公开(公告)号：US20150054973A1

公开(公告)日：2015-02-26

申请号：US14460966

申请日：2014-08-15

申请人： Aptina Imaging Corporation

发明人： Sergey Velichko

IPC分类号： H04N5/235 ,  H04N5/369 ,  H04N5/351

CPC分类号： H04N5/369 ,  H04N5/232 ,  H04N5/3559 ,  H04N5/37452 ,  H04N5/37457

摘要： An imaging system may include an array of image pixels arranged in rows and columns that includes first and second pixels in two different columns and a common row. A first column readout circuit may control the first pixel to exhibit a first gain and a second column readout circuit may control the second pixel to exhibit a second gain. The first and second readout circuits may determine whether to adjust the gain of the first and second pixels based on image signals that are captured by the first and second pixels. For example, the first readout circuit may selectively activate a dual conversion gain transistor in the first pixel based on an image signal received from the first pixel and the second readout circuit may independently and selectively activate a dual conversion gain transistor in the second pixel based on an image signal received from the second pixel.

摘要翻译： 成像系统可以包括排列成行和列的图像像素阵列，其包括两个不同列中的第一和第二像素以及公共行。 第一列读出电路可以控制第一像素呈现第一增益，第二列读出电路可以控制第二像素呈现第二增益。 第一和第二读出电路可以基于由第一和第二像素捕获的图像信号来确定是否调整第一和第二像素的增益。 例如，第一读出电路可以基于从第一像素接收的图像信号来选择性地激活第一像素中的双转换增益晶体管，并且第二读出电路可以基于第二像素单独地和选择性地激活第二像素中的双转换增益晶体管 从第二像素接收的图像信号。

公开(公告)号：US20150054962A1

公开(公告)日：2015-02-26

申请号：US14461122

申请日：2014-08-15

申请人： Aptina Imaging Corporation

发明人： Swarnal Borthakur ,  Ulrich Boettiger ,  Sergey Velichko

IPC分类号： H04N5/33 ,  H04N5/374 ,  H04N9/04

CPC分类号： H04N5/332 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14647 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H04N5/369 ,  H01L2924/00014 ,  H01L2924/00

摘要： An imaging system may include a first image sensor die stacked on top of a second image sensor die. A pixel array may include first pixels having photodiodes in the first image sensor die and second pixels having photodiodes in the second image sensor die. The first pixels may be optimized to detect a first type of electromagnetic radiation (e.g., visible light), whereas the second pixels may be optimized to detect a second type of electromagnetic radiation (e.g., infrared light). Light guide channels may be formed in the first image sensor die to help guide incident light to the photodiodes in the second image sensor substrate. The first and second image sensor dies may be bonded at a wafer level. A first image sensor wafer may be a backside illumination image sensor wafer and a second image sensor wafer may be a front or backside illumination image sensor wafer.

摘要翻译： 成像系统可以包括堆叠在第二图像传感器芯片的顶部上的第一图像传感器管芯。 像素阵列可以包括在第一图像传感器管芯中具有光电二极管的第一像素和在第二图像传感器管芯中具有光电二极管的第二像素。 可以优化第一像素以检测第一类型的电磁辐射（例如可见光），而可以优化第二像素以检测第二类型的电磁辐射（例如，红外光）。 可以在第一图像传感器管芯中形成导光通道，以帮助将入射光引导到第二图像传感器基板中的光电二极管。 第一和第二图像传感器管芯可以在晶片级结合。 第一图像传感器晶片可以是背面照明图像传感器晶片，并且第二图像传感器晶片可以是前侧或后侧照明图像传感器晶片。

公开(公告)号：US20140077323A1

公开(公告)日：2014-03-20

申请号：US13954844

申请日：2013-07-30

申请人： Aptina Imaging Corporation

发明人： Sergey Velichko ,  Gennadiy Agranov

IPC分类号： H01L27/146

CPC分类号： H01L27/1464 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14683 ,  H01L27/14689

摘要： An imaging system may include an image sensor having backside illuminated near infrared image sensor pixels. Each pixel may be formed in a graded epitaxial substrate layer such as a graded n-type epitaxial layer. Each pixel may be separated from an adjacent pixel by an isolation trench formed in the graded epitaxial layer. The isolation trench may be a continuous isolation trench or may be formed from a combined front side isolation trench and backside isolation trench that are separated by a wall structure. A buried front side reflector may be provided that reflects light such as infrared light that has passed through a pixel back into the pixel, thereby effectively doubling the silicon absorption depth of the pixels.

