公开(公告)号：US20100003615A1

公开(公告)日：2010-01-07

申请号：US12091712

申请日：2006-10-25

申请人： Atsushi Nakamura ,  Hiroki Makagawa ,  Hiromitsu Nakashima ,  Takayuki Tsuji ,  Hiroshi Dougauchi ,  Daita Kouno ,  Yukio Nishimura

发明人： Atsushi Nakamura ,  Hiroki Makagawa ,  Hiromitsu Nakashima ,  Takayuki Tsuji ,  Hiroshi Dougauchi ,  Daita Kouno ,  Yukio Nishimura

IPC分类号： G03F7/20 ,  G03F7/004

CPC分类号： G03F7/11 ,  C08F220/18 ,  C08F220/30 ,  G03F7/0046 ,  G03F7/2041

摘要： An upper layer-forming composition formed on a photoresist while causing almost no intermixing with the photoresist film and a photoresist patterning method are provided. The upper layer-forming composition is stably maintained without being eluted in a medium such as water during liquid immersion lithography and is easily dissolved in an alkaline developer. The upper layer-forming composition covers a photoresist film for forming a pattern by exposure to radiation. The composition comprises a resin dissolvable in a developer for the photoresist film and a solvent in which the resin is dissolved. The solvent has a viscosity of less than 5.2×10−3 Pa·s at 20° C. In addition, the solvent does not cause intermixing of the photoresist film and the upper layer-forming composition. The solvent contains an ether or a hydrocarbon.

摘要翻译： 提供了形成在光致抗蚀剂上的上层形成组合物，同时几乎不与光致抗蚀剂膜混合，并且提供光致抗蚀剂图案化方法。 上层形成组合物在液浸光刻期间稳定地保持在介质如水中不被洗脱，并容易溶解在碱性显影剂中。 上层形成组合物覆盖用于通过暴露于辐射形成图案的光致抗蚀剂膜。 该组合物包含可溶于光致抗蚀剂膜的显影剂中的树脂和溶解有树脂的溶剂。 溶剂在20℃时的粘度小于5.2×10 -3 Pa.s。此外，溶剂不会引起光致抗蚀剂膜和上层形成组合物的混合。 溶剂含有醚或烃。

公开(公告)号：US08435718B2

公开(公告)日：2013-05-07

申请号：US13272501

申请日：2011-10-13

申请人： Atsushi Nakamura ,  Hiroki Nakagawa ,  Hiromitsu Nakashima ,  Takayuki Tsuji ,  Hiroshi Dougauchi ,  Daita Kouno ,  Yukio Nishimura

发明人： Atsushi Nakamura ,  Hiroki Nakagawa ,  Hiromitsu Nakashima ,  Takayuki Tsuji ,  Hiroshi Dougauchi ,  Daita Kouno ,  Yukio Nishimura

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/11 ,  G03F7/40

CPC分类号： G03F7/11 ,  C08F220/18 ,  C08F220/30 ,  G03F7/0046 ,  G03F7/2041

摘要： An upper layer-forming composition includes a resin, and a solvent. The resin is dissolvable in a developer for a photoresist film which is to be covered by the upper layer-forming composition to form a pattern by exposure to radiation. The solvent dissolves the resin in the solvent. The solvent includes a compound shown by a formula (1). Each of R1 and R2 independently represents a hydrocarbon group having 1 to 8 carbon atoms or a halogenated hydrocarbon group. R1—O—R2  (1)

摘要翻译： 上层形成组合物包括树脂和溶剂。 该树脂可溶于用于由上层形成组合物覆盖以形成通过辐射照射的图案的光致抗蚀剂膜的显影剂。 溶剂溶解在溶剂中的树脂。 溶剂包括由式（1）表示的化合物。 R 1和R 2各自独立地表示碳原子数1〜8的烃基或卤代烃基。 R1-O-R2（1）

