公开(公告)号：US20230116437A1

公开(公告)日：2023-04-13

申请号：US18080884

申请日：2022-12-14

Applicant: Applied Materials, Inc.

Inventor： Laksheswar Kalita ,  Son Nguyen ,  Dmitry Lubomirsky ,  Kenneth D. Schatz

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

Abstract: Systems and methods may be used to produce coated components. Exemplary semiconductor chamber components may include an aluminum alloy comprising nickel and may be characterized by a surface. The surface may include a corrosion resistant coating. The corrosion resistant coating may include a conformal layer and a non-metal layer. The conformal layer may extend about the semiconductor chamber component. The non-metal oxide layer may extend over a surface of the conformal layer. The non-metal oxide layer may be characterized by an amorphous microstructure having a hardness of from about 300 HV to about 10,000 HV. The non-metal oxide layer may also be characterized by an sp2 to sp3 hybridization ratio of from about 0.01 to about 0.5 and a hydrogen content of from about 1 wt. % to about 35 wt. %.

公开(公告)号：US11557464B2

公开(公告)日：2023-01-17

申请号：US16891803

申请日：2020-06-03

Applicant: Applied Materials, Inc.

Inventor： Laksheswar Kalita ,  Son Nguyen ,  Dmitry Lubomirsky ,  Kenneth D. Schatz

IPC: H01L21/67 ,  H01L21/3065 ,  H01J37/32 ,  C23C16/40

Abstract: Systems and methods may be used to produce coated components. Exemplary semiconductor chamber components may include an aluminum alloy comprising nickel and may be characterized by a surface. The surface may include a corrosion resistant coating. The corrosion resistant coating may include a conformal layer and a non-metal layer. The conformal layer may extend about the semiconductor chamber component. The non-metal oxide layer may extend over a surface of the conformal layer. The non-metal oxide layer may be characterized by an amorphous microstructure having a hardness of from about 300 HV to about 10,000 HV. The non-metal oxide layer may also be characterized by an sp2 to sp3 hybridization ratio of from about 0.01 to about 0.5 and a hydrogen content of from about 1 wt. % to about 35 wt. %.

公开(公告)号：US20160204009A1

公开(公告)日：2016-07-14

申请号：US14593873

申请日：2015-01-09

Applicant: Applied Materials, Inc.

Inventor： Son Nguyen ,  Dmitry Lubomirsky ,  Chungman Kim ,  Kirby H. Floyd

IPC: H01L21/67

CPC classification number: H01L21/67109 ,  H01L21/67248

Abstract: A semiconductor processing system may include a substrate pedestal. The system may also include at least one fluid channel having a delivery portion configured to deliver a temperature controlled fluid to the substrate pedestal, and having a return portion configured to return the temperature controlled fluid from the substrate pedestal. The system may also include a heater coupled with the delivery portion of the at least one fluid channel. The system may also include a temperature measurement device coupled with the return portion of the at least one fluid channel, and the temperature measurement device may be communicatively coupled with the heater.

Abstract translation: 半导体处理系统可以包括衬底基座。 该系统还可以包括至少一个流体通道，该流体通道具有配置成将温度受控流体输送到基板基座的输送部分，并且具有被配置为使得温度受控流体从基板基座返回的返回部分。 该系统还可以包括与至少一个流体通道的输送部分联接的加热器。 该系统还可以包括与至少一个流体通道的返回部分耦合的温度测量装置，并且温度测量装置可以与加热器通信地耦合。

公开(公告)号：US11257693B2

公开(公告)日：2022-02-22

申请号：US14593873

申请日：2015-01-09

Applicant: Applied Materials, Inc.

Inventor： Son Nguyen ,  Dmitry Lubomirsky ,  Chungman Kim ,  Kirby H. Floyd

IPC: H01L21/00 ,  H01L21/67

Abstract: A semiconductor processing system may include a substrate pedestal. The system may also include at least one fluid channel having a delivery portion configured to deliver a temperature controlled fluid to the substrate pedestal, and having a return portion configured to return the temperature controlled fluid from the substrate pedestal. The system may also include a heater coupled with the delivery portion of the at least one fluid channel. The system may also include a temperature measurement device coupled with the return portion of the at least one fluid channel, and the temperature measurement device may be communicatively coupled with the heater.