Memory embedded full scan for latent defects

    公开(公告)号:US11280832B1

    公开(公告)日:2022-03-22

    申请号:US17013628

    申请日:2020-09-06

    Applicant: Arm Limited

    Abstract: A memory circuit includes input multiplexers passing one of a pair of input bits. A first input multiplexer receives a first data bit and a serial input bit. Additional input multiplexers receive either a respective pair of data (D) bits, or a write-enable (WEN) bit and a single D bit. Scan latches receive one of the input bits and provide a scan output bit. OR gates arranged receive the scan output bit from a different scan latch, and perform a logical OR operation thereon to generate an OR output bit. Downstream output multiplexers pass a corresponding bit from a bit array or the OR output bit from a corresponding OR gate, and sense latches receive the corresponding bit from one of the output multiplexers and provide a sense output bit. Each sense output bit feeds into one or more input multiplexers when a bit-write-mask function is disabled.

    MEMORY EMBEDDED FULL SCAN FOR LATENT DEFECTS

    公开(公告)号:US20220074988A1

    公开(公告)日:2022-03-10

    申请号:US17013628

    申请日:2020-09-06

    Applicant: Arm Limited

    Abstract: A memory circuit includes input multiplexers passing one of a pair of input bits. A first input multiplexer receives a first data bit and a serial input bit. Additional input multiplexers receive either a respective pair of data (D) bits, or a write-enable (WEN) bit and a single D bit. Scan latches receive one of the input bits and provide a scan output bit. OR gates arranged receive the scan output bit from a different scan latch, and perform a logical OR operation thereon to generate an OR output bit. Downstream output multiplexers pass a corresponding bit from a bit array or the OR output bit from a corresponding OR gate, and sense latches receive the corresponding bit from one of the output multiplexers and provide a sense output bit. Each sense output bit feeds into one or more input multiplexers when a bit-write-mask function is disabled.

    Latch Circuitry for Memory Applications

    公开(公告)号:US20210074353A1

    公开(公告)日:2021-03-11

    申请号:US17101610

    申请日:2020-11-23

    Applicant: Arm Limited

    Abstract: Various implementations described herein are directed to an integrated circuit having first latch circuitry with multiple first latches that latch multiple input data signals. The integrated circuit may include second latch circuitry having a single second latch that receives the latched multiple input data signals from the multiple first latches and outputs a single latched data signal based on the latched multiple input data signals. The integrated circuit may include intermediate logic circuitry that is coupled between the first latch circuitry and the second latch circuitry. The intermediate logic circuitry may receive and combine the multiple input data signals from the first latch circuitry into a single data signal that is provided to the single second latch of the second latch circuitry for output as the single latched data signal.

    Latch Circuitry for Memory Applications
    6.
    发明申请

    公开(公告)号:US20190325947A1

    公开(公告)日:2019-10-24

    申请号:US15956724

    申请日:2018-04-18

    Applicant: Arm Limited

    Abstract: Various implementations described herein are directed to an integrated circuit having first latch circuitry with multiple first latches that latch multiple input data signals. The integrated circuit may include second latch circuitry having a single second latch that receives the latched multiple input data signals from the multiple first latches and outputs a single latched data signal based on the latched multiple input data signals. The integrated circuit may include intermediate logic circuitry that is coupled between the first latch circuitry and the second latch circuitry. The intermediate logic circuitry may receive and combine the multiple input data signals from the first latch circuitry into a single data signal that is provided to the single second latch of the second latch circuitry for output as the single latched data signal.

    Latch circuitry for memory applications

    公开(公告)号:US11568926B2

    公开(公告)日:2023-01-31

    申请号:US17101610

    申请日:2020-11-23

    Applicant: Arm Limited

    Abstract: Various implementations described herein are directed to an integrated circuit having first latch circuitry with multiple first latches that latch multiple input data signals. The integrated circuit may include second latch circuitry having a single second latch that receives the latched multiple input data signals from the multiple first latches and outputs a single latched data signal based on the latched multiple input data signals. The integrated circuit may include intermediate logic circuitry that is coupled between the first latch circuitry and the second latch circuitry. The intermediate logic circuitry may receive and combine the multiple input data signals from the first latch circuitry into a single data signal that is provided to the single second latch of the second latch circuitry for output as the single latched data signal.

    Scan cell for dual port memory applications

    公开(公告)号:US10222418B2

    公开(公告)日:2019-03-05

    申请号:US15368480

    申请日:2016-12-02

    Applicant: ARM Limited

    Abstract: Various implementations described herein are directed to a scan cell. The scan cell may include an input phase having multiple multiplexers and a latch arranged to receive a scan input signal, a first address signal, and a second address signal and provide the scan input signal, the first address signal, or the second address signal based on a scan enable signal, a first clock signal, and a selection enable signal. The scan cell may include an output phase having multiple latches arranged to receive the scan input signal, the first address signal, or the second address signal from the input phase and provide the scan input signal, the first address signal, or the second address signal as a scan output signal based on a second clock signal and a third clock signal.

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