公开(公告)号：USD735655S1

公开(公告)日：2015-08-04

申请号：US29477095

申请日：2013-12-19

申请人： Arnaud Frappart ,  Masayoshi Nomura

设计人： Arnaud Frappart ,  Masayoshi Nomura

公开(公告)号：US09040215B2

公开(公告)日：2015-05-26

申请号：US13753083

申请日：2013-01-29

申请人： Tomoyuki Shimada ,  Masayoshi Nomura ,  Ryota Arai

发明人： Tomoyuki Shimada ,  Masayoshi Nomura ,  Ryota Arai

IPC分类号： G03G15/00 ,  C07C211/54 ,  G03G5/06

CPC分类号： G03G15/751 ,  C07C211/54 ,  G03G5/0614 ,  G03G2215/00957

摘要： To provide an amine compound, represented by General Formula (I) below: [In General Formula (I), R1 and R2 represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted aralkyl group, or a substituted or unsubstituted aromatic hydrocarbon group, which may be identical or different; m and n are an integer of 1 or 0; Ar1 represents a substituted or unsubstituted aromatic hydrocarbon group; Ar2 and Ar3 represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted aralkyl group, or a substituted or unsubstituted aromatic hydrocarbon group; and Ar1 and Ar2 or Ar2 and Ar3 may bind to each other to form a substituted or unsubstituted heterocyclic group including a nitrogen atom.]

摘要翻译： 提供由以下通式（I）表示的胺化合物：[通式（I）中，R 1和R 2表示取代或未取代的烷基，取代或未取代的芳烷基或取代或未取代的芳香族烃基， 其可以相同或不同; m和n是1或0的整数; Ar 1表示取代或未取代的芳香族烃基; Ar 2和Ar 3表示取代或未取代的烷基，取代或未取代的芳烷基或取代或未取代的芳香族烃基; 并且Ar 1和Ar 2或Ar 2和Ar 3可以彼此结合形成取代或未取代的包括氮原子的杂环基。

公开(公告)号：USD658115S1

公开(公告)日：2012-04-24

申请号：US29357775

申请日：2010-03-17

申请人： Masayoshi Nomura ,  Yoshihisa Doui

设计人： Masayoshi Nomura ,  Yoshihisa Doui

公开(公告)号：US20110299353A1

公开(公告)日：2011-12-08

申请号：US13213949

申请日：2011-08-19

申请人： Yutaka Ito ,  Masayoshi Nomura ,  Keiichiro Abe

发明人： Yutaka Ito ,  Masayoshi Nomura ,  Keiichiro Abe

IPC分类号： G11C5/14

CPC分类号： G11C5/14 ,  G11C5/147 ,  G11C5/148 ,  G11C7/20 ,  G11C11/406 ,  G11C11/4072 ,  G11C11/4074 ,  G11C2211/4067 ,  G11C2211/4068

摘要： Some embodiments include a voltage generator to generate a voltage to apply to a line used to access a memory cell of a memory device in which the voltage is applied to the line when the memory cell is not being accessed, and a power controller to cause the voltage to change during a time interval after a refresh operation of the memory device. Other embodiments including additional apparatus, systems, and methods are disclosed.

摘要翻译： 一些实施例包括电压发生器，用于产生电压以施加到用于访问存储器件的存储器单元的线，其中在存储器单元未被访问时将电压施加到线路;以及功率控制器， 电压在存储器件的刷新操作之后的时间间隔期间改变。 公开了包括附加装置，系统和方法的其它实施例。

公开(公告)号：US20110035635A1

公开(公告)日：2011-02-10

申请号：US12906764

申请日：2010-10-18

申请人： Yoshinori Fujiwara ,  Masayoshi Nomura

发明人： Yoshinori Fujiwara ,  Masayoshi Nomura

IPC分类号： G06F11/20

CPC分类号： G11C29/44 ,  G11C29/4401 ,  G11C29/88

摘要： An integrated circuit containing memory includes IEEE 1149.1 (JTAG) controlled self-repair system that permits permanent repair of the memory after the integrated circuit has been packaged. The JTAG controlled self-repair system allows a user to direct circuitry to blow fuses using an externally supplied voltage to electrically couple or isolate components to permanently repair a memory location with JTAG standard TMS and TCK signals. The system may optionally sequentially repair more than one memory location using a repair sequencer.