摘要翻译： 成像系统可以包括具有背面照射的近红外图像传感器像素的图像传感器。 每个像素可以形成在渐变的外延衬底层中，例如渐变的n型外延层。 每个像素可以通过形成在渐变外延层中的隔离沟槽与相邻像素分离。 隔离沟槽可以是连续的隔离沟槽，或者可以由由壁结构隔开的组合的前侧隔离沟槽和背侧隔离沟槽形成。 可以提供将已经通过像素的红外光等的光反射回像素的掩埋的前侧反射器，从而有效地使像素的硅吸收深度加倍。

公开(公告)号：US20150144790A1

公开(公告)日：2015-05-28

申请号：US14092611

申请日：2013-11-27

申请人： Aptina Imaging Corporation

发明人： Sergey Velichko ,  Gennadiy Agranov

IPC分类号： G01B11/24 ,  G01S17/08 ,  H01L27/148

CPC分类号： G01S17/08 ,  G01S7/4816 ,  G01S7/4863 ,  G01S17/89 ,  H01L27/14875

摘要： Electronic devices may include time-of-flight (ToF) image pixels. Each ToF pixel may include a photodiode, a first capacitor coupled to the photodiode via a first transfer gate, a second capacitor coupled to the photodiode via a second transfer gate, and a third capacitor coupled to the photodiode via a third transfer gate. The first transfer gate may be turned on for a given duration to store a first charge in the first capacitor. The second transfer gate may be turned on for the given duration to store a second charge in the second capacitor. The third transfer gate may be turned on for a duration that is longer than the given duration to store a third charge in the third capacitor. Depth information may be computed based on the first, second, and third stored charges and a corresponding pixel constant.

摘要翻译： 电子设备可以包括飞行时间（ToF）图像像素。 每个ToF像素可以包括光电二极管，经由第一传输栅极耦合到光电二极管的第一电容器，经由第二传输栅极耦合到光电二极管的第二电容器，以及经由第三传输栅极耦合到光电二极管的第三电容器。 第一传输门可以被打开一段给定的持续时间以将第一电荷存储在第一电容器中。 第二传输门可以在给定的持续时间内导通以将第二电荷存储在第二电容器中。 第三传输门可以接通持续时间长于给定的持续时间以将第三电荷存储在第三电容器中。 可以基于第一，第二和第三存储的电荷和相应的像素常数来计算深度信息。

公开(公告)号：US20140078310A1

公开(公告)日：2014-03-20

申请号：US13954823

申请日：2013-07-30

申请人： Aptina Imaging Corporation

发明人： Sergey Velichko ,  Gennadly Agranov

IPC分类号： H04N5/33

CPC分类号： H04N5/33 ,  H01L27/1463 ,  H01L27/14643

摘要： An imaging system may include an image sensor having front side illuminated near infrared image sensor pixels. Each pixel may be formed in a graded epitaxial substrate layer such as a graded p-type epitaxial layer or a graded n-type epitaxial layer on a graded p-type epitaxial layer. Each pixel may be separated from an adjacent pixel by an isolation trench formed in the graded epitaxial layer. A deep p-well may be formed within each isolation trench. The isolation trenches and photodiodes for the pixels may be formed in the graded p-type epitaxial layer or the graded n-type epitaxial layer. The graded p-type epitaxial layer may have an increasing concentration of dopants that increases toward the backside of the image sensor. The graded n-type epitaxial layer may have an increasing concentration of dopants that increases toward the front side of the image sensor.

