公开(公告)号：US09887096B2

公开(公告)日：2018-02-06

申请号：US14714050

申请日：2015-05-15

Applicant: Applied Materials, Inc.

Inventor： Seung H. Park ,  Yunyu Wang ,  Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/311 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/3065

Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch created from a remote plasma etch. The remote plasma excites a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. Reactants thereby produced etch the patterned heterogeneous structures to remove two separate regions of differing silicon oxide at different etch rates. The methods may be used to remove low density silicon oxide while removing less high density silicon oxide.

公开(公告)号：US08642481B2

公开(公告)日：2014-02-04

申请号：US13745251

申请日：2013-01-18

Applicant: Applied Materials, Inc.

Inventor： Yunyu Wang ,  Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

IPC: H01L21/302

CPC classification number: H01L21/3065 ,  H01L21/31116

Abstract: A method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-nitrogen-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-nitrogen-containing material from the exposed silicon-and-nitrogen-containing material regions while very slowly removing other exposed materials. The silicon-and-nitrogen-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-nitrogen-containing material at more than twenty times the rate of silicon oxide.

Abstract translation: 描述了在图案化的异质结构上蚀刻暴露的含硅和氮的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与含硅和氮的材料的暴露区域反应。 等离子体流出物与图案化的异质结构反应，从暴露的含硅和氮的材料区域中选择性地除去含硅和氮的材料，同时非常缓慢地除去其它暴露的材料。 含氮和氮的材料的选择性部分取决于位于远程等离子体和衬底处理区域之间的离子抑制元件的存在。 离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。 该方法可用于以超过二氧化硅速率的二十倍来选择性地除去含硅和氮的材料。

公开(公告)号：US20150249018A1

公开(公告)日：2015-09-03

申请号：US14714050

申请日：2015-05-15

Applicant: Applied Materials, Inc.

Inventor： Seung H. Park ,  Yunyu Wang ,  Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/3065

Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch created from a remote plasma etch. The remote plasma excites a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. Reactants thereby produced etch the patterned heterogeneous structures to remove two separate regions of differing silicon oxide at different etch rates. The methods may be used to remove low density silicon oxide while removing less high density silicon oxide.

Abstract translation: 描述了在图案化的异质结构上蚀刻暴露的氧化硅的方法，并且包括从远程等离子体蚀刻产生的气相蚀刻。 远程等离子体激发含氟前体。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与水蒸汽结合。 由此产生的反应物蚀刻图案化的异相结构，以以不同的蚀刻速率移除不同氧化硅的两个分开的区域。 该方法可用于去除低密度氧化硅，同时去除较少的高密度氧化硅。

公开(公告)号：US09034770B2

公开(公告)日：2015-05-19

申请号：US13841009

申请日：2013-03-15

Applicant: Applied Materials, Inc.

Inventor： Seung H. Park ,  Yunyu Wang ,  Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/3065

Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch created from a remote plasma etch. The remote plasma excites a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. Reactants thereby produced etch the patterned heterogeneous structures to remove two separate regions of differing silicon oxide at different etch rates. The methods may be used to remove low density silicon oxide while removing less high density silicon oxide.

Abstract translation: 描述了在图案化的异质结构上蚀刻暴露的氧化硅的方法，并且包括从远程等离子体蚀刻产生的气相蚀刻。 远程等离子体激发含氟前体。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与水蒸汽结合。 由此产生的反应物蚀刻图案化的异相结构，以以不同的蚀刻速率移除不同氧化硅的两个分开的区域。 该方法可用于去除低密度氧化硅，同时去除较少的高密度氧化硅。

公开(公告)号：US08541312B2

公开(公告)日：2013-09-24

申请号：US13745109

申请日：2013-01-18

Applicant: Applied Materials, Inc.

Inventor： Yunyu Wang ,  Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

IPC: H01L21/302 ,  B44C1/22

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/32137

Abstract: A method of suppressing the etch rate for exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. The etch selectivity of silicon relative to silicon nitride and other silicon-and-nitrogen-containing material is increased using the method. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-nitrogen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including nitrogen trifluoride and hydrogen (H2). The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.