摘要翻译： 包含存储器的集成电路包括IEEE 1149.1（JTAG）控制的自修复系统，其允许在集成电路被封装之后永久地修复存储器。 JTAG控制的自修复系统允许用户使用外部提供的电压来引导电路熔断熔断器，以电耦合或隔离组件，以使用JTAG标准TMS和TCK信号永久修复存储器位置。 系统可以可选地使用修复定序器顺序修复多于一个的存储器位置。

公开(公告)号：US07721163B2

公开(公告)日：2010-05-18

申请号：US11789367

申请日：2007-04-23

申请人： Yoshinori Fujiwara ,  Masayoshi Nomura

发明人： Yoshinori Fujiwara ,  Masayoshi Nomura

IPC分类号： G11C29/00 ,  G11C17/18 ,  G01R31/28

CPC分类号： G11C29/44 ,  G11C29/4401 ,  G11C29/88

摘要： An integrated circuit containing memory includes IEEE 1149.1 (JTAG) controlled self-repair system that permits permanent repair of the memory after the integrated circuit has been packaged. The JTAG controlled self-repair system allows a user to direct circuitry to blow fuses using an externally supplied voltage to electrically couple or isolate components to permanently repair a memory location with JTAG standard TMS and TCK signals. The system may optionally sequentially repair more than one memory location using a repair sequencer.

摘要翻译： 包含存储器的集成电路包括IEEE 1149.1（JTAG）控制的自修复系统，其允许在集成电路被封装之后永久地修复存储器。 JTAG控制的自修复系统允许用户使用外部提供的电压来引导电路熔断熔断器，以电耦合或隔离组件，以使用JTAG标准TMS和TCK信号永久修复存储器位置。 系统可以可选地使用修复定序器顺序修复多于一个的存储器位置。

公开(公告)号：US4882710A

公开(公告)日：1989-11-21

申请号：US94943

申请日：1987-09-09

申请人： Masashi Hashimoto ,  Sasaki Kenji ,  Masayoshi Nomura

发明人： Masashi Hashimoto ,  Sasaki Kenji ,  Masayoshi Nomura

IPC分类号： G11C11/401 ,  G06F5/10 ,  G11C7/00

CPC分类号： G06F5/10 ,  G11C7/00

摘要： A FIFO memory is provided with individual arrays of dynamic memory cells and includes a dedicated write line buffer memory and a dedicated read line buffer memory operably connected thereto. First and second line buffer memories are also provided in conjunction with the write line buffer memory and the read line buffer memory so as to permit a faster response to the input and output of data with respect to the FIFO memory. Data may be alternately written into either one of the line buffer memories as a lead-in to the subsequent writing of data in the dynamic memory arrays via the write line buffer memory. Data read out from the other line buffer memory may occur simultaneously. The FIFO memory may serve as a video data frame memory for storing a frame of a video screen image. Where video data is continuously written into the FIFO memory, either the preceding video data frame or the current video data frame that is being written is subject to read out depending on the timing of a read reset signal relative to the last write reset signal. The write line buffer memory and the read line buffer memory are operable independently of each other, and may have simultaneous cycle times without any synchronization therebetween. The first and second line buffer memories preferably comprise static type memory elements to facilitate rapid data read out therefrom in response to a read reset signal.

摘要翻译： FIFO存储器具有单独的动态存储器单元阵列，并且包括可操作地连接到其上的专用写行缓冲存储器和专用读行缓冲存储器。 第一和第二行缓冲存储器还与写行缓冲存储器和读行缓冲存储器一起提供，以便允许对FIFO存储器的数据的输入和输出的更快的响应。 可以将数据交替地写入行缓冲存储器中的任何一个作为通过写行缓冲存储器在动态存储器阵列中随后写入数据的导入。 从其他行缓冲存储器读出的数据可能同时发生。 FIFO存储器可以用作存储视频屏幕图像的帧的视频数据帧存储器。 在视频数据被连续地写入FIFO存储器的情况下，根据读取复位信号相对于最后写入复位信号的定时，前面的视频数据帧或正被​​写入的当前视频数据帧被读出。 写行缓冲存储器和读行缓冲存储器可彼此独立地操作，并且可以具有同时的周期时间，而在它们之间没有任何同步。 第一行缓冲存储器和第二行缓冲存储器优选地包括静态型存储器元件，以便响应读取的复位信号便于从其读出数据。

