公开(公告)号：US20170200585A1

公开(公告)日：2017-07-13

申请号：US15104461

申请日：2015-06-15

Applicant: Applied Materials, Inc.

Inventor： Rongping WANG ,  Ruizhe REN ,  Jon C. FARR ,  Chethan MANGALORE ,  Peter DEMONTE ,  Parthiban BALAKRISHNA

IPC: H01J37/32 ,  H01F27/28

CPC classification number: H01J37/3211 ,  H01F27/28 ,  H01J37/321 ,  H01J37/32651 ,  H01J2237/3341 ,  H01J2237/3344

Abstract: Embodiments of the present disclosure include a radial frequency plasma source having a split type inner coil assembly. In one embodiment, the split type inner coil assembly comprises two intertwining coils. In another embodiment, the split type inner coil assembly includes looped coils forming a dome.

公开(公告)号：US20220399205A1

公开(公告)日：2022-12-15

申请号：US17770019

申请日：2019-12-23

Applicant: Applied Materials, Inc.

Inventor： Zhigang WANG ,  Jiao YANG ,  Heng WANG ,  Alfredo GRANADOS ,  Jon C. FARR ,  Ruizhe REN

IPC: H01L21/311 ,  H01L21/3213 ,  H01L21/02

Abstract: An apparatus and method for etching a material layer with a cyclic etching and deposition process. The method for etching a material layer on a substrate includes: (a) etching at least a portion of a material layer (302) on a substrate (101) in an etch chamber (100) to form an open feature (360) having a bottom surface (312) and sidewalls in the material layer (302); (b) forming a protection layer (314) on the sidewalls and the bottom surface (312) of the open feature (360) from a protection layer (314) gas mixture comprising at least one carbon-fluorine containing gas; (c) selectively removing the protection layer (314) formed on the bottom surface (312) of the open feature (360) from a bottom surface (312) open gas mixture comprising the carbon-fluorine containing gas; and (d) continuingly etching the material layer (302) from the bottom surface (312) of the open feature (360) until a desired depth of the open feature (360) is reached.