公开(公告)号：US20220220635A1

公开(公告)日：2022-07-14

申请号：US17146572

申请日：2021-01-12

Applicant: Applied Materials, Inc.

Inventor： Yen Lin LEOW ,  Xinning LUAN ,  Hui CHEN ,  Kirk Allen FISHER ,  Shawn THOMAS

IPC: C30B25/16 ,  C30B29/36 ,  C30B25/10 ,  C30B25/18 ,  C30B29/68

Abstract: Embodiments of the present disclosure generally relate to silicon carbide coated base substrates, silicon carbide substrates thereof, and methods for forming silicon carbide coated base substrates. In some embodiments, a method includes introducing a first silicon-containing precursor to a process chamber at a first temperature of about 800° C. to less than 1,000° C. to form a first silicon carbide layer on a base substrate. The method includes introducing a second silicon-containing precursor, that is the same or different than the first silicon-containing precursor, to the process chamber at a second temperature of about 1,000° C. to about 1,400° C. to form a second silicon carbide layer on the first silicon carbide layer.

公开(公告)号：US20240052521A1

公开(公告)日：2024-02-15

申请号：US18492482

申请日：2023-10-23

Applicant: Applied Materials, Inc.

Inventor： Yen Lin LEOW ,  Xinning LUAN ,  Hui CHEN ,  Kirk Allen FISHER ,  Shawn THOMAS

IPC: C30B25/16 ,  C30B29/36 ,  C30B29/68 ,  C30B25/18 ,  C30B25/10

CPC classification number: C30B25/16 ,  C30B29/36 ,  C30B29/68 ,  C30B25/18 ,  C30B25/10

Abstract: Embodiments of the present disclosure generally relate to silicon carbide coated base substrates, silicon carbide substrates thereof, and methods for forming silicon carbide coated base substrates. In some embodiments, a method includes introducing a first silicon-containing precursor to a process chamber at a first temperature of about 800° C. to less than 1,000° C. to form a first silicon carbide layer on a base substrate. The method includes introducing a second silicon-containing precursor, that is the same or different than the first silicon-containing precursor, to the process chamber at a second temperature of about 1,000° C. to about 1,400° C. to form a second silicon carbide layer on the first silicon carbide layer.