公开(公告)号：US11631680B2

公开(公告)日：2023-04-18

申请号：US17096099

申请日：2020-11-12

Applicant: Applied Materials, Inc.

Inventor： Priyadarshi Panda ,  In Seok Hwang

IPC: H01L27/108 ,  H01L21/768 ,  C23C28/00 ,  H01L21/285 ,  H01L21/02

Abstract: A process of smoothing a top surface of a bit line metal of a memory structure to decrease resistance of a bit line stack. The process includes depositing titanium layer of approximately 30 angstroms to 50 angstroms on polysilicon layer on a substrate, depositing first titanium nitride layer of approximately 15 angstroms to approximately 40 angstroms on titanium layer, annealing substrate at a temperature of approximately 700 degrees Celsius to approximately 850 degrees Celsius, depositing second titanium nitride layer of approximately 15 angstroms to approximately 40 angstroms on first titanium nitride layer after annealing, depositing a bit line metal layer of ruthenium on second titanium nitride layer, annealing bit line metal layer at temperature of approximately 550 degrees Celsius to approximately 650 degrees Celsius, and soaking bit line metal layer in hydrogen-based ambient for approximately 3 minutes to approximately 6 minutes during annealing.

公开(公告)号：US20240331999A1

公开(公告)日：2024-10-03

申请号：US18442681

申请日：2024-02-15

Applicant: Applied Materials, Inc.

Inventor： Ying-Bing Jiang ,  Avgerinos V. Gelatos ,  Joung Joo Lee ,  Bencherki Mebarki ,  Xianmin Tang ,  In Seok Hwang ,  Zhijun Chen

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0206 ,  H01L21/31111

Abstract: Exemplary semiconductor processing methods may include providing a substrate to a processing region of a semiconductor processing chamber. The substrate may include an alternating stack of materials. A feature may extend through the alternating stack of materials. One material of the alternating stack of materials may include a silicon-containing material. A native oxide material may be disposed on at least a portion of exposed surfaces of the silicon-containing material. The methods may include performing a pre-clean treatment on the substrate. The methods may include providing a fluorine-containing precursor to the processing region. The methods may include contacting the substrate with the fluorine-containing precursor, wherein the contacting removes native oxide from the silicon-containing material.

公开(公告)号：US11776980B2

公开(公告)日：2023-10-03

申请号：US16819023

申请日：2020-03-13

Applicant: Applied Materials, Inc.

Inventor： Luping Li ,  Jacqueline S. Wrench ,  Wen Ting Chen ,  Yixiong Yang ,  In Seok Hwang ,  Shih Chung Chen ,  Srinivas Gandikota

IPC: H01L27/146 ,  C23C16/20 ,  C23C16/14 ,  C23C16/455 ,  H01L21/67

CPC classification number: H01L27/1463 ,  C23C16/14 ,  C23C16/20 ,  C23C16/45553 ,  H01L27/14629 ,  H01L27/14685 ,  H01L21/67167

Abstract: Methods and apparatus for forming reflector films are described A liner is formed on a substrate surface followed by formation of the reflector layer so that there is no oxygen exposure between liner and reflector layer formation. In some embodiments, a high aspect ratio structure is filled with a reflector material by partially filling the structure with the reflector material while growth is inhibited at a top portion of the structure, reactivating the top portion of the substrate and then filling the structure with the reflector material.

公开(公告)号：US20200235104A1

公开(公告)日：2020-07-23

申请号：US16839392

申请日：2020-04-03

Applicant: Applied Materials, Inc.

Inventor： Priyadarshi Panda ,  Jianxin Lei ,  Wenting Hou ,  Mihaela Balseanu ,  Ning Li ,  Sanjay Natarajan ,  Gill Yong Lee ,  In Seok Hwang ,  Nobuyuki Sasaki ,  Sung-Kwan Kang

IPC: H01L27/108 ,  H01L21/3213 ,  H01L21/033

Abstract: Memory devices and methods of forming memory devices are described. The memory devices comprise a substrate with at least one film stack. The film stack comprises a polysilicon layer on the substrate; a bit line metal layer on the polysilicon layer; a cap layer on the bit line metal layer; and a hardmask on the cap layer. The memory device of some embodiments includes an optional barrier metal layer on the polysilicon layer and the bit line metal layer is on the barrier metal layer. Methods of forming electronic devices are described where one or more patterns are transferred through the films of the film stack to provide the bit line of a memory device.