摘要翻译： 成像系统可以包括具有前侧照明的近红外图像传感器像素的图像传感器。 每个像素可以形成在渐变的外延衬底层，例如渐变p型外延层或渐变p型外延层上的渐变n型外延层。 每个像素可以通过形成在渐变外延层中的隔离沟槽与相邻像素分离。 可以在每个隔离沟槽内形成深p阱。 用于像素的隔离沟槽和光电二极管可以形成在渐变的p型外延层或渐变的n型外延层中。 渐变的p型外延层可能具有朝向图像传感器的背面增加的掺杂剂浓度的增加。 渐变的n型外延层可能具有朝着图像传感器的前侧增加的掺杂剂浓度的增加。

公开(公告)号：US20130200251A1

公开(公告)日：2013-08-08

申请号：US13746211

申请日：2013-01-21

申请人： Aptina Imaging Corporation

发明人： Sergey Velichko

IPC分类号： H01L31/0232 ,  H01L31/18 ,  H01L27/146

CPC分类号： H01L31/02327 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14685 ,  H01L31/18

摘要： An image sensor may be provided having a pixel array that includes optical cavity image pixels. An optical cavity image pixel may include a photosensitive element in a substrate and a reflective cavity formed from a frontside reflector that is embedded in an intermetal dielectric stack, a backside reflector formed in a dielectric layer above the photosensor that partially covers the photosensor, and sidewall reflectors formed in the substrate between adjacent photosensors using deep trench isolation techniques. Each optical cavity image pixel may also include a light-guide trench above the photosensor that guides light into the reflective cavity for that pixel. Each optical cavity pixel may also include color filter material in the trench. Light that is guided into the reflective cavity by the light-guide trench may experience multiple reflections from the reflectors of the reflective cavity before being absorbed and detected by the photosensor.

摘要翻译： 可以提供具有包括光腔图像像素的像素阵列的图像传感器。 光腔图像像素可以包括衬底中的感光元件和由嵌入在金属间电介质堆叠中的前侧反射器形成的反射腔，形成在部分地覆盖光传感器的光电传感器上方的电介质层中的背面反射器，以及侧壁 使用深沟槽隔离技术在相邻光电传感器之间形成在衬底中的反射器。 每个光腔图像像素还可以包括光传感器上方的光导沟槽，其将光引导到该像素的反射腔中。 每个光腔像素还可以包括沟槽中的滤色器材料。 由光导槽引导到反射腔中的光可以在被光电传感器吸收和检测之前经历来自反射腔的反射器的多次反射。

公开(公告)号：US20140078349A1

公开(公告)日：2014-03-20

申请号：US13955765

申请日：2013-07-31

申请人： Aptina Imaging Corporation

发明人： Sergey Velichko ,  Gennadiy Agranov

IPC分类号： H04N5/357

CPC分类号： H04N5/357 ,  H04N5/359

摘要： An image sensor may include crosstalk calibration pixels. Crosstalk calibration pixels may include exposed pixels and shielded pixels. Exposed pixels may be partially or completely surrounded by shielded pixels. Calibration pixels may be formed in a checkerboard pattern of alternating shielded and exposed pixels or a double checkerboard pattern of alternating pairs of shielded and exposed pixels. Exposed pixels may have apertures of various size in a shielding layer that shields the shielded pixels from light. Signals generated by exposed and shielded pixels may be used in assessing pixel optical and electrical crosstalk and indirectly deducing the spectral composition of incoming light for particular locations in a pixel array. Information about local crosstalk across the array may be used in coordinate dependent color correction matrices, white balance algorithms, luminance and chroma noise cancellation, edge sharpening, assessment of pixel implantation depth, and measuring a modulation transfer function.