公开(公告)号：US20120028198A1

公开(公告)日：2012-02-02

申请号：US13272501

申请日：2011-10-13

申请人： Atsushi NAKAMURA ,  Hiroki Nakagawa ,  Hiromitsu Nakashima ,  Takayuki Tsuji ,  Hiroshi Dougauchi ,  Daita Kouno ,  Yukio Nishimura

发明人： Atsushi NAKAMURA ,  Hiroki Nakagawa ,  Hiromitsu Nakashima ,  Takayuki Tsuji ,  Hiroshi Dougauchi ,  Daita Kouno ,  Yukio Nishimura

IPC分类号： G03F7/20 ,  C08K5/06

CPC分类号： G03F7/11 ,  C08F220/18 ,  C08F220/30 ,  G03F7/0046 ,  G03F7/2041

摘要： An upper layer-forming composition includes a resin, and a solvent. The resin is dissolvable in a developer for a photoresist film which is to be covered by the upper layer-forming composition to form a pattern by exposure to radiation. The solvent dissolves the resin in the solvent. The solvent includes a compound shown by a formula (1). Each of R1 and R2 independently represents a hydrocarbon group having 1 to 8 carbon atoms or a halogenated hydrocarbon group. R1—O—R2  (1)

摘要翻译： 上层形成组合物包括树脂和溶剂。 该树脂可溶于用于通过暴露于辐射形成图案的上层形成组合物覆盖的光致抗蚀剂膜的显影剂中。 溶剂溶解在溶剂中的树脂。 溶剂包括由式（1）表示的化合物。 R 1和R 2各自独立地表示碳原子数1〜8的烃基或卤代烃基。 R1-O-R2（1）

公开(公告)号：US08076053B2

公开(公告)日：2011-12-13

申请号：US12091712

申请日：2006-10-25

申请人： Atsushi Nakamura ,  Hiroki Nakagawa ,  Hiromitsu Nakashima ,  Takayuki Tsuji ,  Hiroshi Dougauchi ,  Daita Kouno ,  Yukio Nishimura

发明人： Atsushi Nakamura ,  Hiroki Nakagawa ,  Hiromitsu Nakashima ,  Takayuki Tsuji ,  Hiroshi Dougauchi ,  Daita Kouno ,  Yukio Nishimura

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/40 ,  G03F7/11

CPC分类号： G03F7/11 ,  C08F220/18 ,  C08F220/30 ,  G03F7/0046 ,  G03F7/2041

摘要： An upper layer-forming composition formed on a photoresist while causing almost no intermixing with the photoresist film and a photoresist patterning method are provided. The upper layer-forming composition is stably maintained without being eluted in a medium such as water during liquid immersion lithography and is easily dissolved in an alkaline developer. The upper layer-forming composition covers a photoresist film for forming a pattern by exposure to radiation. The composition comprises a resin dissolvable in a developer for the photoresist film and a solvent in which the resin is dissolved. The solvent has a viscosity of less than 5.2×10−3 Pa·s at 20° C. In addition, the solvent does not cause intermixing of the photoresist film and the upper layer-forming composition. The solvent contains an ether or a hydrocarbon.

摘要翻译： 提供了形成在光致抗蚀剂上的上层形成组合物，同时几乎不与光致抗蚀剂膜混合，并且提供光致抗蚀剂图案化方法。 上层形成组合物在液浸光刻期间稳定地保持在介质如水中不被洗脱，并容易溶解在碱性显影剂中。 上层形成组合物覆盖用于通过暴露于辐射形成图案的光致抗蚀剂膜。 该组合物包含可溶于光致抗蚀剂膜的显影剂中的树脂和溶解有树脂的溶剂。 溶剂在20℃下的粘度小于5.2×10-3Pa·s。此外，溶剂不会引起光致抗蚀剂膜和上层形成组合物的混合。 溶剂含有醚或烃。

公开(公告)号：US08895229B2

公开(公告)日：2014-11-25

申请号：US12445152

申请日：2007-10-11

申请人： Yukio Nishimura ,  Norihiko Sugie ,  Hiromitsu Nakashima ,  Norihiro Natsume ,  Daita Kouno

