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1.发明授权Plasma encapsulation for electronic and microelectronic components such as organic light emitting diodes 有权用于诸如有机发光二极管的电子和微电子部件的等离子体封装公开(公告)号：US06933538B2
公开(公告)日：2005-08-23
申请号：US10380145
申请日：2001-08-31
申请人： Arvid Hunze , Rainer Leuschner , Matthias Lipinski , Egon Mergenthaler , Wolfgang Rogler , Georg Wittmann
发明人： Arvid Hunze , Rainer Leuschner , Matthias Lipinski , Egon Mergenthaler , Wolfgang Rogler , Georg Wittmann
IPC分类号： H05B33/04 , C23C16/515 , H01L33/00 , H01L51/50 , H01L51/52 , H05B33/10 , H01L21/48 , H01L29/02
CPC分类号： H01L51/5253
摘要： Plasma encapsulation for electronic and microelectronic components such as OLEDs. The invention relates to a plasma encapsulation for electronic and microelectronic components such as OLEDs. However, a conventional standard plasma coating process is not used; instead, an especially gentle plasma coating process which does not cause any damage to sensitive components such as an OLED is used, such as the pulsed method or the “remote” or “after glow method.”
摘要翻译： 用于诸如OLED的电子和微电子部件的等离子体封装。 本发明涉及用于诸如OLED的电子和微电子组件的等离子体封装。 然而，不使用常规的标准等离子体涂覆工艺; 相反，使用不会对诸如OLED的敏感组件造成任何损害的特别温和的等离子体涂覆方法，例如脉冲方法或“远程”或“辉光法”。
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2.发明授权Method for producing cavities with submicrometer patterns in a semiconductor device using a freezing process liquid 失效在使用冷冻处理液的半导体装置中制造具有亚微米图形的空腔的方法公开(公告)号：US06734095B2
公开(公告)日：2004-05-11
申请号：US10230774
申请日：2002-08-29
IPC分类号： H01L214763
CPC分类号： H01L23/5222 , H01L21/7682 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method for producing cavities, which are patterned in submicrometer dimensions, in a cavity layer of a semiconductor device, is described. In the method, a process liquid is frozen in the trenches in a process layer which has been patterned by ribs and trenches, then the process liquid is covered with a covering layer and is then expelled from the cavities resulting from the covering of the trenches.
摘要翻译： 描述了在半导体器件的空腔层中制造以亚微米尺寸图案化的空腔的方法。 在该方法中，处理液在通过肋和沟槽图案化的处理层中的沟槽中冷冻，然后处理液体被覆盖层覆盖，然后从由沟槽覆盖产生的空腔中排出。
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3.发明授权Semiconductor device configuration with cavities of submicrometer dimensions and method of fabricating structured cavities 失效具有亚微米尺寸空腔的半导体器件配置和制造结构化腔的方法公开(公告)号：US06696315B2
公开(公告)日：2004-02-24
申请号：US10231785
申请日：2002-08-29
IPC分类号： H01L2176
CPC分类号： H01L23/5329 , H01L21/7682 , H01L23/5222 , H01L2924/0002 , H01L2924/00
摘要： Cavities of submicron dimension are in a cavity layer of a semiconductor device. For that purpose, processing material is deposited on ridges of a working layer that is structured from ridges and trenches. The processing material is polymerized and the polymerizing processing material expands over the trenches. Upon covering the trenches, the submicron cavities are formed.
摘要翻译： 亚微米尺寸的凹穴位于半导体器件的腔层中。 为此，处理材料沉积在由脊和沟槽构成的工作层的脊上。 处理材料聚合，聚合处理材料在沟槽上膨胀。 在覆盖沟槽时，形成亚微米腔。
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4.发明授权Semiconductor device having cavities with submicrometer dimensions generated by a swelling process 有权具有通过膨胀过程产生亚微米尺寸的腔的半导体器件公开(公告)号：US06645850B2
公开(公告)日：2003-11-11
申请号：US10230753
申请日：2002-08-29
IPC分类号： H01L214763
CPC分类号： H01L21/7682 , H01L21/31111 , Y10S148/073
摘要： A method creates structured cavities with submicrometer dimensions in a cavity layer of a semiconductor device. A processing material that incorporates a swelling agent is deposited on ridges of a working layer that is constructed of ridges and trenches. The processing material expands over the trenches during swelling; and covered cavities thus emerge from the trenches.
