公开(公告)号：US12012653B2

公开(公告)日：2024-06-18

申请号：US17210018

申请日：2021-03-23

Applicant: Applied Materials, Inc.

Inventor： Yuxing Zhang ,  Tuan Anh Nguyen ,  Amit Kumar Bansal ,  Nitin Pathak ,  Saket Rathi ,  Thomas Rubio ,  Udit S. Kotagi ,  Badri N. Ramamurthi ,  Dharma Ratnam Srichurnam

IPC: C23C16/44 ,  C23C16/455

CPC classification number: C23C16/4405 ,  C23C16/45563

Abstract: The present disclosure relates to a cleaning assemblies, components thereof, and methods associated therewith for substrate processing chambers. In one example, a cleaning assembly for a substrate processing chamber includes a distribution ring. The distribution ring comprises a body with an inlet and an outlet. The outlet is fluidly coupled to an internal volume of the substrate processing chamber via a sidewall of the substrate processing chamber. The cleaning assembly includes a cleaning conduit configured to fluidly couple a gas manifold to the distribution ring for diverting a first portion of cleaning fluid from the gas manifold to the distribution ring.

公开(公告)号：US11952663B2

公开(公告)日：2024-04-09

申请号：US18313736

申请日：2023-05-08

Applicant: Applied Materials, Inc.

Inventor： Nitin Pathak ,  Tuan A. Nguyen ,  Amit Bansal ,  Badri N. Ramamurthi ,  Thomas Rubio ,  Juan Carlos Rocha-Alvarez

IPC: C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46

CPC classification number: C23C16/45559 ,  C23C16/4412 ,  C23C16/4585 ,  C23C16/46

Abstract: Exemplary semiconductor processing chambers may include a substrate support including a top surface. A peripheral edge region of the top surface may be recessed relative to a medial region of the top surface. The chambers may include a pumping liner disposed about an exterior surface of the substrate support. The chambers may include a liner disposed between the substrate support and the pumping liner. The liner may be spaced apart from the exterior surface to define a purge lumen between the liner and the substrate support. The chambers may include an edge ring seated on the peripheral edge region. The edge ring may extend beyond a peripheral edge of the substrate support and above a portion of the liner. A gap may be formed between a bottom surface of the edge ring and a top surface of the liner. The gap and the purge lumen may be fluidly coupled.

公开(公告)号：US20220310360A1

公开(公告)日：2022-09-29

申请号：US17213947

申请日：2021-03-26

Applicant: Applied Materials, Inc.

Inventor： Saket Rathi ,  Tuan A. Nguyen ,  Amit Bansal ,  Yuxing Zhang ,  Badri N. Ramamurthi ,  Nitin Pathak ,  Abdul Aziz Khaja ,  Sarah Michelle Bobek

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50

Abstract: Exemplary semiconductor processing systems may include an output manifold that defines at least one plasma outlet. The systems may include a gasbox disposed beneath the output manifold. The gasbox may include an inlet side facing the output manifold and an outlet side opposite the inlet side. The gasbox may include an inner wall that defines a central fluid lumen. The inner wall may taper outward from the inlet side to the outlet side. The systems may include an annular spacer disposed below the gasbox. An inner diameter of the annular spacer may be greater than a largest inner diameter of the central fluid lumen. The systems may include a faceplate disposed beneath the annular spacer. The faceplate may define a plurality of apertures extending through a thickness of the faceplate.

公开(公告)号：US20230392259A1

公开(公告)日：2023-12-07

申请号：US18313736

申请日：2023-05-08

Applicant: Applied Materials, Inc.

Inventor： Nitin Pathak ,  Tuan A. Nguyen ,  Amit Bansal ,  Badri N. Ramamurthi ,  Thomas Rubio ,  Juan Carlos Rocha-Alvarez

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/458

CPC classification number: C23C16/45559 ,  C23C16/46 ,  C23C16/4585 ,  C23C16/4412

Abstract: Exemplary semiconductor processing chambers may include a substrate support including a top surface. A peripheral edge region of the top surface may be recessed relative to a medial region of the top surface. The chambers may include a pumping liner disposed about an exterior surface of the substrate support. The chambers may include a liner disposed between the substrate support and the pumping liner. The liner may be spaced apart from the exterior surface to define a purge lumen between the liner and the substrate support. The chambers may include an edge ring seated on the peripheral edge region. The edge ring may extend beyond a peripheral edge of the substrate support and above a portion of the liner. A gap may be formed between a bottom surface of the edge ring and a top surface of the liner. The gap and the purge lumen may be fluidly coupled.

公开(公告)号：US20220307135A1

公开(公告)日：2022-09-29

申请号：US17214011

申请日：2021-03-26

Applicant: Applied Materials, Inc.

Inventor： Nitin Pathak ,  Tuan A. Nguyen ,  Amit Bansal ,  Badri N. Ramamurthi ,  Thomas Rubio ,  Juan Carlos Rocha-Alvarez

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/44

Abstract: Exemplary semiconductor processing chambers may include a substrate support including a top surface. A peripheral edge region of the top surface may be recessed relative to a medial region of the top surface. The chambers may include a pumping liner disposed about an exterior surface of the substrate support. The chambers may include a liner disposed between the substrate support and the pumping liner. The liner may be spaced apart from the exterior surface to define a purge lumen between the liner and the substrate support. The chambers may include an edge ring seated on the peripheral edge region. The edge ring may extend beyond a peripheral edge of the substrate support and above a portion of the liner. A gap may be formed between a bottom surface of the edge ring and a top surface of the liner. The gap and the purge lumen may be fluidly coupled.

