公开(公告)号：US11784033B2

公开(公告)日：2023-10-10

申请号：US17333732

申请日：2021-05-28

Applicant: Applied Materials, Inc.

Inventor： Mengxue Wu ,  Siew Kit Hoi ,  Jay Min Soh ,  Yue Cui ,  Chul Nyoung Lee ,  Palaniappan Chidambaram ,  Jiao Song

IPC: C23C14/35 ,  H01J3/34 ,  H01J37/34 ,  C23C14/54 ,  C23C14/34

CPC classification number: H01J37/3476 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/3455 ,  C23C14/351

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises applying a DC target voltage to a target disposed within a processing volume of a plasma processing chamber, rotating a magnet disposed above the target at a default speed to direct sputter material from the target toward a substrate support disposed within the processing volume, measuring in-situ DC voltage in the processing volume, the in-situ DC voltage different from the DC target voltage, determining if a measured in-situ DC voltage is greater than a preset value, if the measured in-situ DC voltage is less than or equal to the preset value, maintaining the magnet at the default speed, and if the measured in-situ DC voltage is greater than the preset value, rotating the magnet at a speed less than the default speed to decrease the in-situ DC voltage.

公开(公告)号：USD1053230S1

公开(公告)日：2024-12-03

申请号：US29839271

申请日：2022-05-19

Applicant: Applied Materials, Inc.

Designer： Siew Kit Hoi ,  Jay Min Soh ,  Mengxue Wu ,  Palaniappan Chidambaram