公开(公告)号：US20240145281A1

公开(公告)日：2024-05-02

申请号：US18050384

申请日：2022-10-27

Applicant: Applied Materials, Inc.

Inventor： Martin Jeffrey SALINAS ,  Zhepeng CONG ,  Hui CHEN ,  Xinning LUAN ,  Ashur J. ATANOS

IPC: H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67294 ,  H01L21/67259 ,  H01L21/68785

Abstract: An apparatus, method, and system for identifying and obtaining information related to a substrate support and/or a pre-heat ring in a process chamber via imaging and image processing. In an embodiment, a substrate support is provided. The substrate support generally includes a top surface configured to receive a substrate in a process chamber and a marking feature disposed on the top surface of the substrate support, the marking feature configured to be detectable by an imaging apparatus coupled to the process chamber to provide information related to the substrate support via imaging when the substrate support is disposed within the process chamber.

公开(公告)号：US20220220635A1

公开(公告)日：2022-07-14

申请号：US17146572

申请日：2021-01-12

Applicant: Applied Materials, Inc.

Inventor： Yen Lin LEOW ,  Xinning LUAN ,  Hui CHEN ,  Kirk Allen FISHER ,  Shawn THOMAS

IPC: C30B25/16 ,  C30B29/36 ,  C30B25/10 ,  C30B25/18 ,  C30B29/68

Abstract: Embodiments of the present disclosure generally relate to silicon carbide coated base substrates, silicon carbide substrates thereof, and methods for forming silicon carbide coated base substrates. In some embodiments, a method includes introducing a first silicon-containing precursor to a process chamber at a first temperature of about 800° C. to less than 1,000° C. to form a first silicon carbide layer on a base substrate. The method includes introducing a second silicon-containing precursor, that is the same or different than the first silicon-containing precursor, to the process chamber at a second temperature of about 1,000° C. to about 1,400° C. to form a second silicon carbide layer on the first silicon carbide layer.

公开(公告)号：US20240274464A1

公开(公告)日：2024-08-15

申请号：US18108272

申请日：2023-02-10

Applicant: Applied Materials, Inc.

Inventor： Matthew Gabriel GOODMAN ,  John TOLLE ,  Shawn THOMAS ,  Lori D. WASHINGTON ,  Xinning LUAN ,  Zhepeng CONG

IPC: H01L21/687

CPC classification number: H01L21/68757 ,  H01L21/68785

Abstract: A susceptor for processing a substrate is provided including a base and a coating formed over the base. The base includes an outer rim having an inner edge, an outer edge, and a top connecting the inner edge to the outer edge; and an inner dish disposed inside the outer rim and coupled to the outer rim, the inner dish recessed from the top of the outer rim, the inner dish having a front side and an opposing back side. The coating has an outer surface that includes a first portion formed over the front side of the inner dish. The first portion of the outer surface of the coating includes a first region and a second region, the first region has a first average level of roughness, the second region has a second average level of roughness.

公开(公告)号：US20220364263A1

公开(公告)日：2022-11-17

申请号：US17731414

申请日：2022-04-28

Applicant: Applied Materials, Inc.

Inventor： Shawn Joseph BONHAM ,  Xinning LUAN ,  Hui CHEN ,  James M. AMOS ,  John NEWMAN ,  Kirk Allen FISHER ,  Aimee S. ERHARDT ,  Philip Michael AMOS ,  Zhiyuan YE ,  Shu-Kwan LAU ,  Lori D. WASHINGTON

IPC: C30B25/12 ,  C23C16/458

Abstract: Systems and apparatus for a reduced mass substrate support are disclosed, according to certain embodiments. A front side pocket is provided for support of a substrate, while a backside pocket is provided that reduces the mass of the substrate support. By providing the backside pocket, the mass of the overall substrate support is reduced, providing faster thermal cycling times for the substrate support and reducing the weight of the substrate support for transport. Lift pin systems, according to disclosed embodiments, are compatible with existing pedestal systems by providing a hollow extension from each lift pin hole that extends from a bottom of the backside pocket to provide support for lift pin insertion and operation.

公开(公告)号：US20240304492A1

公开(公告)日：2024-09-12

申请号：US18667082

申请日：2024-05-17

Applicant: Applied Materials, Inc.

Inventor： Hui CHEN ,  Xinning LUAN ,  Kirk Allen FISHER ,  Shawn Joseph BONHAM ,  Aimee S. ERHARDT ,  Zhepeng CONG ,  Shaofeng CHEN ,  Schubert S. CHU ,  James M. AMOS ,  Philip Michael AMOS ,  John NEWMAN

IPC: H01L21/687 ,  C23C16/32 ,  C23C16/458

CPC classification number: H01L21/68757 ,  C23C16/325 ,  C23C16/4583

Abstract: A susceptor for use in a processing chamber for supporting a wafer includes a susceptor substrate having a front side and a back side opposite the front side, and a coating layer deposited on the susceptor substrate. The front side has a pocket configured to hold a wafer to be processed in a processing chamber, the pocket being textured with a first pattern. The back side is textured with a second pattern.

