公开(公告)号：US07662668B2

公开(公告)日：2010-02-16

申请号：US11591496

申请日：2006-11-02

申请人： Kazuhiko Sugiura ,  Kenichi Yokoyama ,  Muneo Tamura ,  Tetsuo Fujii ,  Makoto Asai

发明人： Kazuhiko Sugiura ,  Kenichi Yokoyama ,  Muneo Tamura ,  Tetsuo Fujii ,  Makoto Asai

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  B23K26/16 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/6835 ,  H01L21/6836 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2924/3025

摘要： A separating device for separating a semiconductor substrate includes: a cutting element for cutting the semiconductor substrate into a plurality of chips along with a cutting line on the semiconductor substrate; an adsorbing element for adsorbing a dust on a surface of the semiconductor substrate by using electrostatic force; and a static electricity generating element for generating static electricity and for controlling the static electricity in order to remove the dust from the adsorbing element.

摘要翻译： 用于分离半导体衬底的分离装置包括：用于将半导体衬底与半导体衬底上的切割线一起切割成多个芯片的切割元件; 用于通过使用静电力吸附在所述半导体衬底的表面上的灰尘的吸附元件; 以及用于产生静电并用于控制静电以便从吸附元件去除灰尘的静电发生元件。

公开(公告)号：US20070111476A1

公开(公告)日：2007-05-17

申请号：US11591496

申请日：2006-11-02

申请人： Kazuhiko Sugiura ,  Kenichi Yokoyama ,  Muneo Tamura ,  Tetsuo Fujii ,  Makoto Asai

发明人： Kazuhiko Sugiura ,  Kenichi Yokoyama ,  Muneo Tamura ,  Tetsuo Fujii ,  Makoto Asai

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  B23K26/16 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/6835 ,  H01L21/6836 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2924/3025

摘要： A separating device for separating a semiconductor substrate includes: a cutting element for cutting the semiconductor substrate into a plurality of chips along with a cutting line on the semiconductor substrate; an adsorbing element for adsorbing a dust on a surface of the semiconductor substrate by using electrostatic force; and a static electricity generating element for generating static electricity and for controlling the static electricity in order to remove the dust from the adsorbing element.

摘要翻译： 用于分离半导体衬底的分离装置包括：用于将半导体衬底与半导体衬底上的切割线一起切割成多个芯片的切割元件; 用于通过使用静电力吸附在所述半导体衬底的表面上的灰尘的吸附元件; 以及用于产生静电并用于控制静电以便从吸附元件去除灰尘的静电发生元件。

公开(公告)号：US20060220183A1

公开(公告)日：2006-10-05

申请号：US11392739

申请日：2006-03-30

申请人： Makoto Asai ,  Muneo Tamura ,  Kazuhiko Sugiura ,  Tetsuo Fujii

发明人： Makoto Asai ,  Muneo Tamura ,  Kazuhiko Sugiura ,  Tetsuo Fujii

IPC分类号： H01L29/06 ,  H01L21/00

CPC分类号： H01L21/67132 ,  H01L21/78

摘要： A semiconductor wafer includes: a first layer having a first refraction index; a second layer having a second refraction index, which is different from the first refraction index; a plurality of semiconductor elements; and a layer removal region. The semiconductor elements are capable of being separated each other by irradiating a laser beam on the first layer along with a cutting line. The laser beam irradiation provides a modified region in the first layer so that the semiconductor elements are capable of being separated by a crack generated in the modified region. The layer removal region is provided such that the second layer in the layer removal region is removed from the wafer.

摘要翻译： 半导体晶片包括：具有第一折射率的第一层; 具有与第一折射率不同的第二折射率的第二层; 多个半导体元件; 和层去除区域。 半导体元件能够通过与切割线一起照射第一层上的激光束而彼此分离。 激光束照射在第一层中提供改性区域，使得半导体元件能够被改性区域中产生的裂纹分离。 提供了去除层，使得去除层中的第二层从晶片上去除。

公开(公告)号：US20070111478A1

公开(公告)日：2007-05-17

申请号：US11600136

申请日：2006-11-16

申请人： Atsushi Komura ,  Muneo Tamura ,  Kazuhiko Sugiura ,  Hirotsugu Funato ,  Yumi Maruyama ,  Tetsuo Fujii ,  Kenji Kohno

发明人： Atsushi Komura ,  Muneo Tamura ,  Kazuhiko Sugiura ,  Hirotsugu Funato ,  Yumi Maruyama ,  Tetsuo Fujii ,  Kenji Kohno

IPC分类号： H01L21/00

CPC分类号： B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/78

摘要： A method for dicing a semiconductor substrate includes: forming a reforming layer in the substrate by irradiating a laser beam on the substrate; forming a groove on the substrate along with a cutting line; and applying a force to the substrate in order to cutting the substrate at the reforming layer as a starting point of cutting. The groove has a predetermined depth so that the groove is disposed near the reforming layer, and the force provides a stress at the groove.

