公开(公告)号：US20220093371A1

公开(公告)日：2022-03-24

申请号：US17026885

申请日：2020-09-21

Applicant: Applied Materials, Inc.

Inventor： Zubin Huang ,  Truong Van Nguyen ,  Rui Cheng ,  Diwakar Kedlaya ,  Manjunath Veerappa Chobari Patil ,  Prashant A. Desai ,  Paul L. Brillhart ,  Karthik Janakiraman ,  Pavan Kumar Murali Kumar

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/458 ,  C23C16/44

Abstract: Exemplary semiconductor processing systems include a chamber body having sidewalls and a base. The systems may include a substrate support extending through the base. The substrate support may include a support plate defining lift pin locations and a shaft coupled with the support plate. The systems may include a shield coupled with the shaft and extending below the support plate. The shield may define a central aperture that extends beyond an outer periphery of the shaft. The systems may include a purge baffle coupled with the shield at a position that is beyond the central aperture such that a space between the purge baffle and the shaft is in fluid communication with a space between the shield and the support plate. The purge baffle may extend along at least a portion of the shaft. The systems may include a purge gas source coupled with the purge baffle.

公开(公告)号：US20220199373A1

公开(公告)日：2022-06-23

申请号：US17127201

申请日：2020-12-18

Applicant: Applied Materials, Inc.

Inventor： Venkata Sharat Chandra Parimi ,  Zubin Huang ,  Manjunath Veerappa Chobari Patil ,  Nitin Pathak ,  Yi Yang ,  Badri N. Ramamurthi ,  Truong Van Nguyen ,  Rui Cheng ,  Diwakar Kedlaya

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/458 ,  C23C16/44

Abstract: Exemplary semiconductor processing chambers include a chamber body defining a processing region. The chambers may include a substrate support disposed within the processing region. The substrate support may have an upper surface that defines a recessed substrate seat. The chambers may include a shadow ring disposed above the substrate seat and the upper surface. The shadow ring may extend about a peripheral edge of the substrate seat. The chambers may include bevel purge openings defined within the substrate support proximate the peripheral edge. A bottom surface of the shadow ring may be spaced apart from a top surface of the upper surface to form a purge gas flow path that extends from the bevel purge openings along the shadow ring. A space formed between the shadow ring and the substrate seat may define a process gas flow path. The gas flow paths may be in fluid communication with one another.

公开(公告)号：US20220108891A1

公开(公告)日：2022-04-07

申请号：US17064389

申请日：2020-10-06

Applicant: Applied Materials, Inc.

Inventor： Zubin Huang ,  Manjunath Veerappa Chobari Patil ,  Diwakar Kedlaya ,  Truong Van Nguyen ,  Pavan Kumar Murali Kumar ,  Subrahmanyam Veerisetty ,  Venkata Sharat Chandra Parimi ,  Fang Ruan

IPC: H01L21/033 ,  H01J37/32 ,  C23C16/50 ,  C23C16/455 ,  H01L21/02 ,  C23C16/04

Abstract: Exemplary semiconductor processing chambers may include a faceplate assembly characterized by at least one surface defining a number of voids. Each void is configured to receive an interchangeable thermal body that can be selected from multiple interchangeable thermal bodies. Exemplary semiconductor processing chambers may also include a gas box characterized by movable members. Each movable member is configured to engage a delivery port and is movable to provide flow control for a gas being delivered to the processing volume through a gas flow path. Zoned flow and/or temperature control may be provided by the faceplate assembly, the gas box, or both.