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    Techniques for determining and correcting for expected dose variation during implantation of photoresist-coated substrates
    2.
    发明授权
    Techniques for determining and correcting for expected dose variation during implantation of photoresist-coated substrates 有权

    公开(公告)号：US11264205B2

    公开(公告)日：2022-03-01

    申请号：US17093468

    申请日：2020-11-09

    Applicant: APPLIED Materials, Inc.

    Inventor： Eric Donald Wilson ,  George Gammel

    IPC: H01J37/00 ,  H01J37/317 ,  H01J37/256 ,  H01J37/244 ,  H01J37/304

    Abstract: A method, including using an implant recipe to perform an implant by scanning an ion beam along a first axis over a substrate, coated with a photoresist layer, while the substrate is scanned along a perpendicular axis; measuring an implant current (I) during the implant, using a first detector, positioned to a side of a substrate position; determining a value of a difference ratio (I−B)/(B), based upon the implant current, where B is current measured by the first detector, during a calibration at base pressure; determining a plurality of values of a current ratio (CR) for the plurality of instances, based upon the difference ratio, the current ratio being a ratio of the implant current to a current measured by a second detector, positioned over the substrate position, during the calibration; and adjusting scanning the ion beam, scanning of the substrate, or a combination thereof, based upon the current ratio.

    FAST BEAM CALIBRATION PROCEDURE FOR BEAMLINE ION IMPLANTER
    4.
    发明申请
    FAST BEAM CALIBRATION PROCEDURE FOR BEAMLINE ION IMPLANTER 有权

    公开(公告)号：US20230057995A1

    公开(公告)日：2023-02-23

    申请号：US17700048

    申请日：2022-03-21

    Applicant: Applied Materials, Inc.

    Inventor： George M. Gammel ,  Eric Donald Wilson

    IPC: H01J37/147

    Abstract: A method includes receiving a spot beam profile is received for a spot ion beam; receiving a linear scanned beam profile for the spot ion beam; generating a calculated calibration spot profile, based upon the spot beam profile and the linear scanned beam profile; and implementing an adjusted scanned profile for the spot ion beam, based upon the calculated calibration spot profile.

    Crucible design for liquid metal in an ion source
    5.
    发明授权
    Crucible design for liquid metal in an ion source 有权

    公开(公告)号：US11854760B2

    公开(公告)日：2023-12-26

    申请号：US17353171

    申请日：2021-06-21

    Applicant: Applied Materials, Inc.

    Inventor： Graham Wright ,  Eric Donald Wilson ,  Daniel Alvarado ,  Robert C. Lindberg ,  Jacob Mullin

    IPC: H01J27/02 ,  H01J27/14

    CPC classification number: H01J27/022 ,  H01J27/14

    Abstract: A crucible that exploits the observation that molten metal tends to flow toward the hottest regions is disclosed. The crucible includes an interior in which dopant material may be disposed. The crucible has a pathway leading from the interior toward an aperture, wherein the temperature is continuously increasing along the pathway. The aperture may be disposed in or near the interior of the arc chamber of an ion source. The liquid metal flows along the pathway toward the arc chamber, where it is vaporized and then ionized. By controlling the flow rate of the pathway, spillage may be reduced. In another embodiment, an inverted crucible is disclosed. The inverted crucible comprises a closed end in communication with the interior of the ion source, so that the closed end is the hottest region of the crucible. An opening is disposed on a different wall to allow vapor to exit the crucible.

    METHODS, MEDIUMS, AND SYSTEMS FOR IDENTIFYING TUNABLE DOMAINS FOR ION BEAM SHAPE MATCHING
    7.
    发明申请
    METHODS, MEDIUMS, AND SYSTEMS FOR IDENTIFYING TUNABLE DOMAINS FOR ION BEAM SHAPE MATCHING 有权

    公开(公告)号：US20230013095A1

    公开(公告)日：2023-01-19

    申请号：US17375488

    申请日：2021-07-14

    Applicant: Applied Materials, Inc.