摘要翻译： 一种方法在半导体器件的空腔层中产生具有亚微米尺寸的结构化空腔。 掺有溶胀剂的处理材料沉积在由脊和沟构成的工作层的脊上。 处理材料在膨胀期间在沟槽上膨胀; 并且覆盖的空腔因此从沟槽中出现。
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5.发明授权Method of discharging reaction water in PEM fuel cells and fuel cell for carrying out the method 失效在PEM燃料电池和燃料电池中排出反应水的方法，用于实施该方法公开(公告)号：US06576358B2
公开(公告)日：2003-06-10
申请号：US09822018
申请日：2001-03-30
IPC分类号： H01M804
CPC分类号： H01M8/1004 , H01M8/04156 , H01M8/04291 , H01M2300/0082
摘要： Discharging the reaction water from the novel PEM fuel cells does not require humidification of the reaction gases or an increase in the gas pressure. This is attained in that a hydrophobic layer on the cathode side is used which has a smaller pore size than the layer on the anode side. The reaction water is removed via the anode during the operation of the fuel cell.
摘要翻译： 从新型PEM燃料电池排出反应水不需要加湿反应气体或增加气体压力。 这是通过使用阴极侧的疏水层，其具有比阳极侧的层更小的孔径。 在燃料电池运行期间，反应水通过阳极被去除。
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公开(公告)号：US06503655B1
公开(公告)日：2003-01-07
申请号：US09575058
申请日：2000-05-19
IPC分类号： H01M486
CPC分类号： H01M4/96 , C04B38/0022 , Y10T428/249953 , Y10T428/31728 , Y10T428/31786 , C04B35/52 , C04B38/0045
摘要： A thin, flat, and porous carbon gas diffusion electrode having a side in contact with a supply of gas and a side in contact with an electrolyte, comprises a pyrolysis product of a composite of an organic aerogel or xerogel and a reinforcing skeleton consisting at least in part of organic material. The porosity of the carbon gas diffusion electrode according to the invention can be regulated at will while the surface of the electrode is smooth.
摘要翻译： 具有与气体供应侧和与电解质接触的一侧接触的薄的，平坦且多孔的碳气体扩散电极包括有机气凝胶或干凝胶的复合材料和至少包含的增强骨架的热解产物 部分有机材料。 根据本发明的碳气体扩散电极的孔隙率可以随意调节，同时电极表面光滑。
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7.发明授权Gas diffusion electron, process for producing an electrode an carbonizable composite 失效气体扩散电极，电极和碳化复合材料的制造方法公开(公告)号：US06361666B1
公开(公告)日：2002-03-26
申请号：US09575006
申请日：2000-05-19
IPC分类号： C25B1100
CPC分类号： C04B38/0022 , H01M4/86 , Y10T428/249953 , Y10T428/249961 , Y10T428/249962 , Y10T428/249965 , Y10T428/249994 , Y10T428/31761
摘要： A gas diffusion electrode made of carbon, a process for producing an electrode and a carbonizable composite are provided. Thin, flat, porous gas diffusion electrodes made of carbon, which have a smooth surface and in which the porosity can be regulated at will, are obtained by pyrolysis of a composite of an organic polymer having a spatial globular structure (SGS polymer) and a reinforcing skeleton formed at least in part of organic material.
