公开(公告)号：US20140116470A1

公开(公告)日：2014-05-01

申请号：US14149526

申请日：2014-01-07

Applicant: Applied Materials, Inc.

Inventor： Jie SU ,  Lori D. WASHINGTON ,  Sandeep NIJHAWAN ,  Olga KRYLIOUK ,  Jacob GRAYSON ,  Sang Won KANG ,  Dong Hyung LEE ,  Hua CHUNG

IPC: C23C16/44

CPC classification number: C23C16/4405 ,  C23C16/4404 ,  C23C16/45574 ,  H01L21/67115

Abstract: A method and apparatus for removing deposition products from internal surfaces of a processing chamber, and for preventing or slowing growth of such deposition products. A halogen containing gas is provided to the chamber to etch away deposition products. A halogen scavenging gas is provided to the chamber to remove any residual halogen. The halogen scavenging gas is generally activated by exposure to electromagnetic energy, either inside the processing chamber by thermal energy, or in a remote chamber by electric field, UV, or microwave. A deposition precursor may be added to the halogen scavenging gas to form a deposition resistant film on the internal surfaces of the chamber. Additionally, or alternately, a deposition resistant film may be formed by sputtering a deposition resistant metal onto internal components of the processing chamber in a PVD process.

Abstract translation: 一种用于从处理室的内表面去除沉积产物并用于防止或减缓这种沉积产物的生长的方法和装置。 将含卤素气体提供到室以蚀刻掉沉积产物。 将卤素清除气体提供到室以除去任何残留的卤素。 卤素清除气体通常通过暴露于电磁能（通过热能在处理室内）或通过电场，UV或微波在远程室中而被激活。 可以将沉积前体添加到卤素清除气体中，以在室的内表面上形成耐沉积膜。 另外，或者也可以通过在PVD工艺中将耐沉积金属溅射到处理室的内部部件上来形成耐沉积膜。

公开(公告)号：US20170069463A1

公开(公告)日：2017-03-09

申请号：US15259401

申请日：2016-09-08

Applicant: Applied Materials, Inc.

Inventor： Sang Won KANG ,  Nicholas CELESTE ,  Dmitry LUBOMIRSKY ,  Peter HILLMAN ,  Douglas Brenton HAYDEN ,  Dongqing YANG

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/3244 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32724 ,  H01J37/32862

Abstract: Embodiments of the present disclosure generally provide improved methods for processing substrates with improved process stability, increased mean wafers between clean, and/or improved within wafer uniformity. One embodiment provides a method for seasoning one or more chamber components in a process chamber. The method includes placing a dummy substrate in the process chamber, flowing a processing gas mixture to the process chamber to react with the dummy substrate and generate a byproduct on the dummy substrate, and annealing the dummy substrate to sublimate the byproduct while at least one purge conduit of the process chamber is closed.

Abstract translation: 本公开的实施例通常提供用于处理具有改进的工艺稳定性的衬底的改进方法，在清洁之间增加平均晶片和/或在晶片均匀性内改善。 一个实施例提供了一种调节处理室中的一个或多个室部件的方法。 该方法包括在处理室中放置虚拟衬底，将处理气体混合物流动到处理室以与虚拟衬底反应并在虚设衬底上产生副产物，并对虚拟衬底退火以使副产物升华，同时至少一次吹扫 处理室的管道关闭。