摘要翻译： 图像传感器可以包括串扰校准像素。 串扰校准像素可以包括曝光的像素和屏蔽像素。 曝光的像素可以被屏蔽的像素部分地或完全地包围。 校准像素可以以交替屏蔽和曝光的像素的棋盘图案或交替的屏蔽和曝光像素对的双棋盘图案形成。 曝光的像素可以在遮蔽屏蔽层的屏蔽层中具有各种尺寸的孔，以遮蔽屏蔽像素。 由曝光和屏蔽像素产生的信号可用于评估像素光学和电串扰，并间接地推导出像素阵列中特定位置的入射光的光谱组成。 关于阵列上的局部串扰的信息可以用于坐标依赖的颜色校正矩阵，白平衡算法，亮度和色度噪声消除，边缘锐化，像素注入深度的评估以及测量调制传递函数。

公开(公告)号：US20150009375A1

公开(公告)日：2015-01-08

申请号：US14012403

申请日：2013-08-28

申请人： Aptina Imaging Corporation

发明人： Gennadiy Agranov ,  Sergey Velichko ,  John W. Ladd

IPC分类号： H04N5/355

CPC分类号： H04N5/35536 ,  H04N5/35554 ,  H04N5/35572 ,  H04N5/35581

摘要： An imaging system may include an image sensor having an array of image pixels. Each image pixel may include an electronic shutter for controlling when a photosensor in the image pixel accumulates charge. The electronic shutter may be operable in an open state during which charge is allowed to accumulate on the photosensor and a closed state during which charge is drained from the photosensor. The electronic shutter may be cycled through multiple open and closed states during an image frame capture. At the end of each open state, the charge that has been acquired on the photosensor may be transferred from the photosensor to a pixel memory element. By breaking up the total exposure time for a pixel during an image frame into shorter, non-continuous periods of exposure time, dynamic scenery image artifacts may be minimized while maintaining the desired total exposure time.

摘要翻译： 成像系统可以包括具有图像像素阵列的图像传感器。 每个图像像素可以包括用于控制图像像素中的光电传感器何时累积电荷的电子快门。 电子快门可以在打开状态下操作，在打开状态期间，电荷被允许积聚在光传感器上，并且关闭状态，在该状态期间，电荷从光传感器排出。 电子快门可以在图像帧捕获期间循环多个打开和关闭状态。 在每个打开状态的结束时，已经在光传感器上获取的电荷可以从光传感器传送到像素存储元件。 通过将图像帧中的像素的总曝光时间分解为更短的非连续的曝光时间段，可以在保持期望的总曝光时间的同时最小化动态风景图像伪像。

公开(公告)号：US20140197301A1

公开(公告)日：2014-07-17

申请号：US14157492

申请日：2014-01-16

申请人： APTINA IMAGING CORPORATION

发明人： Sergey Velichko ,  Gennadiy Agranov ,  Victor Lenchenkov

IPC分类号： H01L27/146

CPC分类号： H01L27/14625 ,  H01L27/14609 ,  H01L27/14643

摘要： An image sensor operable in global shutter mode may include an array of image pixels. Each image pixel may include a photodiode for detecting incoming light and a separate storage diode for temporarily storing charge. To maximize the efficiency of the image pixel array, image pixels may include light guide structures and light shield structures. The light guide structures may be used to funnel light away from the storage node and into the photodiode, while the light shield structures may be formed over storage nodes to block light from entering the storage nodes. The light guide structures may fill cone-shaped cavities in a dielectric layer, or the light guide structures may form sidewalls having a ring-shaped horizontal cross section. Metal interconnect structures in the dielectric layer may be arranged in concentric annular structures to form a near-field diffractive element that funnels light towards the appropriate photodiode.

摘要翻译： 可在全局快门模式下操作的图像传感器可以包括图像像素阵列。 每个图像像素可以包括用于检测入射光的光电二极管和用于临时存储电荷的单独的存储二极管。 为了最大化图像像素阵列的效率，图像像素可以包括导光结构和光屏蔽结构。 光导结构可以用于将光从存储节点漏入光电二极管，同时可以在存储节点上形成遮光结构以阻止光进入存储节点。 光导结构可以填充电介质层中的锥形空腔，或者导光结构可形成具有环形水平横截面的侧壁。 电介质层中的金属互连结构可以被布置成同心的环形结构，以形成朝向合适的光电二极管发光的近场衍射元件。