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公开(公告)号：US20180036775A1
公开(公告)日：2018-02-08
申请号：US15653785
申请日：2017-07-19
摘要： Implementations described herein generally relate to methods and apparatus for in-situ removal of unwanted deposition buildup from one or more interior surfaces of a semiconductor substrate-processing chamber. In one implementation, the method comprises forming a reactive fluorine species from a fluorine-containing cleaning gas mixture. The method further comprises delivering the reactive fluorine species into a processing volume of a substrate-processing chamber. The processing volume includes one or more aluminum-containing interior surfaces having unwanted deposits formed thereon. The method further comprises permitting the reactive fluorine species to react with the unwanted deposits and aluminum-containing interior surfaces of the substrate-processing chamber to form aluminum fluoride. The method further comprises exposing nitrogen-containing cleaning gas mixture to in-situ plasma to form reactive nitrogen species in the processing volume. The method further comprises permitting the reactive nitrogen species to react with the ammonium fluoride to convert the aluminum fluoride to aluminum nitride.
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公开(公告)号：US20180294139A1
公开(公告)日：2018-10-11
申请号：US15945413
申请日：2018-04-04
发明人： Bhaskar KUMAR , Sidharth BHATIA , Anup Kumar SINGH , Vivek Bharat SHAH , Ganesh BALASUBRAMANIAN
IPC分类号： H01J37/32 , H01L21/02 , H01L21/285 , C23C16/52
摘要： The present disclosure relates to methods and apparatus for reducing particle contamination on substrates in a plasma process chamber. In one embodiment, by applying a DC power to an electrode surrounding a processing region, the boundary of a plasma region formed in the processing region extends closer to the chamber body and outside of the diameter of the substrate support. In another embodiment, by applying a negative bias to an electrode or a positive bias to the lid, negatively charged species located at the boundary of the plasma region are lifted by the electrostatic force created by the negative bias or the positive bias. As a result, species located at the boundary of the plasma region will not fall onto the edge of the substrate disposed on the substrate support as the electric power for sustaining the plasma region is turned off, leading to reduced particle contamination on the substrate.
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公开(公告)号：US20230048661A1
公开(公告)日：2023-02-16
申请号：US17975452
申请日：2022-10-27
IPC分类号： H01J37/32 , C23C16/50 , C23C16/458 , C23C16/52
摘要： The present disclosure relates to methods and systems for chucking in substrate processing chambers. In one implementation, a method of chucking one or more substrates in a substrate processing chamber includes applying a chucking voltage to a pedestal. A substrate is disposed on a support surface of the pedestal. The method also includes ramping the chucking voltage from the applied voltage, detecting an impedance shift while ramping the chucking voltage, determining a corresponding chucking voltage at which the impedance shift occurs, and determining a refined chucking voltage based on the impedance shift and the corresponding chucking voltage.
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公开(公告)号：US20200381222A1
公开(公告)日：2020-12-03
申请号：US16996004
申请日：2020-08-18
发明人： Bhaskar KUMAR , Prashanth KOTHNUR , Sidharth BHATIA , Anup Kumar SINGH , Vivek Bharat SHAH , Ganesh BALASUBRAMANIAN , Changgong WANG
IPC分类号： H01J37/32
摘要： Embodiments of the present disclosure generally relate to apparatuses for reducing particle contamination on substrates in a plasma processing chamber. In one or more embodiments, an edge ring is provided and includes a top surface, a bottom surface opposite the top surface and extending radially outward, an outer vertical wall extending between and connected to the top surface and the bottom surface, an inner vertical wall opposite the outer vertical wall, an inner lip extending radially inward from the inner vertical wall, and an inner step disposed between and connected to the inner wall and the bottom surface. During processing, the edge ring shifts the high plasma density zone away from the edge area of the substrate to avoid depositing particles on the substrate when the plasma is de-energized.
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公开(公告)号：US20200350146A1
公开(公告)日：2020-11-05
申请号：US16927618
申请日：2020-07-13
发明人： Bhaskar KUMAR , Anup Kumar SINGH , Vivek Bharat SHAH , Sidharth BHATIA , Ganesh BALASUBRAMANIAN
IPC分类号： H01J37/32
摘要： A method and apparatus for operating a plasma processing chamber includes performing a plasma process at a process pressure and a pressure power to generate a plasma. A first ramping-down stage starts in which the process power and the process pressure are ramped down substantially simultaneously to an intermediate power level and an intermediate pressure level, respectively. The intermediate power level and intermediate pressure level are preselected so as to raise a plasma sheath boundary above a threshold height from a surface of a substrate. A purge gas is flowed from a showerhead assembly at a sufficiently high rate to sweep away contaminant particles trapped in the plasma such that one or more contaminant particles move outwardly of an edge of the substrate. A second ramping-down stage starts where the intermediate power level and the intermediate pressure level decline to a zero level and a base pressure, respectively.
