公开(公告)号：US20230057145A1

公开(公告)日：2023-02-23

申请号：US17831781

申请日：2022-06-03

Applicant: Applied Materials, Inc.

Inventor： DAISUKE SHIMIZU ,  Kenji Takeshita ,  James D. Carducci ,  Li Ling ,  Hikaru Watanabe ,  Kenneth S. Collins ,  Michael R. Rice

IPC: H01J37/32 ,  H01L21/3065

Abstract: A plasma treatment chamber comprises one or more sidewalls and a support surface within the sidewalls holds a workpiece. An array of individual gas injectors is distributed about the sidewalls. Pump ports are along the sidewalls to eject gas from the chamber. Aa etch rate uniformity of a material on the workpiece is controlled by: using the array gas injectors to inject one or more gas flows in across the workpiece; injecting a first gas flow from a first set of adjacent individual gas injectors to etch the materials on the workpiece; and simultaneously injecting a second gas flow from remaining gas injectors. The second gas flow either dilutes the first gas flow to reduce an area on the workpiece having a faster etch rate, or acts as an additional etchant to increase the etch rate in the area of the workpiece having the faster etch rate.

公开(公告)号：US09748366B2

公开(公告)日：2017-08-29

申请号：US14491828

申请日：2014-09-19

Applicant: Applied Materials, Inc.

Inventor： Jong Mun Kim ,  Kenny L. Doan ,  Li Ling ,  Jairaj Payyapilly ,  Srinivas D. Nemani ,  Daisuke Shimizu ,  Yuju Huang

IPC: H01L21/31 ,  H01L29/66 ,  H01L21/311

CPC classification number: H01L29/66833 ,  H01L21/31116

Abstract: An article having alternating oxide layers and nitride layers is etched by an etch process. The etch process includes providing a first gas comprising C4F6H2 in a chamber of an etch reactor, ionizing the C4F6H2 containing gas to produce a plasma comprising a plurality of ions, and etching the article using the plurality of ions.

公开(公告)号：US10410845B2

公开(公告)日：2019-09-10

申请号：US15821661

申请日：2017-11-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Kenny Linh Doan ,  Usama Dadu ,  Wonseok Lee ,  Daisuke Shimizu ,  Li Ling ,  Kevin Choi

IPC: H01L21/00 ,  H01J37/32 ,  H02N13/00 ,  H01L21/683 ,  B08B5/00 ,  B08B7/00 ,  H01L21/67

Abstract: Embodiments include a plasma processing method for cleaning polymer byproducts from interior surfaces of the plasma chamber. In an embodiment the plasma process may include processing a workpiece in a plasma processing chamber. Thereafter, the method may include removing the workpiece from the processing chamber. After the workpiece is removed, embodiments may include cleaning the plasma processing chamber with a cleaning process that includes a high pressure cleaning process, a first low pressure cleaning process, and a second low pressure cleaning process, wherein the second low pressure cleaning process includes applying a pulsed bias.

公开(公告)号：US20190157052A1

公开(公告)日：2019-05-23

申请号：US15821661

申请日：2017-11-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Kenny Linh DOAN ,  Usama Dadu ,  Wonseok Lee ,  Daishuke Shimizu ,  Li Ling ,  Kevin Choi

IPC: H01J37/32 ,  H02N13/00 ,  H01L21/683 ,  B08B5/00 ,  B08B7/00

CPC classification number: H01J37/32862 ,  B08B5/00 ,  B08B7/0071 ,  H01J37/32146 ,  H01J37/32724 ,  H01J37/32816 ,  H01L21/67069 ,  H01L21/6831 ,  H02N13/00

Abstract: Embodiments include a plasma processing method for cleaning polymer byproducts from interior surfaces of the plasma chamber. In an embodiment the plasma process may include processing a workpiece in a plasma processing chamber. Thereafter, the method may include removing the workpiece from the processing chamber. After the workpiece is removed, embodiments may include cleaning the plasma processing chamber with a cleaning process that includes a high pressure cleaning process, a first low pressure cleaning process, and a second low pressure cleaning process, wherein the second low pressure cleaning process includes applying a pulsed bias.

公开(公告)号：US20150097276A1

公开(公告)日：2015-04-09

申请号：US14491828

申请日：2014-09-19

Applicant: Applied Materials, Inc.

Inventor： Jong Mun Kim ,  Kenny L. Doan ,  Li Ling ,  Jairaj Payyapilly ,  Srinivas D. Nemani ,  Daisuke Shimizu ,  Yuju Huang

IPC: H01L29/792 ,  H01L21/66 ,  H01L21/3065

CPC classification number: H01L29/66833 ,  H01L21/31116

Abstract: An article having alternating oxide layers and nitride layers is etched by an etch process. The etch process includes providing a first gas comprising C4F6H2 in a chamber of an etch reactor, ionizing the C4F6H2 containing gas to produce a plasma comprising a plurality of ions, and etching the article using the plurality of ions.

Abstract translation: 通过蚀刻工艺蚀刻具有交替的氧化物层和氮化物层的制品。 蚀刻工艺包括在蚀刻反应器的室中提供包含C 4 F 6 H 2的第一气体，使含有C 4 F 6 H 2的气体电离以产生包含多个离子的等离子体，并使用多个离子蚀刻该制品。

公开(公告)号：US09872373B1

公开(公告)日：2018-01-16

申请号：US15415129

申请日：2017-01-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Daisuke Shimizu ,  Wonseok Lee ,  Katsumasa Kawasaki ,  Li Ling ,  Justin Phi ,  Kevin Choi

IPC: H05H1/46

CPC classification number: H05H1/46 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32128 ,  H01J37/32146 ,  H05H2001/4645

Abstract: Methods of operating a plasma enhanced substrate processing system using multi-level pulsed RF power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using multi-level pulsed RF power includes providing a first multi-level RF power waveform to a process chamber, the first multi-level RF power waveform having at least a first power level, a second power level, and a third power level, providing, after a first delay period, a second multi-level RF power waveform to the process chamber, the second multi-level RF power waveform having at least a first power level, a second power level, and a third power level, and processing the substrate using the first multi-level RF power waveform and the second multi-level RF power waveform to produce a features on the substrate have an aspect ratio of greater than 60:1 while maintaining an etch rate of greater than 170 nm/min.