公开(公告)号：US06576358B2

公开(公告)日：2003-06-10

申请号：US09822018

申请日：2001-03-30

申请人： Ulrich Gebhardt ,  Rainer Leuschner ,  Matthias Lipinski ,  Manfred Waidhas

发明人： Ulrich Gebhardt ,  Rainer Leuschner ,  Matthias Lipinski ,  Manfred Waidhas

IPC分类号： H01M804

CPC分类号： H01M8/1004 ,  H01M8/04156 ,  H01M8/04291 ,  H01M2300/0082

摘要： Discharging the reaction water from the novel PEM fuel cells does not require humidification of the reaction gases or an increase in the gas pressure. This is attained in that a hydrophobic layer on the cathode side is used which has a smaller pore size than the layer on the anode side. The reaction water is removed via the anode during the operation of the fuel cell.

摘要翻译： 从新型PEM燃料电池排出反应水不需要加湿反应气体或增加气体压力。 这是通过使用阴极侧的疏水层，其具有比阳极侧的层更小的孔径。 在燃料电池运行期间，反应水通过阳极被去除。

公开(公告)号：US06503655B1

公开(公告)日：2003-01-07

申请号：US09575058

申请日：2000-05-19

申请人： Raino Petricevic ,  Jochen Fricke ,  Rainer Leuschner ,  Matthias Lipinski

发明人： Raino Petricevic ,  Jochen Fricke ,  Rainer Leuschner ,  Matthias Lipinski

IPC分类号： H01M486

CPC分类号： H01M4/96 ,  C04B38/0022 ,  Y10T428/249953 ,  Y10T428/31728 ,  Y10T428/31786 ,  C04B35/52 ,  C04B38/0045

摘要： A thin, flat, and porous carbon gas diffusion electrode having a side in contact with a supply of gas and a side in contact with an electrolyte, comprises a pyrolysis product of a composite of an organic aerogel or xerogel and a reinforcing skeleton consisting at least in part of organic material. The porosity of the carbon gas diffusion electrode according to the invention can be regulated at will while the surface of the electrode is smooth.

摘要翻译： 具有与气体供应侧和与电解质接触的一侧接触的薄的，平坦且多孔的碳气体扩散电极包括有机气凝胶或干凝胶的复合材料和至少包含的增强骨架的热解产物 部分有机材料。 根据本发明的碳气体扩散电极的孔隙率可以随意调节，同时电极表面光滑。

公开(公告)号：US06361666B1

公开(公告)日：2002-03-26

申请号：US09575006

申请日：2000-05-19

申请人： Matthias Lipinski ,  Rainer Leuschner

发明人： Matthias Lipinski ,  Rainer Leuschner

IPC分类号： C25B1100

CPC分类号： C04B38/0022 ,  H01M4/86 ,  Y10T428/249953 ,  Y10T428/249961 ,  Y10T428/249962 ,  Y10T428/249965 ,  Y10T428/249994 ,  Y10T428/31761

摘要： A gas diffusion electrode made of carbon, a process for producing an electrode and a carbonizable composite are provided. Thin, flat, porous gas diffusion electrodes made of carbon, which have a smooth surface and in which the porosity can be regulated at will, are obtained by pyrolysis of a composite of an organic polymer having a spatial globular structure (SGS polymer) and a reinforcing skeleton formed at least in part of organic material.

摘要翻译： 提供由碳制成的气体扩散电极，电极制造方法和可碳化复合体。 通过热分解具有空间球状结构的有机聚合物（SGS聚合物）和（cSS）聚合物）的复合物，可以获得具有光滑表面并且可随意调节孔隙率的碳制成的薄，扁平多孔气体扩散电极 至少部分由有机材料形成的增强骨架。

公开(公告)号：US06933538B2

公开(公告)日：2005-08-23

申请号：US10380145

申请日：2001-08-31

申请人： Arvid Hunze ,  Rainer Leuschner ,  Matthias Lipinski ,  Egon Mergenthaler ,  Wolfgang Rogler ,  Georg Wittmann

发明人： Arvid Hunze ,  Rainer Leuschner ,  Matthias Lipinski ,  Egon Mergenthaler ,  Wolfgang Rogler ,  Georg Wittmann

