公开(公告)号：US09236266B2

公开(公告)日：2016-01-12

申请号：US14287850

申请日：2014-05-27

Applicant: Applied Materials, Inc.

Inventor： Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle ,  Yunyu Wang ,  Young Lee

IPC: H01L21/3065 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01L21/31116

Abstract: A method of etching exposed silicon-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-carbon-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-carbon-containing material from the exposed silicon-and-carbon-containing material regions while very slowly removing other exposed materials. The silicon-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-carbon-containing material at more than twenty times the rate of silicon oxide.

Abstract translation: 描述了在图案化的异质结构上蚀刻曝露的含硅和碳的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与含硅和碳的材料的暴露区域反应。 等离子体流出物与图案化的异质结构反应，以便从暴露的含硅和碳的材料区域选择性地除去含硅和碳的材料，同时非常缓慢地除去其它暴露的材料。 含硅和碳的材料选择性部分取决于位于远程等离子体和基板处理区域之间的离子抑制元件的存在。 离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。 该方法可用于以超过二氧化硅的二十倍的速率选择性地除去含硅和碳的材料。

公开(公告)号：US20140187045A1

公开(公告)日：2014-07-03

申请号：US13752769

申请日：2013-01-29

Applicant: APPLIED MATERIALS, INC.

Inventor： Zhong Qiang Hua ,  Hien Minh Le ,  Young Lee

IPC: H01L21/02

CPC classification number: H01L21/02266 ,  C23C16/045 ,  C23C16/345 ,  C23C16/507 ,  H01L21/02063 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02301 ,  H01L21/02315

Abstract: Methods of filling features with silicon nitride using high-density plasma chemical vapor deposition are described. Narrow trenches may be filled with gapfill silicon nitride without damaging compressive stress. A low but non-zero bias power is used during deposition of the gapfill silicon nitride. An etch step is included between each pair of silicon nitride high-density plasma deposition steps in order to supply sputtering which would normally be supplied by high bias power.

Abstract translation: 描述了使用高密度等离子体化学气相沉积的氮化硅填充特征的方法。 窄沟槽可以填充间隙填充氮化硅，而不会损伤压应力。 在间隙填充氮化硅的沉积期间使用低但非零的偏置功率。 在每对氮化硅高密度等离子体沉积步骤之间包括蚀刻步骤，以便提供通常由高偏压功率提供的溅射。

公开(公告)号：US20140273491A1

公开(公告)日：2014-09-18

申请号：US14287850

申请日：2014-05-27

Applicant: Applied Materials, Inc.

Inventor： Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle ,  Yunyu Wang ,  Young Lee

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01L21/31116

Abstract: A method of etching exposed silicon-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-carbon-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-carbon-containing material from the exposed silicon-and-carbon-containing material regions while very slowly removing other exposed materials. The silicon-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-carbon-containing material at more than twenty times the rate of silicon oxide.

Abstract translation: 描述了在图案化的异质结构上蚀刻暴露的含硅和碳的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与含硅和碳的材料的暴露区域反应。 等离子体流出物与图案化的异质结构反应，以便从暴露的含硅和碳的材料区域选择性地除去含硅和碳的材料，同时非常缓慢地除去其它暴露的材料。 含硅和碳的材料选择性部分取决于位于远程等离子体和基板处理区域之间的离子抑制元件的存在。 离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。 该方法可用于以超过二氧化硅的二十倍的速率选择性地除去含硅和碳的材料。