公开(公告)号：US20210288086A1

公开(公告)日：2021-09-16

申请号：US16819023

申请日：2020-03-13

Applicant: Applied Materials, Inc.

Inventor： Luping Li ,  Jacqueline S. Wrench ,  Wen Ting Chen ,  Yixiong Yang ,  In Seok Hwang ,  Shih Chung Chen ,  Srinivas Gandikota

IPC: H01L27/146 ,  C23C16/455 ,  C23C16/20 ,  C23C16/14

Abstract: Methods and apparatus for forming reflector films are described A liner is formed on a substrate surface followed by formation of the reflector layer so that there is no oxygen exposure between liner and reflector layer formation. In some embodiments, a high aspect ratio structure is filled with a reflector material by partially filling the structure with the reflector material while growth is inhibited at a top portion of the structure, reactivating the top portion of the substrate and then filling the structure with the reflector material.

公开(公告)号：US10903112B2

公开(公告)日：2021-01-26

申请号：US16690620

申请日：2019-11-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Priyadarshi Panda ,  Jianxin Lei ,  Sanjay Natarajan ,  In Seok Hwang ,  Nobuyuki Sasaki

IPC: H01L21/768 ,  H01L21/285 ,  H01L21/02

Abstract: A process of smoothing a top surface of a bit line metal of a memory structure decreases resistance of a bit line stack. The process includes depositing a titanium layer of approximately 30 angstroms to 50 angstroms on a polysilicon layer on a substrate, depositing a first titanium nitride layer of approximately 15 angstroms to approximately 40 angstroms on the titanium layer, annealing the substrate at a temperature of approximately 700 degrees Celsius to approximately 850 degrees Celsius, depositing a second titanium nitride layer of approximately 15 angstroms to approximately 40 angstroms on the first titanium nitride layer after annealing, and depositing a bit line metal layer of ruthenium on the second titanium nitride layer.

公开(公告)号：US10700072B2

公开(公告)日：2020-06-30

申请号：US16164236

申请日：2018-10-18

Applicant: Applied Materials, Inc.

Inventor： Priyadarshi Panda ,  Jianxin Lei ,  Wenting Hou ,  Mihaela Balseanu ,  Ning Li ,  Sanjay Natarajan ,  Gill Yong Lee ,  In Seok Hwang ,  Nobuyuki Sasaki ,  Sung-Kwan Kang

IPC: H01L27/108 ,  H01L21/3213 ,  H01L21/033

Abstract: Memory devices and methods of forming memory devices are described. The memory devices comprise a substrate with at least one film stack. The film stack comprises a polysilicon layer on the substrate; a bit line metal layer on the polysilicon layer; a cap layer on the bit line metal layer; and a hardmask on the cap layer. The memory device of some embodiments includes an optional barrier metal layer on the polysilicon layer and the bit line metal layer is on the barrier metal layer. Methods of forming electronic devices are described where one or more patterns are transferred through the films of the film stack to provide the bit line of a memory device.

公开(公告)号：US20200126996A1

公开(公告)日：2020-04-23

申请号：US16164236

申请日：2018-10-18

Applicant: Applied Materials, Inc.

Inventor： Priyadarshi Panda ,  Jianxin Lei ,  Wenting Hou ,  Mihaela Baiseanu ,  Ning Li ,  Sanjay Natarajan ,  Gill Yong Lee ,  In Seok Hwang ,  Nobuyuki Sasaki ,  Sung-Kwan Kang

IPC: H01L27/108 ,  H01L21/033 ,  H01L21/3213

Abstract: Memory devices and methods of forming memory devices are described. The memory devices comprise a substrate with at least one film stack. The film stack comprises a polysilicon layer on the substrate; a bit line metal layer on the polysilicon layer; a cap layer on the bit line metal layer; and a hardmask on the cap layer. The memory device of some embodiments includes an optional barrier metal layer on the polysilicon layer and the bit line metal layer is on the barrier metal layer. Methods of forming electronic devices are described where one or more patterns are transferred through the films of the film stack to provide the bit line of a memory device.