摘要翻译： 提供由碳制成的气体扩散电极，电极制造方法和可碳化复合体。 通过热分解具有空间球状结构的有机聚合物（SGS聚合物）和（cSS）聚合物）的复合物，可以获得具有光滑表面并且可随意调节孔隙率的碳制成的薄，扁平多孔气体扩散电极 至少部分由有机材料形成的增强骨架。
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公开(公告)号：US08665629B2
公开(公告)日：2014-03-04
申请号：US11864575
申请日：2007-09-28
申请人： Human Park , Ulrich Klostermann , Rainer Leuschner
发明人： Human Park , Ulrich Klostermann , Rainer Leuschner
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , H01L27/2436 , H01L29/66795 , H01L29/785
摘要： An integrated circuit and method for manufacturing an integrated circuit are described. In one embodiment, the integrated circuit includes a memory cell that includes a resistivity changing memory element. The resistivity changing memory element is electrically coupled to a select transistor that includes a FinFET including a source, a drain, and a fin structure formed above a surface of a substrate between the source and the drain. The fin structure includes a channel area extending in a direction substantially parallel to the surface of the substrate, and a dielectric layer formed around at least a portion of the channel area such that an effective channel width of the select transistor depends at least in part on a height of the fin structure.
摘要翻译： 对集成电路的集成电路及其制造方法进行说明。 在一个实施例中，集成电路包括包括电阻率变化存储元件的存储单元。 电阻率变化存储元件电耦合到选择晶体管，该选择晶体管包括在源极和漏极之间形成在衬底表面上方的源极，漏极和鳍状结构的FinFET。 翅片结构包括在基本上平行于衬底的表面的方向上延伸的沟道区，以及围绕沟道区的至少一部分形成的介电层，使得选择晶体管的有效沟道宽度至少部分依赖于 翅片结构的高度。
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公开(公告)号：US20110073987A1
公开(公告)日：2011-03-31
申请号：US12567551
申请日：2009-09-25
申请人： Gunther Mackh , Uwe Seidel , Rainer Leuschner
发明人： Gunther Mackh , Uwe Seidel , Rainer Leuschner
CPC分类号： H01L28/10 , H01L21/76898 , H01L23/481 , H01L23/5227 , H01L23/645 , H01L25/0657 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2924/0002 , H01L2924/00
摘要： Through substrate features in semiconductor substrates are described. In one embodiment, the semiconductor device includes a through substrate via disposed in a first region of a semiconductor substrate. A through substrate conductor coil is disposed in a second region of the semiconductor substrate.
摘要翻译： 描述了半导体衬底中的衬底特征。 在一个实施例中，半导体器件包括设置在半导体衬底的第一区域中的贯穿衬底通孔。 贯穿基板导体线圈设置在半导体基板的第二区域中。
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10.发明授权Integrated circuit, method of manufacturing an integrated circuit, and memory module 有权集成电路，集成电路的制造方法和存储器模块公开(公告)号：US07855435B2
公开(公告)日：2010-12-21
申请号：US12047167
申请日：2008-03-12
IPC分类号： H01L23/48
CPC分类号： H01L43/08 , G11C11/15 , G11C11/1675
摘要： According to one embodiment of the present invention, an integrated circuit including a plurality of memory cells is provided. Each memory cell includes a resistivity changing memory element which includes a top electrode, a bottom electrode, and resistivity changing material being disposed between the top electrode and the bottom electrode. Each resistivity changing memory element is at least partially surrounded by a thermal insulating structure. The thermal insulating structures are arranged such that the dissipation of heat generated within the resistivity changing memory elements into the environment of the resistivity changing memory elements is lowered.
摘要翻译： 根据本发明的一个实施例，提供了包括多个存储单元的集成电路。 每个存储单元包括电阻率变化存储元件，其包括设置在顶部电极和底部电极之间的顶部电极，底部电极和电阻率变化材料。 每个电阻率变化记忆元件至少部分地被绝热结构包围。 热绝缘结构被布置成使得在电阻率变化的存储元件内产生的热量消耗到电阻率变化存储元件的环境中降低。
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