摘要翻译： 一种用于切割半导体衬底的方法包括：通过在衬底上照射激光束在衬底中形成重整层; 与切割线一起在基板上形成凹槽; 并向基板施加力以切割重整层处的基板作为切割的起点。 槽具有预定的深度，使得槽设置在重整层附近，并且该力在槽处提供应力。

公开(公告)号：US07901967B2

公开(公告)日：2011-03-08

申请号：US11600136

申请日：2006-11-16

申请人： Atsushi Komura ,  Muneo Tamura ,  Kazuhiko Sugiura ,  Hirotsugu Funato ,  Yumi Maruyama ,  Tetsuo Fujii ,  Kenji Kohno

发明人： Atsushi Komura ,  Muneo Tamura ,  Kazuhiko Sugiura ,  Hirotsugu Funato ,  Yumi Maruyama ,  Tetsuo Fujii ,  Kenji Kohno

IPC分类号： H01L21/00

CPC分类号： B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/78

摘要： A method for dicing a semiconductor substrate includes: forming a reforming layer in the substrate by irradiating a laser beam on the substrate; forming a groove on the substrate along with a cutting line; and applying a force to the substrate in order to cutting the substrate at the reforming layer as a starting point of cutting. The groove has a predetermined depth so that the groove is disposed near the reforming layer, and the force provides a stress at the groove.

摘要翻译： 一种用于切割半导体衬底的方法包括：通过在衬底上照射激光束在衬底中形成重整层; 与切割线一起在基板上形成凹槽; 并向基板施加力以切割重整层处的基板作为切割的起点。 槽具有预定的深度，使得槽设置在重整层附近，并且该力在槽处提供应力。

公开(公告)号：US20070111390A1

公开(公告)日：2007-05-17

申请号：US11598654

申请日：2006-11-14

申请人： Atsushi Komura ,  Tetsuo Fujii ,  Muneo Tamura ,  Makoto Asai

发明人： Atsushi Komura ,  Tetsuo Fujii ,  Muneo Tamura ,  Makoto Asai

IPC分类号： H01L21/00 ,  H01L23/02

CPC分类号： H01L21/67132 ,  B23K26/009 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3192 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/00

摘要： A device separated from a wafer includes: a chip having a sidewall, which is provided by a dicing surface of the wafer in a case where the device is separated from the wafer; and a protection member disposed on the sidewall of the chip for protecting the chip from being contaminated by a dust from the dicing surface. In the device, the dicing surface of the wafer is covered with the protection member so that the chip is prevented from contaminated with the dust.

摘要翻译： 与晶片分离的器件包括：具有侧壁的芯片，其在器件与晶片分离的情况下由晶片的切割表面提供; 以及设置在芯片的侧壁上的保护构件，用于保护芯片免受来自切割表面的灰尘的污染。 在该装置中，晶片的切割面被保护部件覆盖，从而防止芯片被灰尘污染。

公开(公告)号：US07838331B2

公开(公告)日：2010-11-23

申请号：US11598654

申请日：2006-11-14

申请人： Atsushi Komura ,  Tetsuo Fujii ,  Muneo Tamura ,  Makoto Asai

发明人： Atsushi Komura ,  Tetsuo Fujii ,  Muneo Tamura ,  Makoto Asai

IPC分类号： H01L21/00

CPC分类号： H01L21/67132 ,  B23K26/009 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3192 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/00

摘要： A device separated from a wafer includes: a chip having a sidewall, which is provided by a dicing surface of the wafer in a case where the device is separated from the wafer; and a protection member disposed on the sidewall of the chip for protecting the chip from being contaminated by a dust from the dicing surface. In the device, the dicing surface of the wafer is covered with the protection member so that the chip is prevented from contaminated with the dust.