公开(公告)号：US10301424B2

公开(公告)日：2019-05-28

申请号：US15435883

申请日：2017-02-17

申请人： Masayoshi Nomura

发明人： Masayoshi Nomura

IPC分类号： H01M4/60 ,  C08G61/12 ,  H01M10/0525

摘要： Provided is a polythiophene derivative including a repeating unit represented by general formula (1) below. In general formula (1), Z represents a group of atoms forming a 5-through 9-membered heterocycle containing a chalcogen element as a ring member. When the group of atoms contains a plurality of chalcogen elements, the kinds of the chalcogen elements may be the same or different. Ar represents an aromatic ring or aromatic heterocycle that may contain a substituent. n represents a natural number of 2 or greater. m represents 0 or a natural number of 2 or greater.

公开(公告)号：US09991518B2

公开(公告)日：2018-06-05

申请号：US15106562

申请日：2015-01-13

申请人： Masayoshi Nomura

发明人： Masayoshi Nomura

IPC分类号： C08G75/00 ,  H01M4/60 ,  C08G61/12 ,  H01M10/0565 ,  H01M4/02

CPC分类号： H01M4/608 ,  C08G61/126 ,  C08G2261/122 ,  C08G2261/1424 ,  C08G2261/145 ,  C08G2261/312 ,  C08G2261/3223 ,  C08G2261/43 ,  C08G2261/514 ,  H01L51/0036 ,  H01L51/0043 ,  H01M10/0565 ,  H01M2004/028

摘要： A polythiophene derivative including a repeating unit represented by General Formula (1) below: where R1 and R2 each independently denote a group having from 2 through 9 carbon atoms represented by —(R3—S)p—R4 (where R3 denotes an alkylene group having from 1 through 4 carbon atoms, R4 denotes an alkyl group having from 1 through 6 carbon atoms or an aromatic group having from 5 through 6 carbon atoms, and p denotes an integer of 1 or 2), Ar denotes an optionally substituted divalent or monovalent aromatic ring moiety or aromatic heterocyclic moiety, m denotes a natural number of 2 or more, and n denotes a natural number of 0 or 2 or more.

公开(公告)号：US20140234763A1

公开(公告)日：2014-08-21

申请号：US14174279

申请日：2014-02-06

申请人： Akihiro SUGINO ,  Keisuke Shimoyama ,  Tomoharu Asano ,  Hidetoshi Kami ,  Nobutaka Eguchi ,  Kazuhiro Egawa ,  Tomoyuki Shimada ,  Ryota Arai ,  Masayoshi Nomura

发明人： Akihiro SUGINO ,  Keisuke Shimoyama ,  Tomoharu Asano ,  Hidetoshi Kami ,  Nobutaka Eguchi ,  Kazuhiro Egawa ,  Tomoyuki Shimada ,  Ryota Arai ,  Masayoshi Nomura

IPC分类号： G03G15/00 ,  G03G21/18 ,  G03G21/00

CPC分类号： G03G21/0094

摘要： An image forming apparatus includes an image bearing member having a photosensitive layer and a sub-surface layer having a charge transportability, overlying the photosensitive layer wherein the sub-surface layer is formed of a cured material formed of a radical polymerizable monomer having three or more functional groups with no charge transport structure and a radical polymerizable compound having a charge transport structure, wherein the arithmetical mean roughness WRa of about each of frequency components of HMH, HML, and HLH obtained by wavelet conversion of values measured by a surface texture and the contour form measuring device ranges from 0.0002 μm to 0.005 μm and WRa (LLH) is 0.05 μm or less, wherein the sub-surface layer contains at least one of a particular oxazole compound or a particular diamine compound.

摘要翻译： 图像形成装置包括具有感光层和具有电荷传输性的子表面层的图像承载部件，覆盖在感光层上，其中所述子表面层由具有三个或更多个自由基聚合单体形成的固化材料形成 没有电荷传输结构的官能团和具有电荷传输结构的自由基聚合性化合物，其中，通过由表面纹理测量的值通过小波变换获得的大约HMH，HML和HLH的每个频率分量的算术平均粗糙度WRa和 轮廓形状测量装置的范围为0.0002μm至0.005μm，WRa（LLH）为0.05μm以下，其中，所述表面下层含有特定的恶唑化合物或特定的二胺化合物中的至少一种。