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公开(公告)号：US20180366307A1
公开(公告)日：2018-12-20
申请号：US16110803
申请日：2018-08-23
Applicant: Applied Materials, Inc.
Inventor： Colin John DICKINSON
Abstract: Implementations of the present disclosure relate to systems and techniques for abating F-gases present in the effluent of semiconductor manufacturing processes. In one implementation, a water and oxygen delivery system for a plasma abatement system is provided. The water and oxygen delivery system comprises a housing that includes a floor and a plurality of sidewalls that define an enclosed region. The water and oxygen delivery system further comprises a cylindrical water tank positioned on the floor, wherein a longitudinal axis of the cylindrical water tank is parallel to a plane defined by the floor and a length of the water tank is 1.5 times or greater than the diameter of the cylindrical water tank. The water and oxygen delivery system further comprises a flow control system positioned within the housing above the cylindrical water tank.
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公开(公告)号：US20150255251A1
公开(公告)日：2015-09-10
申请号：US14199974
申请日：2014-03-06
Applicant: Applied Materials, Inc.
Inventor： Michael S. COX , Rongping WANG , Brian T. WEST , Roger M. JOHNSON , Colin John DICKINSON
CPC classification number: H01J37/3266 , H01J37/165 , H01J37/32091 , H01J37/321 , H01J37/32541 , H01J37/32568 , H01J37/32596 , H01J37/32651 , H01J37/32669 , H01J37/32844 , H01J2237/002 , H01J2237/327 , H01J2237/332 , H01J2237/334 , Y02C20/30
Abstract: Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.
Abstract translation: 本文公开的实施例包括用于减轻在半导体工艺中产生的化合物的等离子体源。 等离子体源具有平行于第一板的第一板和第二板。 电极设置在第一和第二板之间，外壁设置在围绕圆柱形电极的第一和第二板之间。 等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。 由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。 在该配置中，产生致密等离子体。
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公开(公告)号：US20180318758A1
公开(公告)日：2018-11-08
申请号：US16030337
申请日：2018-07-09
Applicant: Applied Materials, Inc.
Inventor： Michael S. COX , Monique MCINTOSH , Colin John DICKINSON , Paul E. FISHER , Yutaka TANAKA , Zheng YUAN
CPC classification number: B01D53/32 , B01D53/54 , B01D53/64 , B01D53/70 , B01D53/76 , B01D2251/00 , B01D2251/10 , B01D2251/102 , B01D2251/104 , B01D2251/108 , B01D2251/20 , B01D2251/202 , B01D2251/204 , B01D2251/2062 , B01D2251/208 , B01D2251/502 , B01D2252/103 , B01D2257/55 , B01D2257/553 , B01D2257/556 , B01D2257/60 , B01D2257/7025 , B01D2257/93 , B01D2258/0216 , B01D2259/818 , B01J19/088 , B01J2219/0815 , B01J2219/0875 , B01J2219/0894 , H01J37/32091 , H01J37/321 , H01J37/3244 , H01J37/32522 , H01J37/32669 , H01J2237/002 , H01J2237/335 , Y02C20/20 , Y02C20/30
Abstract: A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.
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公开(公告)号：US20180226234A1
公开(公告)日：2018-08-09
申请号：US15884028
申请日：2018-01-30
Applicant: Applied Materials, Inc.
Inventor： Colin John DICKINSON
CPC classification number: H01J37/32844 , B01D53/32 , B01D53/68 , B01D2251/102 , B01D2257/204 , B01D2257/2066 , B01D2258/0216 , B01D2259/818 , H01J37/32862 , H01J2237/3321 , H01J2237/334 , Y02C20/30
Abstract: Implementations of the present disclosure relate to systems and techniques for abating F-gases present in the effluent of semiconductor manufacturing processes. In one implementation, a water and oxygen delivery system for a plasma abatement system is provided. The water and oxygen delivery system comprises a housing that includes a floor and a plurality of sidewalls that define an enclosed region. The water and oxygen delivery system further comprises a cylindrical water tank positioned on the floor, wherein a longitudinal axis of the cylindrical water tank is parallel to a plane defined by the floor and a length of the water tank is 1.5 times or greater than the diameter of the cylindrical water tank. The water and oxygen delivery system further comprises a flow control system positioned within the housing above the cylindrical water tank.
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公开(公告)号：US20170173521A1
公开(公告)日：2017-06-22
申请号：US15449226
申请日：2017-03-03
Applicant: APPLIED MATERIALS, INC.
Inventor： Colin John DICKINSON , Mehran MOALEM , Daniel O. CLARK
Abstract: Methods and apparatus for treating an exhaust gas in a foreline of a substrate processing system are provided herein. In some embodiments, a method for treating an exhaust gas in an exhaust conduit of a substrate processing system includes: flowing an exhaust gas and a reagent gas into an exhaust conduit of a substrate processing system; injecting a non-reactive gas into the exhaust conduit to maintain a desired pressure in the exhaust conduit for conversion of the exhaust gas; and forming a plasma from the exhaust gas and reagent gas, subsequent to injecting the non-reactive gas, to convert the exhaust gas to abatable byproduct gases.
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Patent Agency Ranking
公开(公告)号：US20230290614A1
公开(公告)日：2023-09-14
申请号：US17690644
申请日：2022-03-09
Applicant: Applied Materials, Inc.
