herein relate to methods and tools for monitoring electrostatic chucking performance. A performance test is performed that requires only one bowed substrate and one reference substrate. To run the test, the reference substrate is positioned on an electrostatic chuck in a process chamber and the bowed substrate is positioned on the reference substrate. A voltage is applied from a power source to the electrostatic chuck, generating an electrostatic chucking force to secure the bowed substrate to the reference substrate. Thereafter, the applied voltage is decreased incrementally until the electrostatic chucking force is too weak to maintain the bowed substrate in flat form, resulting in dechucking of the bowed wafer. By monitoring the impedance of the chamber during deposition using a sensor, the dechucking threshold voltage can be identified at the point where the impedance of the reference substrate and the impedance of the bowed substrate deviates.