公开(公告)号：US20220028710A1

公开(公告)日：2022-01-27

申请号：US16934227

申请日：2020-07-21

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Yang Guo ,  Seyyed Abdolreza Fazeli ,  Nitin Pathak ,  Badri N. Ramamurthi ,  Kallol Bera ,  Xiaopu Li ,  Philip A. Kraus ,  Swaminathan T. Srinivasan

IPC: H01L21/67 ,  B65G47/90

Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body along a first surface of the first lid plate. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of apertures of the plurality of apertures defined through the first lid plate. The systems may include a plurality of isolators. An isolator of the plurality of isolators may be positioned between each lid stack of the plurality of lid stacks and a corresponding aperture of the plurality of apertures defined through the first lid plate. The systems may include a plurality of dielectric plates. A dielectric plate of the plurality of dielectric plates may be seated on each isolator of the plurality of isolators.

公开(公告)号：US20230402261A1

公开(公告)日：2023-12-14

申请号：US18457061

申请日：2023-08-28

Applicant: Applied Materials, Inc.

Inventor： Saket Rathi ,  Tuan A. Nguyen ,  Amit Bansal ,  Yuxing Zhang ,  Badri N. Ramamurthi ,  Nitin Pathak ,  Abdul Aziz Khaja ,  Sarah Michelle Bobek

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  C23C16/44

CPC classification number: H01J37/32449 ,  H01J37/32357 ,  H01J37/32862 ,  C23C16/45502 ,  C23C16/50 ,  C23C16/45591 ,  C23C16/4405 ,  H01J2237/332

Abstract: Exemplary semiconductor processing systems may include an output manifold that defines at least one plasma outlet. The systems may include a gasbox disposed beneath the output manifold. The gasbox may include an inlet side facing the output manifold and an outlet side opposite the inlet side. The gasbox may include an inner wall that defines a central fluid lumen. The inner wall may taper outward from the inlet side to the outlet side. The systems may include an annular spacer disposed below the gasbox. An inner diameter of the annular spacer may be greater than a largest inner diameter of the central fluid lumen. The systems may include a faceplate disposed beneath the annular spacer. The faceplate may define a plurality of apertures extending through a thickness of the faceplate.

公开(公告)号：US20220199373A1

公开(公告)日：2022-06-23

申请号：US17127201

申请日：2020-12-18

Applicant: Applied Materials, Inc.

Inventor： Venkata Sharat Chandra Parimi ,  Zubin Huang ,  Manjunath Veerappa Chobari Patil ,  Nitin Pathak ,  Yi Yang ,  Badri N. Ramamurthi ,  Truong Van Nguyen ,  Rui Cheng ,  Diwakar Kedlaya

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/458 ,  C23C16/44

Abstract: Exemplary semiconductor processing chambers include a chamber body defining a processing region. The chambers may include a substrate support disposed within the processing region. The substrate support may have an upper surface that defines a recessed substrate seat. The chambers may include a shadow ring disposed above the substrate seat and the upper surface. The shadow ring may extend about a peripheral edge of the substrate seat. The chambers may include bevel purge openings defined within the substrate support proximate the peripheral edge. A bottom surface of the shadow ring may be spaced apart from a top surface of the upper surface to form a purge gas flow path that extends from the bevel purge openings along the shadow ring. A space formed between the shadow ring and the substrate seat may define a process gas flow path. The gas flow paths may be in fluid communication with one another.

公开(公告)号：US20210032747A1

公开(公告)日：2021-02-04

申请号：US16936110

申请日：2020-07-22

Applicant: Applied Materials, Inc.

Inventor： Nitin Pathak ,  Yuxing Zhang ,  Tuan A. Nguyen ,  Kalyanjit Ghosh ,  Amit Bansal ,  Juan C. Rocha

IPC: C23C16/44 ,  H01J37/32 ,  C23C16/52

Abstract: A processing chamber may include a gas distribution member, a substrate support, and a pumping liner. The gas distribution member and the substrate support may at least in part define a processing volume. The pumping liner may define an internal volume in fluid communication with the processing volume via a plurality of apertures of the pumping liner circumferentially disposed about the processing volume. The processing chamber may further include a flow control mechanism operable to direct fluid flow from the internal volume of the pumping liner into the processing volume via a subset of the plurality of apertures of the pumping liner during fluid distribution into the processing volume from the gas distribution member.

公开(公告)号：US12183553B2

公开(公告)日：2024-12-31

申请号：US16891626

申请日：2020-06-03

Applicant: Applied Materials, Inc.

Inventor： Nitin Pathak ,  Kartik Shah ,  Amit Kumar Bansal ,  Tuan Anh Nguyen ,  Juan Carlos Rocha ,  David Blahnik

IPC: H01J37/32

Abstract: The present disclosure generally relates to an apparatus for improving azimuthal uniformity of a pressure profile of a processing gas. In one example, a processing chamber includes a lid, sidewalls, and a substrate support defining a processing volume. A bottom bowl, a chamber base, and a wall define a purge volume. The purge volume is disposed beneath the processing volume. The bottom bowl includes a first surface having a first equalizer hole. A passage couples the processing volume to the purge volume via the first equalizer hole and an inlet. The passage is positioned above the first equalizer hole. The chamber base has a purge port coupleable to a purge gas line for supplying a purge gas to the purge volume. A baffle is disposed in the purge volume at a height above the purge port, and is configured to deflect a trajectory of the purge gas.