公开(公告)号：US20220076988A1

公开(公告)日：2022-03-10

申请号：US17191786

申请日：2021-03-04

Applicant: Applied Materials, Inc.

Inventor： Hui CHEN ,  Xinning LUAN ,  Kirk Allen FISHER ,  Shawn Joseph BONHAM ,  Aimee S. ERHARDT ,  Zhepeng CONG ,  Shaofeng CHEN ,  Schubert S. CHU ,  James M. AMOS ,  Philip Michael AMOS ,  John NEWMAN

IPC: H01L21/687 ,  C23C16/458 ,  C23C16/32

Abstract: A susceptor for use in a processing chamber for supporting a wafer includes a susceptor substrate having a front side and a back side opposite the front side, and a coating layer deposited on the susceptor substrate. The front side has a pocket configured to hold a wafer to be processed in a processing chamber, the pocket being textured with a first pattern. The back side is textured with a second pattern.

公开(公告)号：US20240363390A1

公开(公告)日：2024-10-31

申请号：US18540680

申请日：2023-12-14

Applicant: Applied Materials, Inc.

Inventor： Xinning LUAN ,  Shawn THOMAS ,  Hui CHEN

IPC: H01L21/687 ,  C23C16/458 ,  C30B25/10 ,  C30B25/12

CPC classification number: H01L21/68735 ,  C23C16/4586 ,  C30B25/10 ,  C30B25/12 ,  H01L21/68742

Abstract: The present disclosure relates to gas flow substrate supports, processing chambers, and related methods and apparatus, for semiconductor manufacturing. In one or more embodiments, a substrate support applicable for semiconductor manufacturing includes a first outer surface, a ledge disposed inwardly of the first outer surface and recessed relative to the first outer surface, and a pocket defining a pocket surface that is disposed inwardly of the ledge and recessed relative to the ledge. The substrate support includes a plurality of first flow openings extending into the pocket surface, a plurality of second flow openings extending into the ledge, and a plurality of third flow openings extending into the first outer surface.

公开(公告)号：US20240274463A1

公开(公告)日：2024-08-15

申请号：US18108407

申请日：2023-02-10

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Nimrod SMITH ,  Tao SHENG ,  Chen-Ying WU ,  Hui CHEN ,  Xinning LUAN

IPC: H01L21/687 ,  H01L21/02

CPC classification number: H01L21/68735 ,  H01L21/0262

Abstract: The present disclosure relates to overlapping substrate supports and pre-heat rings, and related process kits, processing chambers, methods, and components to facilitate process adjustability. In one or more embodiments, a substrate support applicable for use in semiconductor manufacturing includes a first side face and a second side face opposing the first side face. The first side face includes a support surface. The second side face includes a backside surface, and a first shoulder protruding relative to the backside surface. The first shoulder is disposed outwardly of the backside surface. The substrate support includes an arcuate outer face extending between the first side face and the second side face.

公开(公告)号：US20240213078A1

公开(公告)日：2024-06-27

申请号：US18087255

申请日：2022-12-22

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Xinning LUAN

IPC: H01L21/687 ,  F27B17/00 ,  F27D5/00 ,  H01L21/67

CPC classification number: H01L21/6875 ,  F27B17/0025 ,  F27D5/0037 ,  H01L21/67115 ,  H05B3/0047

Abstract: Embodiments of the present disclosure relate to substrate supports, transfer apparatus, processing chambers, and related components and methods, for substrate deformation (e.g., bowing). In one or more implementations, a substrate used in relation to the present disclosure can be deformed (e.g., bowed) before and/or during processing (such as epitaxial deposition). In one implementation, a substrate support applicable for use in semiconductor manufacturing operations includes a support body. The support body includes an outer surface, a recessed surface that is recessed relative to the outer surface, and a pocket surface between the outer surface and the recessed surface. The recessed surface and the pocket surface at least partially define a pocket of the support body. The support body includes a plurality of supports protruding relative to the recessed surface. The substrate support includes a barrier interfacing with the plurality of supports. The barrier includes a plurality of barrier supports.

公开(公告)号：US20240052521A1

公开(公告)日：2024-02-15

申请号：US18492482

申请日：2023-10-23

Applicant: Applied Materials, Inc.

Inventor： Yen Lin LEOW ,  Xinning LUAN ,  Hui CHEN ,  Kirk Allen FISHER ,  Shawn THOMAS

IPC: C30B25/16 ,  C30B29/36 ,  C30B29/68 ,  C30B25/18 ,  C30B25/10

CPC classification number: C30B25/16 ,  C30B29/36 ,  C30B29/68 ,  C30B25/18 ,  C30B25/10

Abstract: Embodiments of the present disclosure generally relate to silicon carbide coated base substrates, silicon carbide substrates thereof, and methods for forming silicon carbide coated base substrates. In some embodiments, a method includes introducing a first silicon-containing precursor to a process chamber at a first temperature of about 800° C. to less than 1,000° C. to form a first silicon carbide layer on a base substrate. The method includes introducing a second silicon-containing precursor, that is the same or different than the first silicon-containing precursor, to the process chamber at a second temperature of about 1,000° C. to about 1,400° C. to form a second silicon carbide layer on the first silicon carbide layer.