USB on-the-go controller
    7.
    发明授权
    USB on-the-go controller 有权
    USB即插即用控制器

    公开(公告)号:US08180947B2

    公开(公告)日:2012-05-15

    申请号:US11230979

    申请日:2005-09-20

    IPC分类号: G06F13/20

    CPC分类号: G06F13/385

    摘要: A USB (Universal Serial Bus) controller technique for implementing OTG (On-The-Go) functionality is provided. The device may have an EHCI (Enhanced Host Controller Interface) compliant host control unit, and an OTG control unit to implement an OTG state machine partly in hardware and partly in software. The OTG control unit may have an OTG control register and an OTG status register which are accessible by software. Further, the USB controller device may have a device control unit to implement device functionality and a port multiplexer to assign a physical port to either the host or the device control unit. The OTG control unit may be comprised in the port multiplexer. Further, a software driver may read the OTG status register in response to receiving an interrupt from the USB controller device, and write to the OTG control register to force the USB controller device to change its OTG state.

    摘要翻译: 提供了一种用于实现OTG(On-The-Go)功能的USB(通用串行总线)控制器技术。 该设备可以具有兼容EHCI(增强型主机控制器接口)的主机控制单元,以及OTG控制单元,部分以硬件部分实现OTG状态机部分软件。 OTG控制单元可以具有可由软件访问的OTG控制寄存器和OTG状态寄存器。 此外,USB控制器设备可以具有实现设备功能的设备控制单元和端口复用器以将物理端口分配给主机或设备控制单元。 OTG控制单元可以包括在端口复用器中。 此外,软件驱动程序可以响应于从USB控制器设备接收中断而读取OTG状态寄存器,并写入OTG控制寄存器以迫使USB控制器设备改变其OTG状态。

    METHOD FOR PREVENTING THE FORMATION OF ELECTRICAL SHORTS VIA CONTACT ILD VOIDS
    8.
    发明申请
    METHOD FOR PREVENTING THE FORMATION OF ELECTRICAL SHORTS VIA CONTACT ILD VOIDS 有权
    用于防止形成电气短路的方法,通过接触ILD VOIDS

    公开(公告)号:US20080265365A1

    公开(公告)日:2008-10-30

    申请号:US11951092

    申请日:2007-12-05

    IPC分类号: H01L29/00 H01L21/762

    摘要: Densely spaced gates of field effect transistors usually lead to voids in a contact interlayer dielectric. If such a void is opened by a contact via and filled with conductive material, an electrical short between neighboring contact regions of neighboring transistors may occur. By forming a recess between two neighboring contact regions, the void forms at a lower level. Thus, opening of the void by contact vias is prevented.

    摘要翻译: 场效应晶体管的密集间隔栅极通常导致接触层间电介质中的空隙。 如果这样的空隙由接触通孔打开并填充有导电材料,则可能发生相邻晶体管的相邻接触区域之间的电短路。 通过在两个相邻的接触区域之间形成凹陷,空隙形成在较低的水平。 因此,防止了通过接触通孔打开空隙。