    Inventor： Richard Allen Sprenkle ,  Richard White ,  Eric Donald Wilson ,  Shane Conley ,  Ana Samolov ,  Nilay A. Pradhan

    IPC: H01J3/12 ,  G05B19/4155 ,  G06N20/00

    Abstract: Techniques for adjusting the shape of an ion beam are described. Characteristics of a desired beam shape may be defined. The ion beam generator may include beam shaping elements associated with tunable parameters that can be set in combination with each other. A search space for the possible combinations is defined. A set of exploratory points in the search space are measured and used to interpolate a large number of interpolated points based on a regression model. Interpolated points that are associated with low confidence values may be measured. Based on the measured and interpolated points, clusters of tunable parameter combinations may be identified for evaluation. The clusters are evaluated for stability and sensitivity, and one of the clusters is selected based on the evaluation. The ion beam generator may be configured based on the selected cluster.

    Crucible Design For Liquid Metal In An Ion Source
    8.
    发明申请
    Crucible Design For Liquid Metal In An Ion Source 有权

    公开(公告)号：US20220406554A1

    公开(公告)日：2022-12-22

    申请号：US17353171

    申请日：2021-06-21

    Applicant: Applied Materials, Inc.

    Inventor： Graham Wright ,  Eric Donald Wilson ,  Daniel Alvarado ,  Robert C. Lindberg ,  Jacob Mullin

    IPC: H01J27/02 ,  H01J27/14

    Abstract: A crucible that exploits the observation that molten metal tends to flow toward the hottest regions is disclosed. The crucible includes an interior in which dopant material may be disposed. The crucible has a pathway leading from the interior toward an aperture, wherein the temperature is continuously increasing along the pathway. The aperture may be disposed in or near the interior of the arc chamber of an ion source. The liquid metal flows along the pathway toward the arc chamber, where it is vaporized and then ionized. By controlling the flow rate of the pathway, spillage may be reduced. In another embodiment, an inverted crucible is disclosed. The inverted crucible comprises a closed end in communication with the interior of the ion source, so that the closed end is the hottest region of the crucible. An opening is disposed on a different wall to allow vapor to exit the crucible.

    Extended Cathode And Repeller Life By Active Management Of Halogen Cycle
    9.
    发明申请
    Extended Cathode And Repeller Life By Active Management Of Halogen Cycle 有权

    公开(公告)号：US20220359147A1

    公开(公告)日：2022-11-10

    申请号：US17308732

    申请日：2021-05-05

    Applicant: Applied Materials, Inc.

    Inventor： Graham Wright ,  Daniel Alvarado ,  Eric Donald Wilson ,  Robert Lindberg

    IPC: H01J27/08 ,  H01J37/30 ,  H01J27/02 ,  H01J37/08

    Abstract: A system and method for extending the life of a cathode and repeller in an IHC ion source is disclosed. The system monitors the health of the cathode by operating using a known set of parameters and measuring the bias power used to generate the desired extracted beam current or the desired current from the arc voltage power supply. Based on the measured bias power, the system may determine whether the cathode is becoming too thin, and may take a corrective action. This corrective action may be to alert the operator; to operate the IHC ion source using a predetermined set of parameters; or to change the dilution used within the IHC source. By performing these actions, the life of the cathode may be more than doubled.

    TECHNIQUES FOR DETERMINING AND CORRECTING FOR EXPECTED DOSE VARIATION DURING IMPLANTATION OF PHOTORESIST-COATED SUBSTRATES
    10.
    发明申请
    TECHNIQUES FOR DETERMINING AND CORRECTING FOR EXPECTED DOSE VARIATION DURING IMPLANTATION OF PHOTORESIST-COATED SUBSTRATES 有权

    公开(公告)号：US20210175048A1

    公开(公告)日：2021-06-10

    申请号：US17093468

    申请日：2020-11-09

    Applicant: APPLIED Materials, Inc.

    Inventor： Eric Donald Wilson ,  George Gammel

    IPC: H01J37/317 ,  H01J37/256 ,  H01J37/244 ,  H01J37/304

    Abstract: A method, including using an implant recipe to perform an implant by scanning an ion beam along a first axis over a substrate, coated with a photoresist layer, while the substrate is scanned along a perpendicular axis; measuring an implant current (I) during the implant, using a first detector, positioned to a side of a substrate position; determining a value of a difference ratio (I−B)/(B), based upon the implant current, where B is current measured by the first detector, during a calibration at base pressure; determining a plurality of values of a current ratio (CR) for the plurality of instances, based upon the difference ratio, the current ratio being a ratio of the implant current to a current measured by a second detector, positioned over the substrate position, during the calibration; and adjusting scanning the ion beam, scanning of the substrate, or a combination thereof, based upon the current ratio.

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