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    METAL PROCESSING USING HIGH DENSITY PLASMA
    5.
    发明申请
    METAL PROCESSING USING HIGH DENSITY PLASMA 审中-公开
    使用高密度等离子体进行金属加工

    公开(公告)号：US20140186544A1

    公开(公告)日：2014-07-03

    申请号：US13752520

    申请日：2013-01-29

    申请人： Applied Materials, Inc.

    发明人： Zhong Qiang Hua

    IPC分类号： C23C16/505

    CPC分类号： H01L21/02266 ,  C23C16/045 ,  C23C16/345 ,  C23C16/507 ,  H01L21/02063 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02301 ,  H01L21/02315

    摘要： Methods of forming dielectric layers using high-density plasma chemical vapor deposition are described. Dielectric layers are formed over metal films. The metal film is present on a substrate prior to entering the high-density plasma processing chamber. The metal film is processed to remove oxidation and optionally to improve adhesion of the dielectric layer on the metal film.

    摘要翻译： 描述了使用高密度等离子体化学气相沉积形成电介质层的方法。 在金属膜上形成介电层。 在进入高密度等离子体处理室之前，金属膜存在于基板上。 处理金属膜以除去氧化并且任选地改善电介质层对金属膜的粘附。

    PRETREATMENT AND IMPROVED DIELECTRIC COVERAGE
    8.
    发明申请
    PRETREATMENT AND IMPROVED DIELECTRIC COVERAGE 审中-公开
    预处理和改进的电介质覆盖

    公开(公告)号：US20130252440A1

    公开(公告)日：2013-09-26

    申请号：US13623792

    申请日：2012-09-20

    申请人： APPLIED MATERIALS, INC.

    发明人： Lei Luo ,  Shankar Venkataraman ,  Manuel A. Hernandez ,  Kedar Sapre ,  Zhong Qiang Hua

    IPC分类号： H01L21/02

    CPC分类号： H01L21/0226 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/02362 ,  H01L21/76831 ,  H01L21/76898

    摘要： Methods of conformally depositing silicon oxide layers on patterned substrates are described. The patterned substrates are plasma treated such that subsequently deposited silicon oxide layers may deposit uniformly on walls of deep closed trenches. The technique is particularly useful for through-substrate vias (TSVs) which require especially deep trenches. The trenches may be closed at the bottom and deep to enable through-substrate vias (TSVs) by later removing a portion of the backside substrate (near to the closed end of the trench). The conformal silicon oxide layer thickness on the sidewalls near the bottom of a trench is greater than or about 70% of the conformal silicon oxide layer thickness near the top of the trench in embodiments of the invention. The improved uniformity of the silicon oxide layer enables a subsequently deposited conducting plug to be thicker and offer less electrical resistance.

    摘要翻译： 描述了在图案化衬底上共形沉积氧化硅层的方法。 图案化的衬底被等离子体处理，使得随后沉积的氧化硅层可以均匀地沉积在深闭合的沟槽的壁上。 该技术对于需要特别深的沟槽的贯通衬底通孔（TSV）特别有用。 沟槽可以在底部和深处封闭，以便通过稍后去除背面衬底的一部分（靠近沟槽的封闭端）来实现贯穿衬底通孔（TSV）。 在本发明的实施方案中，靠近沟槽底部的侧壁上的共形氧化硅层厚度大于或接近沟槽顶部的共形氧化硅层厚度的约70％。 氧化硅层的改进的均匀性使得随后沉积的导电插头更厚并且提供更少的电阻。