IPC分类号： H05B33/04 ,  C23C16/515 ,  H01L33/00 ,  H01L51/50 ,  H01L51/52 ,  H05B33/10 ,  H01L21/48 ,  H01L29/02

CPC分类号： H01L51/5253

摘要： Plasma encapsulation for electronic and microelectronic components such as OLEDs. The invention relates to a plasma encapsulation for electronic and microelectronic components such as OLEDs. However, a conventional standard plasma coating process is not used; instead, an especially gentle plasma coating process which does not cause any damage to sensitive components such as an OLED is used, such as the pulsed method or the “remote” or “after glow method.”

摘要翻译： 用于诸如OLED的电子和微电子部件的等离子体封装。 本发明涉及用于诸如OLED的电子和微电子组件的等离子体封装。 然而，不使用常规的标准等离子体涂覆工艺; 相反，使用不会对诸如OLED的敏感组件造成任何损害的特别温和的等离子体涂覆方法，例如脉冲方法或“远程”或“辉光法”。

公开(公告)号：US08665629B2

公开(公告)日：2014-03-04

申请号：US11864575

申请日：2007-09-28

申请人： Human Park ,  Ulrich Klostermann ,  Rainer Leuschner

发明人： Human Park ,  Ulrich Klostermann ,  Rainer Leuschner

IPC分类号： G11C11/00

CPC分类号： H01L27/228 ,  H01L27/2436 ,  H01L29/66795 ,  H01L29/785

摘要： An integrated circuit and method for manufacturing an integrated circuit are described. In one embodiment, the integrated circuit includes a memory cell that includes a resistivity changing memory element. The resistivity changing memory element is electrically coupled to a select transistor that includes a FinFET including a source, a drain, and a fin structure formed above a surface of a substrate between the source and the drain. The fin structure includes a channel area extending in a direction substantially parallel to the surface of the substrate, and a dielectric layer formed around at least a portion of the channel area such that an effective channel width of the select transistor depends at least in part on a height of the fin structure.

摘要翻译： 对集成电路的集成电路及其制造方法进行说明。 在一个实施例中，集成电路包括包括电阻率变化存储元件的存储单元。 电阻率变化存储元件电耦合到选择晶体管，该选择晶体管包括在源极和漏极之间形成在衬底表面上方的源极，漏极和鳍状结构的FinFET。 翅片结构包括在基本上平行于衬底的表面的方向上延伸的沟道区，以及围绕沟道区的至少一部分形成的介电层，使得选择晶体管的有效沟道宽度至少部分依赖于 翅片结构的高度。

公开(公告)号：US20110073987A1

公开(公告)日：2011-03-31

申请号：US12567551

申请日：2009-09-25

申请人： Gunther Mackh ,  Uwe Seidel ,  Rainer Leuschner

发明人： Gunther Mackh ,  Uwe Seidel ,  Rainer Leuschner

IPC分类号： H01L29/66 ,  H01L21/02

CPC分类号： H01L28/10 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5227 ,  H01L23/645 ,  H01L25/0657 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/00

摘要： Through substrate features in semiconductor substrates are described. In one embodiment, the semiconductor device includes a through substrate via disposed in a first region of a semiconductor substrate. A through substrate conductor coil is disposed in a second region of the semiconductor substrate.

摘要翻译： 描述了半导体衬底中的衬底特征。 在一个实施例中，半导体器件包括设置在半导体衬底的第一区域中的贯穿衬底通孔。 贯穿基板导体线圈设置在半导体基板的第二区域中。

公开(公告)号：US07855435B2

公开(公告)日：2010-12-21

申请号：US12047167

申请日：2008-03-12

申请人： Ulrich Klostermann ,  Rainer Leuschner

发明人： Ulrich Klostermann ,  Rainer Leuschner

IPC分类号： H01L23/48

CPC分类号： H01L43/08 ,  G11C11/15 ,  G11C11/1675

摘要： According to one embodiment of the present invention, an integrated circuit including a plurality of memory cells is provided. Each memory cell includes a resistivity changing memory element which includes a top electrode, a bottom electrode, and resistivity changing material being disposed between the top electrode and the bottom electrode. Each resistivity changing memory element is at least partially surrounded by a thermal insulating structure. The thermal insulating structures are arranged such that the dissipation of heat generated within the resistivity changing memory elements into the environment of the resistivity changing memory elements is lowered.

