公开(公告)号：US20180318758A1

公开(公告)日：2018-11-08

申请号：US16030337

申请日：2018-07-09

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Monique MCINTOSH ,  Colin John DICKINSON ,  Paul E. FISHER ,  Yutaka TANAKA ,  Zheng YUAN

IPC: B01D53/32 ,  B01J19/08 ,  B01D53/64 ,  H01J37/32 ,  B01D53/70 ,  B01D53/76 ,  B01D53/54

CPC classification number: B01D53/32 ,  B01D53/54 ,  B01D53/64 ,  B01D53/70 ,  B01D53/76 ,  B01D2251/00 ,  B01D2251/10 ,  B01D2251/102 ,  B01D2251/104 ,  B01D2251/108 ,  B01D2251/20 ,  B01D2251/202 ,  B01D2251/204 ,  B01D2251/2062 ,  B01D2251/208 ,  B01D2251/502 ,  B01D2252/103 ,  B01D2257/55 ,  B01D2257/553 ,  B01D2257/556 ,  B01D2257/60 ,  B01D2257/7025 ,  B01D2257/93 ,  B01D2258/0216 ,  B01D2259/818 ,  B01J19/088 ,  B01J2219/0815 ,  B01J2219/0875 ,  B01J2219/0894 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32669 ,  H01J2237/002 ,  H01J2237/335 ,  Y02C20/20 ,  Y02C20/30

Abstract: A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.

公开(公告)号：US20190022577A9

公开(公告)日：2019-01-24

申请号：US15486938

申请日：2017-04-13

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Monique MCINTOSH ,  Colin John DICKINSON ,  Paul E. FISHER ,  Yutaka TANAKA ,  Zheng YUAN

IPC: B01D53/32 ,  B01D53/64 ,  B01D53/70 ,  B01D53/54 ,  B01D53/76 ,  H01J37/32 ,  B01J19/08

CPC classification number: B01D53/32 ,  B01D53/54 ,  B01D53/64 ,  B01D53/70 ,  B01D53/76 ,  B01D2251/00 ,  B01D2251/10 ,  B01D2251/102 ,  B01D2251/104 ,  B01D2251/108 ,  B01D2251/20 ,  B01D2251/202 ,  B01D2251/204 ,  B01D2251/2062 ,  B01D2251/208 ,  B01D2251/502 ,  B01D2252/103 ,  B01D2257/55 ,  B01D2257/553 ,  B01D2257/556 ,  B01D2257/60 ,  B01D2257/7025 ,  B01D2257/93 ,  B01D2258/0216 ,  B01D2259/818 ,  B01J19/088 ,  B01J2219/0815 ,  B01J2219/0875 ,  B01J2219/0894 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32669 ,  H01J2237/002 ,  H01J2237/335 ,  Y02C20/20 ,  Y02C20/30

Abstract: A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.

公开(公告)号：US20150251133A1

公开(公告)日：2015-09-10

申请号：US14638871

申请日：2015-03-04

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Monique MCINTOSH ,  Colin John DICKINSON ,  Paul E. FISHER ,  Yutaka TANAKA ,  Zheng YUAN

IPC: B01D53/32 ,  B01D53/64 ,  B01J19/08 ,  B01D53/46

CPC classification number: B01D53/32 ,  B01D53/54 ,  B01D53/64 ,  B01D53/70 ,  B01D53/76 ,  B01D2251/00 ,  B01D2251/10 ,  B01D2251/102 ,  B01D2251/104 ,  B01D2251/108 ,  B01D2251/20 ,  B01D2251/202 ,  B01D2251/204 ,  B01D2251/2062 ,  B01D2251/208 ,  B01D2251/502 ,  B01D2252/103 ,  B01D2257/55 ,  B01D2257/553 ,  B01D2257/556 ,  B01D2257/60 ,  B01D2257/7025 ,  B01D2257/93 ,  B01D2258/0216 ,  B01D2259/818 ,  B01J19/088 ,  B01J2219/0815 ,  B01J2219/0875 ,  B01J2219/0894 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32669 ,  H01J2237/002 ,  H01J2237/335 ,  Y02C20/20 ,  Y02C20/30

Abstract: A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.

Abstract translation: 描述了用于从处理室中减少含有污染物的化合物的等离子体消除过程。 等离子体消除过程采用来自诸如沉积室的处理室的气态前级流出物，并使排出物在放置在前级管路中的等离子体室内反应。 血浆将流出物中的化合物解离，将流出物转化为更良性的化合物。 减轻试剂可能有助于减轻化合物。 减排过程可能是挥发或冷凝减排过程。 代表性的挥发减压试剂包括例如CH 4，H 2 O，H 2，NF 3，SF 6，F 2，HCl，HF，Cl 2和HBr。 代表性的减压剂包括例如H 2，H 2 O，O 2，N 2，O 3，CO，CO 2，NH 3，N 2 O，CH 4及其组合。

公开(公告)号：US20170216767A1

公开(公告)日：2017-08-03

申请号：US15486938

申请日：2017-04-13

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Monique MCINTOSH ,  Colin John DICKINSON ,  Paul E. FISHER ,  Yutaka TANAKA ,  Zheng YUAN

IPC: B01D53/32 ,  B01D53/70 ,  B01J19/08 ,  B01D53/76 ,  H01J37/32 ,  B01D53/64 ,  B01D53/54

CPC classification number: B01D53/32 ,  B01D53/54 ,  B01D53/64 ,  B01D53/70 ,  B01D53/76 ,  B01D2251/00 ,  B01D2251/10 ,  B01D2251/102 ,  B01D2251/104 ,  B01D2251/108 ,  B01D2251/20 ,  B01D2251/202 ,  B01D2251/204 ,  B01D2251/2062 ,  B01D2251/208 ,  B01D2251/502 ,  B01D2252/103 ,  B01D2257/55 ,  B01D2257/553 ,  B01D2257/556 ,  B01D2257/60 ,  B01D2257/7025 ,  B01D2257/93 ,  B01D2258/0216 ,  B01D2259/818 ,  B01J19/088 ,  B01J2219/0815 ,  B01J2219/0875 ,  B01J2219/0894 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32669 ,  H01J2237/002 ,  H01J2237/335 ,  Y02C20/20 ,  Y02C20/30

Abstract: A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.

公开(公告)号：US20160089630A1

公开(公告)日：2016-03-31

申请号：US14838408

申请日：2015-08-28

Applicant: Applied Materials, Inc.

Inventor： Colin John DICKINSON ,  Dustin W. HO ,  Monique MCINTOSH

IPC: B01D53/68 ,  B01D53/77

Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a foreline having a first end configured to couple to an exhaust port of a vacuum processing chamber, and an injection port is formed in the foreline. The abatement system further includes a scrubber coupled to a second end of the foreline. There is no effluent burner or plasma source interfaced with the foreline between the first end and the scrubber. Low temperature steam is injected into the foreline through the injection port to abate the PFCs flowing out of the vacuum processing chamber.

Abstract translation: 本文公开的实施方案包括减轻半导体工艺中产生的化合物的减排系统。 减排系统包括前排，其具有被配置为联接到真空处理室的排气口的第一端，并且在前级管线中形成注入口。 减排系统还包括耦合到前级管线的第二端的洗涤器。 在第一端和洗涤器之间没有与前级管线连接的流出燃烧器或等离子体源。 低温蒸汽通过注入口注入前级管线，以减轻从真空处理室流出的PFCs。