Inventor： Dinkesh HUDERI SOMANNA , Ala MORADIAN , Colin John DICKINSON , Manjunath SUBBANNA
CPC classification number: H01J37/32477 , C23C14/34 , H01J2237/332
Abstract: Embodiments of heat shield assemblies for a processing chamber are provided herein. In some embodiments, a heat shield assembly for a processing chamber includes: a first shield comprising a circular plate; a second shield coupled to the first shield and in a parallel configuration with the first shield, wherein the second shield has an outer diameter greater than an outer diameter of the first shield and the second shield includes a central opening having a diameter smaller than an outer diameter of the first shield; and a third shield coupled to and in a parallel configuration with the second shield, wherein an outer diameter of the third shield is greater than the diameter of the central opening of the second shield.
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公开(公告)号：US20170216767A1
公开(公告)日：2017-08-03
申请号：US15486938
申请日：2017-04-13
Applicant: Applied Materials, Inc.
Inventor： Michael S. COX , Monique MCINTOSH , Colin John DICKINSON , Paul E. FISHER , Yutaka TANAKA , Zheng YUAN
CPC classification number: B01D53/32 , B01D53/54 , B01D53/64 , B01D53/70 , B01D53/76 , B01D2251/00 , B01D2251/10 , B01D2251/102 , B01D2251/104 , B01D2251/108 , B01D2251/20 , B01D2251/202 , B01D2251/204 , B01D2251/2062 , B01D2251/208 , B01D2251/502 , B01D2252/103 , B01D2257/55 , B01D2257/553 , B01D2257/556 , B01D2257/60 , B01D2257/7025 , B01D2257/93 , B01D2258/0216 , B01D2259/818 , B01J19/088 , B01J2219/0815 , B01J2219/0875 , B01J2219/0894 , H01J37/32091 , H01J37/321 , H01J37/3244 , H01J37/32522 , H01J37/32669 , H01J2237/002 , H01J2237/335 , Y02C20/20 , Y02C20/30
Abstract: A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.
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8.发明申请PLASMA ABATEMENT USING WATER VAPOR IN CONJUNCTION WITH HYDROGEN OR HYDROGEN CONTAINING GASES 审中-公开使用水蒸气与含氢气体或氢气相连的等离子体消耗公开(公告)号：US20160166868A1
公开(公告)日：2016-06-16
申请号：US14944030
申请日：2015-11-17
Applicant: Applied Materials, Inc.
Inventor： Colin John DICKINSON
CPC classification number: H01J37/32844 , A62D3/19 , A62D2101/22 , A62D2101/26 , A62D2101/28 , H01J37/32834 , Y02C20/30 , Y02E60/366
Abstract: A plasma abatement process for abating effluent containing a PFC gas from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as an etch chamber, and reacts with the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the PFC gases and reacts them with a reagent, converting the effluent into compounds that are non-global warming and which may be easily removed by traditional facility water scrubbing technology. This disclosure explains methods to control the reagent hydrogen to oxygen ratio such that in addition to PFC destruction, the abated compounds have modified composition to enable extension of the maintenance interval for downstream supporting equipment.
Abstract translation: 描述了用于减轻来自处理室的含有PFC气体的流出物的等离子体消除过程。 等离子体消除过程使用来自处理室（例如蚀刻室）的气态前级流出物，并与放置在前级管路中的等离子体室内的流出物反应。 等离子体离解PFC气体并与试剂反应，将流出物转化成非全球变暖的化合物，并且可以通过传统的设备水洗技术容易地除去。 本公开说明了控制试剂氢与氧比的方法，使得除了PFC破坏之外，减排的化合物具有改进的组成，以能够延长下游配套设备的维护间隔。
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公开(公告)号：US20160089630A1
公开(公告)日：2016-03-31
申请号：US14838408
申请日：2015-08-28
Applicant: Applied Materials, Inc.
Inventor： Colin John DICKINSON , Dustin W. HO , Monique MCINTOSH
Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a foreline having a first end configured to couple to an exhaust port of a vacuum processing chamber, and an injection port is formed in the foreline. The abatement system further includes a scrubber coupled to a second end of the foreline. There is no effluent burner or plasma source interfaced with the foreline between the first end and the scrubber. Low temperature steam is injected into the foreline through the injection port to abate the PFCs flowing out of the vacuum processing chamber.
Abstract translation: 本文公开的实施方案包括减轻半导体工艺中产生的化合物的减排系统。 减排系统包括前排，其具有被配置为联接到真空处理室的排气口的第一端，并且在前级管线中形成注入口。 减排系统还包括耦合到前级管线的第二端的洗涤器。 在第一端和洗涤器之间没有与前级管线连接的流出燃烧器或等离子体源。 低温蒸汽通过注入口注入前级管线，以减轻从真空处理室流出的PFCs。
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公开(公告)号：US20250010431A1
公开(公告)日：2025-01-09
申请号：US18274991
申请日：2022-08-18
Applicant: Applied Materials, Inc.
Inventor： Jianjun HU , Peng LIU , Colin John DICKINSON , Quoc TRUONG , Jamie Stuart LEIGHTON , Gopalakrishna B. PRABHU , John Howard GIVENS
IPC: B24B57/02 , B24B37/005 , B24B37/04
Abstract: The present disclosure generally relates to methods and system used to collect and reuse polishing fluids used during a chemical mechanical polishing (CMP) process for the fabrication of electronic devices. More specifically, systems and methods provided herein include a polishing fluid collection system having a catch basin, a vacuum device, and a polishing fluid recycling module for recycling polishing fluid.
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