Abstract translation: 描述了抑制图案化异质结构上暴露的含硅和氮的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。 使用该方法，硅相对于氮化硅和其它含硅和氮的材料的蚀刻选择性增加。 远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氮的材料上形成保护性固体副产物。 第一级的等离子体流出物由包括三氟化氮和氢气（H 2）在内的前体组合的远程等离子体形成。 远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地去除缺乏保护性固体副产物的材料。 第二级的等离子体流出物由含氟前体的远程等离子体形成。

公开(公告)号：US09236266B2

公开(公告)日：2016-01-12

申请号：US14287850

申请日：2014-05-27

Applicant: Applied Materials, Inc.

Inventor： Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle ,  Yunyu Wang ,  Young Lee

IPC: H01L21/3065 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01L21/31116

Abstract: A method of etching exposed silicon-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-carbon-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-carbon-containing material from the exposed silicon-and-carbon-containing material regions while very slowly removing other exposed materials. The silicon-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-carbon-containing material at more than twenty times the rate of silicon oxide.

Abstract translation: 描述了在图案化的异质结构上蚀刻曝露的含硅和碳的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与含硅和碳的材料的暴露区域反应。 等离子体流出物与图案化的异质结构反应，以便从暴露的含硅和碳的材料区域选择性地除去含硅和碳的材料，同时非常缓慢地除去其它暴露的材料。 含硅和碳的材料选择性部分取决于位于远程等离子体和基板处理区域之间的离子抑制元件的存在。 离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。 该方法可用于以超过二氧化硅的二十倍的速率选择性地除去含硅和碳的材料。

公开(公告)号：US20140080309A1

公开(公告)日：2014-03-20

申请号：US13841009

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Seung H. Park ,  Yunyu Wang ,  Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/3065

Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch created from a remote plasma etch. The remote plasma excites a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. Reactants thereby produced etch the patterned heterogeneous structures to remove two separate regions of differing silicon oxide at different etch rates. The methods may be used to remove low density silicon oxide while removing less high density silicon oxide.

Abstract translation: 描述了在图案化的异质结构上蚀刻暴露的氧化硅的方法，并且包括从远程等离子体蚀刻产生的气相蚀刻。 远程等离子体激发含氟前体。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与水蒸汽结合。 由此产生的反应物蚀刻图案化的异相结构，以以不同的蚀刻速率移除不同氧化硅的两个分开的区域。 该方法可用于去除低密度氧化硅，同时去除较少的高密度氧化硅。

公开(公告)号：US20140273491A1

公开(公告)日：2014-09-18

申请号：US14287850

申请日：2014-05-27

Applicant: Applied Materials, Inc.

Inventor： Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle ,  Yunyu Wang ,  Young Lee

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01L21/31116

Abstract: A method of etching exposed silicon-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-carbon-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-carbon-containing material from the exposed silicon-and-carbon-containing material regions while very slowly removing other exposed materials. The silicon-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-carbon-containing material at more than twenty times the rate of silicon oxide.

Abstract translation: 描述了在图案化的异质结构上蚀刻暴露的含硅和碳的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与含硅和碳的材料的暴露区域反应。 等离子体流出物与图案化的异质结构反应，以便从暴露的含硅和碳的材料区域选择性地除去含硅和碳的材料，同时非常缓慢地除去其它暴露的材料。 含硅和碳的材料选择性部分取决于位于远程等离子体和基板处理区域之间的离子抑制元件的存在。 离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。 该方法可用于以超过二氧化硅的二十倍的速率选择性地除去含硅和碳的材料。

公开(公告)号：US20130130507A1

公开(公告)日：2013-05-23

申请号：US13745251

申请日：2013-01-18

Applicant: Applied Materials, Inc.

Inventor： Yunyu Wang ,  Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01L21/31116

Abstract: A method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-nitrogen-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-nitrogen-containing material from the exposed silicon-and-nitrogen-containing material regions while very slowly removing other exposed materials. The silicon-and-nitrogen-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-nitrogen-containing material at more than twenty times the rate of silicon oxide.

公开(公告)号：US20130130506A1

公开(公告)日：2013-05-23

申请号：US13745109

申请日：2013-01-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Yunyu Wang ,  Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/32137

Abstract: A method of suppressing the etch rate for exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. The etch selectivity of silicon relative to silicon nitride and other silicon-and-nitrogen-containing material is increased using the method. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-nitrogen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including nitrogen trifluoride and hydrogen (H2). The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.