摘要翻译： 根据本发明的一个实施例，提供了包括多个存储单元的集成电路。 每个存储单元包括电阻率变化存储元件，其包括设置在顶部电极和底部电极之间的顶部电极，底部电极和电阻率变化材料。 每个电阻率变化记忆元件至少部分地被绝热结构包围。 热绝缘结构被布置成使得在电阻率变化的存储元件内产生的热量消耗到电阻率变化存储元件的环境中降低。

公开(公告)号：US20090085121A1

公开(公告)日：2009-04-02

申请号：US11864575

申请日：2007-09-28

申请人： Human Park ,  Ulrich Klostermann ,  Rainer Leuschner

发明人： Human Park ,  Ulrich Klostermann ,  Rainer Leuschner

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L27/228 ,  H01L27/2436 ,  H01L29/66795 ,  H01L29/785

摘要： An integrated circuit and method for manufacturing an integrated circuit are described. In one embodiment, the integrated circuit includes a memory cell that includes a resistivity changing memory element. The resistivity changing memory element is electrically coupled to a select transistor that includes a FinFET including a source, a drain, and a fin structure formed above a surface of a substrate between the source and the drain. The fin structure includes a channel area extending in a direction substantially parallel to the surface of the substrate, and a dielectric layer formed around at least a portion of the channel area such that an effective channel width of the select transistor depends at least in part on a height of the fin structure.

摘要翻译： 对集成电路的集成电路及其制造方法进行说明。 在一个实施例中，集成电路包括包括电阻率变化存储元件的存储单元。 电阻率变化存储元件电耦合到选择晶体管，该选择晶体管包括在源极和漏极之间形成在衬底表面上方的源极，漏极和鳍状结构的FinFET。 翅片结构包括在基本上平行于衬底的表面的方向上延伸的沟道区，以及围绕沟道区的至少一部分形成的介电层，使得选择晶体管的有效沟道宽度至少部分依赖于 翅片结构的高度。

公开(公告)号：US20070105241A1

公开(公告)日：2007-05-10

申请号：US11644792

申请日：2006-12-22

申请人： Rainer Leuschner ,  Michael Gaidis ,  Judith Rubino ,  Lubomyr Romankiw

发明人： Rainer Leuschner ,  Michael Gaidis ,  Judith Rubino ,  Lubomyr Romankiw

IPC分类号： H01L21/00 ,  H01L21/8239

CPC分类号： H01L21/76852 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76885 ,  H01L27/228 ,  H01L43/12

摘要： A method of forming a ferromagnetic liner on conductive lines of magnetic memory devices and a structure thereof. The ferromagnetic liner increases the flux concentration of current run through the conductive lines, reducing the amount of write current needed to switch magnetic memory cells. The conductive lines are formed in a plate-up method, and the ferromagnetic liner is selectively formed on the plated conductive lines. The ferromagnetic liner may also be formed over conductive lines and a top portion of vias in a peripheral region of the workpiece.

公开(公告)号：US07122899B2

公开(公告)日：2006-10-17

申请号：US10133336

申请日：2002-04-26

申请人： Bernhard Lippmann ,  Stefan Wallstab ,  Günter Schmid ,  Rainer Leuschner

发明人： Bernhard Lippmann ,  Stefan Wallstab ,  Günter Schmid ,  Rainer Leuschner

IPC分类号： H01L23/45

CPC分类号： H01L23/576 ,  H01L28/20 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/78618 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3011 ,  H01L2924/00

摘要： An ohmic resistance is present between two parts of a conductor layer so that the size of the ohmic resistance can be ascertained and/or a semiconductor region is present in or on a layer forming the dielectric. The conductor layer is structured into a gate contact, a source contact, and a drain contact so that a transistor function or switching function is possible in the semiconductor region. Such a configuration allows an attempt to analyze the circuit integrated in the chip to be detected.