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公开(公告)号：US20200286716A1
公开(公告)日：2020-09-10
申请号：US16803479
申请日：2020-02-27
IPC分类号： H01J37/32 , C23C16/50 , C23C16/458
摘要： The present disclosure relates to methods and systems for chucking in substrate processing chambers. In one implementation, a method of chucking one or more substrates in a substrate processing chamber includes applying a chucking voltage to a pedestal. A substrate is disposed on a support surface of the pedestal. The method also includes ramping the chucking voltage from the applied voltage, detecting an impedance shift while ramping the chucking voltage, determining a corresponding chucking voltage at which the impedance shift occurs, and determining a refined chucking voltage based on the impedance shift and the corresponding chucking voltage.
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公开(公告)号：US20190382889A1
公开(公告)日：2019-12-19
申请号：US16422793
申请日：2019-05-24
发明人： Venkata Sharat Chandra PARIMI , Zhijun JIANG , Ganesh BALASUBRAMANIAN , Vivek Bharat SHAH , Shailendra SRIVASTAVA , Amit Kumar BANSAL , Xinhai HAN , Vinay K. PRABHAKAR
摘要： Implementations of the present disclosure generally provide improved methods for cleaning a vacuum chamber to remove adsorbed contaminants therefrom prior to a chamber seasoning process while maintaining the chamber at desired deposition processing temperatures. The contaminants may be formed from the reaction of cleaning gases with the chamber components and the walls of the vacuum chamber.
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公开(公告)号：US20180204750A1
公开(公告)日：2018-07-19
申请号：US15873971
申请日：2018-01-18
发明人： Sidharth BHATIA , Edward P. HAMMOND, IV , Bhaskar KUMAR , Anup Kumar SINGH , Vivek Bharat SHAH , Ganesh BALASUBRAMANIAN
IPC分类号： H01L21/67 , H01L21/3065 , H01J37/32 , G06T7/00
CPC分类号： H01L21/67253 , G06T7/0004 , H01J37/321 , H01J37/32981 , H01J2237/334 , H01L21/3065
摘要： Embodiments of the present disclosure relate to a method and an apparatus for monitoring plasma behavior inside a plasma processing chamber. In one example, a method for monitoring plasma behavior includes acquiring at least one image of a plasma, and determining a plasma parameter based on the at least one image.
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公开(公告)号：US20210108309A1
公开(公告)日：2021-04-15
申请号：US16960277
申请日：2019-01-03
IPC分类号： C23C16/02 , C23C16/32 , C23C16/513 , C23C16/455 , C23C16/52
摘要： Implementations of the present disclosure generally relate to hardmask films and methods for depositing hardmask films. More particularly, implementations of the present disclosure generally relate to tungsten carbide hardmask films and processes for depositing tungsten carbide hardmask films. In one implementation, a method of forming a tungsten carbide film is provided. The method comprises forming a tungsten carbide initiation layer on a silicon-containing surface of a substrate at a first deposition rate. The method further comprises forming a tungsten carbide film on the tungsten carbide initiation layer at a second deposition rate, wherein the second deposition rate is greater than the first deposition rate.
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公开(公告)号：US20190259585A1
公开(公告)日：2019-08-22
申请号：US16262307
申请日：2019-01-30
发明人： Bhaskar KUMAR , Anup Kumar SINGH , Vivek Bharat SHAH , Sidharth BHATIA , Ganesh BALASUBRAMANIAN
IPC分类号： H01J37/32
摘要： A method and apparatus for operating a plasma processing chamber includes performing a plasma process at a process pressure and a pressure power to generate a plasma. A first ramping-down stage starts in which the process power and the process pressure are ramped down substantially simultaneously to an intermediate power level and an intermediate pressure level, respectively. The intermediate power level and intermediate pressure level are preselected so as to raise a plasma sheath boundary above a threshold height from a surface of a substrate. A purge gas is flowed from a showerhead assembly at a sufficiently high rate to sweep away contaminant particles trapped in the plasma such that one or more contaminant particles move outwardly of an edge of the substrate. A second ramping-down stage starts where the intermediate power level and the intermediate pressure level decline to a zero level and a base pressure, respectively.
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