摘要翻译： 与晶片分离的器件包括：具有侧壁的芯片，其在器件与晶片分离的情况下由晶片的切割表面提供; 以及设置在芯片的侧壁上的保护构件，用于保护芯片免受来自切割表面的灰尘的污染。 在该装置中，晶片的切割面被保护部件覆盖，从而防止芯片被灰尘污染。

公开(公告)号：US20090261430A1

公开(公告)日：2009-10-22

申请号：US12385848

申请日：2009-04-21

申请人： Shigenori Suzuki ,  Hisanori Yokura ,  Kenichi Yokoyama ,  Tetsuo Fujii ,  Kazuhiko Sugiura

发明人： Shigenori Suzuki ,  Hisanori Yokura ,  Kenichi Yokoyama ,  Tetsuo Fujii ,  Kazuhiko Sugiura

IPC分类号： H01L29/84 ,  H01L21/30

CPC分类号： B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C2203/0118 ,  G01C19/56 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

摘要： A physical quantity sensor includes: a sensor substrate including a first support substrate, a first insulation film and a first semiconductor layer, which are stacked in this order; a cap substrate including a second support substrate disposed on the first semiconductor layer, and has a P conductive type; and multiple electrodes, which are separated from each other. The first support substrate, the first insulation film and the first semiconductor layer have the P conductive type. The physical quantity is detected based on a capacitance between the plurality of electrodes, and the electrodes are disposed in the first semiconductor layer.

摘要翻译： 物理量传感器包括：传感器基板，其包括依次堆叠的第一支撑基板，第一绝缘膜和第一半导体层; 盖基板，包括设置在第一半导体层上的第二支撑基板，并具有P导电型; 以及彼此分离的多个电极。 第一支撑基板，第一绝缘膜和第一半导体层具有P导电型。 基于多个电极之间的电容来检测物理量，并且电极设置在第一半导体层中。

公开(公告)号：US07821085B2

公开(公告)日：2010-10-26

申请号：US12385848

申请日：2009-04-21

申请人： Shigenori Suzuki ,  Hisanori Yokura ,  Kenichi Yokoyama ,  Tetsuo Fujii ,  Kazuhiko Sugiura

发明人： Shigenori Suzuki ,  Hisanori Yokura ,  Kenichi Yokoyama ,  Tetsuo Fujii ,  Kazuhiko Sugiura

IPC分类号： H01L27/14 ,  H01L29/82 ,  H01L29/84

CPC分类号： B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C2203/0118 ,  G01C19/56 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

摘要： A physical quantity sensor includes: a sensor substrate including a first support substrate, a first insulation film and a first semiconductor layer, which are stacked in this order; a cap substrate including a second support substrate disposed on the first semiconductor layer, and has a P conductive type; and multiple electrodes, which are separated from each other. The first support substrate, the first insulation film and the first semiconductor layer have the P conductive type. The physical quantity is detected based on a capacitance between the plurality of electrodes, and the electrodes are disposed in the first semiconductor layer.

摘要翻译： 物理量传感器包括：传感器基板，其包括依次堆叠的第一支撑基板，第一绝缘膜和第一半导体层; 盖基板，包括设置在第一半导体层上的第二支撑基板，并具有P导电型; 以及彼此分离的多个电极。 第一支撑基板，第一绝缘膜和第一半导体层具有P导电型。 基于多个电极之间的电容来检测物理量，并且电极设置在第一半导体层中。

公开(公告)号：US07968432B2

公开(公告)日：2011-06-28

申请号：US11598653

申请日：2006-11-14

申请人： Muneo Tamura ,  Tetsuo Fujii

发明人： Muneo Tamura ,  Tetsuo Fujii

IPC分类号： H01L21/76

CPC分类号： B23K26/0608 ,  B23K26/0617 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50 ,  B28D5/00

摘要： A laser processing apparatus has one laser light source that simultaneously radiates laser beams with two wavelengths. Depth positions of focusing points for laser beams are gradually changed in a wafer. Three sets of modifying region groups, i.e., six layers of modifying region groups, are successively formed. One set of modifying region groups constitutes two layers and is formed at a time. The modifying region groups are separated, adjoined, or overlapped with each other along an estimated cut line of the wafer in a depth direction from a surface thereof.

摘要翻译： 激光加工装置具有同时辐射具有两个波长的激光束的一个激光光源。 激光束聚焦点的深度位置在晶片中逐渐变化。 连续形成3组修饰区域基团，即六层修饰区域基团。 一组修改区域组构成两层，一次形成。 修改区域组沿着晶片的从其表面的深度方向的估计切割线彼此分离，邻接或重叠。