公开(公告)号：US20170306482A1

公开(公告)日：2017-10-26

申请号：US15644554

申请日：2017-07-07

Applicant: Applied Materials, Inc.

Inventor： Kengo OHASHI ,  Takao HASHIMOTO ,  Shinobu ABE

IPC: C23C16/44 ,  H01J37/32

CPC classification number: C23C16/4405 ,  H01J37/32449 ,  H01J37/32862

Abstract: The present invention generally provides a processing chamber having shadow frame supports that direct cleaning gas flow to the corners of the chamber. The shadow frame supports are disposed along part of the chamber walls, thus leaving the corners unoccupied. During cleaning, the shadow frame is disposed in a way that it rests on both the substrate support and the shadow frame supports. Therefore, the cleaning gas flowing along the chamber walls is blocked by the shadow frame supports and the cleaning gas is forced to the corners since the shadow frame supports do not extend to the corners.

公开(公告)号：US20170092492A1

公开(公告)日：2017-03-30

申请号：US14879050

申请日：2015-10-08

Applicant: Applied Materials, Inc.

Inventor： Lai ZHAO ,  Gaku FURUTA ,  Soo Young CHOI ,  Tae Kyung WON ,  Takao HASHIMOTO

IPC: H01L21/02 ,  H01L29/66

CPC classification number: H01L21/02274 ,  C23C16/401 ,  C23C16/505 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02216 ,  H01L29/4908 ,  H01L29/66757

Abstract: Embodiments of the disclosure generally provide methods of forming a silicon containing layer utilizing a deposition gas mixture with Ar gas dilution in a plasma enhanced chemical vapor deposition (PECVD) process for display devices. The silicon containing layer may be used as an insulating layer, a passivation layer, a gate dielectric layer, an etch stop layer, an interlayer insulator or other suitable layers in thin film transistor (TFT) devices, or other suitable display applications. In one embodiment, a method for forming a silicon containing layer on a substrate includes supplying a gas mixture having a reacting gas, a TEOS gas and an argon gas into the processing chamber, wherein a ratio between the reacting gas and the argon gas is between about 10:1 and 1:60, and forming a silicon containing layer on the substrate

公开(公告)号：US20140109940A1

公开(公告)日：2014-04-24

申请号：US14037719

申请日：2013-09-26

Applicant: Applied Materials, Inc.

Inventor： Kengo OHASHI ,  Takao HASHIMOTO ,  Shinobu ABE

IPC: B08B7/00

CPC classification number: C23C16/4405 ,  H01J37/32449 ,  H01J37/32862

Abstract: The present invention generally provides a processing chamber having shadow frame supports that direct cleaning gas flow to the corners of the chamber. The shadow frame supports are disposed along part of the chamber walls, thus leaving the corners unoccupied. During cleaning, the shadow frame is disposed in a way that it rests on both the substrate support and the shadow frame supports. Therefore, the cleaning gas flowing along the chamber walls is blocked by the shadow frame supports and the cleaning gas is forced to the corners since the shadow frame supports do not extend to the corners.

Abstract translation: 本发明总体上提供了一种处理室，该处理室具有将清洁气流引导到室的角部的阴影框架支架。 阴影框架支撑件沿着室壁的一部分设置，从而使得角部未被占据。 在清洁期间，阴影框架以其搁置在基板支撑件和阴影框架支架上的方式设置。 因此，沿着室壁流动的清洁气体被阴影框架支撑件阻挡，并且由于阴影框架支撑件不延伸到拐角，清洁气体被迫到角落。