Method and apparatus to overcome anomalies in copper seed layers and to tune for feature size and aspect ratio
    1.
    发明申请
    Method and apparatus to overcome anomalies in copper seed layers and to tune for feature size and aspect ratio 失效
    克服铜种子层异常的方法和装置,并调整特征尺寸和纵横比

    公开(公告)号:US20020011415A1

    公开(公告)日:2002-01-31

    申请号:US09853962

    申请日:2001-05-10

    摘要: A method and apparatus for electrochemically depositing a metal into a high aspect ratio structure on a substrate are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a first conductive material disposed thereon in a processing chamber containing an electrochemical bath, depositing a second conductive material on the first conductive material as the conductive material is contacted with the electrochemical bath by applying a plating bias to the substrate while immersing the substrate into the electrochemical bath, and depositing a third conductive material in situ on the second conductive material by an electrochemical deposition technique to fill the feature. The bias may include a charge density between about 20 mA*sec/cm2 and about 160 mA*sec/cm2. The electrochemical deposition technique may include a pulse modulation technique.

    摘要翻译: 提供了一种在基板上将金属电化学沉积成高纵横比结构的方法和装置。 在一个方面,提供了一种用于处理衬底的方法,包括在包含电化学浴的处理室中定位其上具有第一导电材料的衬底,当第一导电材料与第一导电材料接触时,将第二导电材料沉积在第一导电材料上 通过在将基板浸入电化学浴中的同时将衬底施加电镀偏压并通过电化学沉积技术在第二导电材料上原位沉积第三导电材料来填充该特征,从而进行电化学浴。 该偏压可以包括约20mA * sec / cm 2和约160mA * sec / cm 2之间的电荷密度。 电化学沉积技术可以包括脉冲调制技术。

    Small volume electroplating cell
    5.
    发明申请
    Small volume electroplating cell 审中-公开
    小体积电镀电池

    公开(公告)号:US20040104119A1

    公开(公告)日:2004-06-03

    申请号:US10308848

    申请日:2002-12-02

    IPC分类号: C25D005/00 C25D017/00

    CPC分类号: C25D5/04 C25D7/123

    摘要: A method and apparatus for plating a metal onto a substrate. The apparatus generally The apparatus generally includes a substrate support member configured to support a substrate during a plating process, a cathode clamp ring detachably positioned to circumscribe a perimeter of the substrate and a movable anode assembly disposed above the substrate, wherein the anode assembly is movable in a direction generally perpendicular the substrate. The apparatus generally further includes a fluid inlet formed through the anode assembly, the fluid inlet being configured to supply a plating solution to the processing area sufficient to electrically connect the anode assembly to the substrate. The method generally includes supplying a plating solution to a processing chamber, the processing chamber being defined by a movable anode assembly disposed above the substrate and a cathode clamp ring detachably positioned to circumscribe the perimeter of the substrate, wherein the plating solution is supplied at a rate sufficient to electrically connect the anode assembly to the substrate and plating a metal from the plating solution onto the substrate.

    摘要翻译: 一种用于将金属电镀到基底上的方法和装置。 该装置通常包括:基板支撑构件,其被配置为在电镀过程期间支撑基板;阴极夹环,其可拆卸地定位成围绕基板的周边;以及可移动阳极组件,其设置在所述基板上方,其中所述阳极组件可移动 在大致垂直于衬底的方向上。 该设备通常还包括通过阳极组件形成的流体入口,流体入口被配置为向处理区域提供足以将阳极组件电连接到衬底的电镀溶液。 该方法通常包括向处理室供应电镀液,处理室由设置在基板上方的可移动阳极组件和可拆卸地定位成围绕衬底的周边的阴极夹环限定,其中电镀液以 足以将阳极组件电连接到衬底并将金属从电镀溶液镀覆到衬底上。