INTRODUCTION OF METAL IN HARD MASK FOR HIGH ASPECT RATIO DEVICE PATTERNING

    公开(公告)号:US20240395561A1

    公开(公告)日:2024-11-28

    申请号:US18637181

    申请日:2024-04-16

    Abstract: A method for patterning a boron-containing hard mask includes patterning an oxide hard mask formed on a boron-containing hard mask, and patterning the boron-containing hard mask using the patterned oxide hard mask, wherein the oxide hard mask comprises silicon oxide (SiO2), the boron-containing hard mask is doped with one or more metal elements, and the patterning of the boron-containing hard mask comprises etching the boron-containing hard mask through openings of the patterned oxide hard mask using an etching gas mixture comprising chlorine (Cl2), hydrogen bromide (HBr), and oxygen (O2).

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