公开(公告)号：US20200126996A1

公开(公告)日：2020-04-23

申请号：US16164236

申请日：2018-10-18

Applicant: Applied Materials, Inc.

Inventor： Priyadarshi Panda ,  Jianxin Lei ,  Wenting Hou ,  Mihaela Baiseanu ,  Ning Li ,  Sanjay Natarajan ,  Gill Yong Lee ,  In Seok Hwang ,  Nobuyuki Sasaki ,  Sung-Kwan Kang

IPC: H01L27/108 ,  H01L21/033 ,  H01L21/3213

Abstract: Memory devices and methods of forming memory devices are described. The memory devices comprise a substrate with at least one film stack. The film stack comprises a polysilicon layer on the substrate; a bit line metal layer on the polysilicon layer; a cap layer on the bit line metal layer; and a hardmask on the cap layer. The memory device of some embodiments includes an optional barrier metal layer on the polysilicon layer and the bit line metal layer is on the barrier metal layer. Methods of forming electronic devices are described where one or more patterns are transferred through the films of the film stack to provide the bit line of a memory device.