公开(公告)号：US20240203695A1

公开(公告)日：2024-06-20

申请号：US18083372

申请日：2022-12-16

Applicant: Applied Materials, Inc.

Inventor： Toan Tran ,  Yen-Kun Wang ,  Reyn Wakabayashi ,  Steve Babayan ,  Wayne Wan

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01J37/32449 ,  H01J37/32972 ,  H01L21/3065 ,  H01L21/31116 ,  H01J2237/3346

Abstract: A system including a chamber enclosing a processing region, a substrate support within the chamber and configured to retain a substrate in the processing region, a gas distribution manifold coupled to the chamber to introduce first and a second etching gases from the gas distribution manifold using first and second inlets, a first gas distribution channel coupled configured to selectively switch between directing the first etching gas along a first gas flow path towards the processing region, and directing the first etching gas towards a vent, and a second gas distribution channel configured to selectively switch between directing the second etching gas towards the vent, and directing the second etching gas along a fourth gas flow path towards the processing region, and a flow ratio controller operatively coupled to the first and second gas distribution channels and configured to direct the first or second etching gases towards the processing region.