公开(公告)号：US20160376710A1

公开(公告)日：2016-12-29

申请号：US15187838

申请日：2016-06-21

Applicant: Applied Materials, Inc.

Inventor： Dustin W. HO ,  Michael S. COX ,  Zheng YUAN

IPC: C23C22/82 ,  C23C16/02

CPC classification number: C23C16/0245 ,  C23C16/4412

Abstract: Embodiments disclosed herein generally relate to plasma abatement processes and apparatuses. A plasma abatement process takes effluent from a foreline of a processing chamber, such as an implant chamber, and reacts the effluent with a reagent. The effluent contains a pyrophoric byproduct. A plasma generator placed within the foreline path may ionize the effluent and the reagent to facilitate a reaction between the effluent and the reagent. The ionized species react to form compounds which remain in a gaseous phase at conditions within the exhaust stream path. In another embodiment, the ionized species may react to form compounds which condense out of the gaseous phase. The condensed particulate matter is then removed from the effluent by a trap. The apparatuses may include an implant chamber, a plasma generator, one or more pumps, and a scrubber.

Abstract translation: 本文公开的实施方案一般涉及等离子体消除处理和装置。 等离子体消除过程从处理室的前级管线（例如植入室）中取出流出物，并将流出物与试剂反应。 流出物含有自燃副产物。 放置在前级管路内的等离子体发生器可使流出物和试剂离子化，以促进流出物与试剂之间的反应。 离子化物质在废气流路径内的条件下反应形成残留在气相中的化合物。 在另一个实施方案中，电离物质可以反应以形成从气相中冷凝的化合物。 然后通过陷阱将浓缩的颗粒物质从流出物中除去。 该装置可以包括植入室，等离子体发生器，一个或多个泵和洗涤器。

公开(公告)号：US20170301524A1

公开(公告)日：2017-10-19

申请号：US15487324

申请日：2017-04-13

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Brian T. WEST ,  Roger M. JOHNSON ,  Yan ROZENZON ,  Dinkesh SOMANNA ,  Dustin W. HO

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32844 ,  H01J2237/002 ,  H01J2237/18 ,  H01J2237/31701 ,  H01L21/67069 ,  Y02C20/30

Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes an exhaust cooling apparatus located downstream of a plasma source. The exhaust cooling apparatus includes at least one cooling plate a device for introducing turbulence to the exhaust flowing within the exhaust cooling apparatus. The device may be a plurality of fins, a cylinder with a curved top portion, or a diffuser with angled blades. The turbulent flow of the exhaust within the exhaust cooling apparatus causes particles to drop out of the exhaust, minimizing particles forming in equipment downstream of the exhaust cooling apparatus.

公开(公告)号：US20180221816A1

公开(公告)日：2018-08-09

申请号：US15887834

申请日：2018-02-02

Applicant: Applied Materials, Inc.

Inventor： Joseph A. VAN GOMPEL ,  Dustin W. HO ,  Zheng YUAN ,  James L'HEUREUX ,  Ryan T. DOWNEY

IPC: B01D53/56 ,  B01D53/76 ,  B01D53/34 ,  H01L21/67 ,  G05D16/20

CPC classification number: B01D53/56 ,  B01D53/323 ,  B01D53/346 ,  B01D53/76 ,  B01D2251/202 ,  B01D2257/402 ,  B01D2258/0216 ,  C10G70/00 ,  G05D16/2066 ,  H01L21/67017 ,  Y02C20/10

Abstract: Embodiments of the present disclosure generally relate techniques for abating N2O gas present in the effluent of semiconductor manufacturing processes. In one embodiment, a method includes injecting hydrogen gas or ammonia gas into a plasma source, and an effluent containing N2O gas and the hydrogen or ammonia gas are energized and reacted to form an abated material. By using the hydrogen gas or the ammonia gas, the destruction and removal efficiency (DRE) of the N2O gas is at least 50 percent while the concentration of nitric oxide (NO) and/or nitrogen dioxide (NO2) in the abated material is substantially reduced, such as at most 5000 parts per million (ppm) by volume.

公开(公告)号：US20160089630A1

公开(公告)日：2016-03-31

申请号：US14838408

申请日：2015-08-28

Applicant: Applied Materials, Inc.

Inventor： Colin John DICKINSON ,  Dustin W. HO ,  Monique MCINTOSH

IPC: B01D53/68 ,  B01D53/77

Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a foreline having a first end configured to couple to an exhaust port of a vacuum processing chamber, and an injection port is formed in the foreline. The abatement system further includes a scrubber coupled to a second end of the foreline. There is no effluent burner or plasma source interfaced with the foreline between the first end and the scrubber. Low temperature steam is injected into the foreline through the injection port to abate the PFCs flowing out of the vacuum processing chamber.

Abstract translation: 本文公开的实施方案包括减轻半导体工艺中产生的化合物的减排系统。 减排系统包括前排，其具有被配置为联接到真空处理室的排气口的第一端，并且在前级管线中形成注入口。 减排系统还包括耦合到前级管线的第二端的洗涤器。 在第一端和洗涤器之间没有与前级管线连接的流出燃烧器或等离子体源。 低温蒸汽通过注入口注入前级管线，以减轻从真空处理室流出的PFCs。