发明人： Yukio Nishimura ,  Norihiko Sugie ,  Hiromitsu Nakashima ,  Norihiro Natsume ,  Daita Kouno

IPC分类号： G03F7/20 ,  G03F7/30 ,  G03F7/38 ,  G03F7/11

CPC分类号： G03F7/11 ,  G03F7/2041

摘要： A composition for formation of upper layer film, which is used for forming an upper layer film on the surface of a photoresist film and which comprises a resin (A) having a repeating unit represented by the following general formula (1-1) and not having a repeating unit represented by the following general formula (1-2), and a resin (B) having a repeating unit represented by the following general formula (1-2) and not having a repeating unit represented by the following general formula (1-1). [In the general formulas (1-1) and (1-2), R1 is hydrogen or the like; R2 is single bonds or the like; and R3 is a fluorine-substituted, linear or branched alkyl group having 1 to 12 carbon atoms, or the like.] The composition can form an upper layer film giving a sufficiently high receded contact angle.

摘要翻译： 一种用于形成上层膜的组合物，其用于在光致抗蚀剂膜的表面上形成上层膜，并且其包含具有由以下通式（1-1）表示的重复单元的树脂（A），而不包含 具有由以下通式（1-2）表示的重复单元和具有由以下通式（1-2）表示的重复单元并且不具有由以下通式表示的重复单元的树脂（B） 1-1）。 [通式（1-1）和（1-2）中，R 1为氢等， R2是单键等; R3是具有1〜12个碳原子的氟取代的直链或支链烷基等。]组合物可以形成具有足够高的后退接触角的上层膜。

公开(公告)号：US20100040974A1

公开(公告)日：2010-02-18

申请号：US12442377

申请日：2007-09-21

申请人： Daita Kouno ,  Hiromitsu Nakashima ,  Yukio Nishimura

发明人： Daita Kouno ,  Hiromitsu Nakashima ,  Yukio Nishimura

IPC分类号： G03F7/20 ,  G03F7/004

CPC分类号： G03F7/0397 ,  G03F7/0046 ,  G03F7/095 ,  G03F7/11 ,  G03F7/2041 ,  H01L21/0276

摘要： An upper layer film forming composition for forming an upper layer film on the surface of a photoresist film includes (A) a resin dissolvable in a developer for the photoresist film and (B) a compound having a sulfonic acid residue group, the composition forming an upper layer film with a receding contact angle to water of 70° or more. The upper layer film forming composition of the present invention can form an upper layer film which has a sufficient transparency and is stably maintained without eluting the components into a medium without being intermixed with a photoresist film, can form a resist pattern with high resolution while effectively suppressing a defect, and can suppress a blob defect.

摘要翻译： 在光致抗蚀剂膜的表面上形成上层膜的上层成膜组合物包括（A）可溶于光致抗蚀剂膜的显影剂中的树脂和（B）具有磺酸残基的化合物，该组合物形成 上层膜与水的后退接触角为70°以上。 本发明的上层成膜组合物可以形成具有足够透明度且稳定保持的上层膜，而不将组分洗脱到介质中而不与光致抗蚀剂膜混合，可以有效地形成高分辨率的抗蚀剂图案 抑制缺陷，能够抑制斑点缺陷。

公开(公告)号：US20100021852A1

公开(公告)日：2010-01-28

申请号：US12445152

申请日：2007-10-11

申请人： Yukio Nishimura ,  Norihiko Sugie ,  Hiromitsu Nakashima ,  Norihiro Natsume ,  Daita Kouno

发明人： Yukio Nishimura ,  Norihiko Sugie ,  Hiromitsu Nakashima ,  Norihiro Natsume ,  Daita Kouno

IPC分类号： G03F7/00 ,  C09D133/04

CPC分类号： G03F7/11 ,  G03F7/2041

摘要： A composition for formation of upper layer film, which is used for forming an upper layer film on the surface of a photoresist film and which comprises a resin (A) having a repeating unit represented by the following general formula (1-1) and not having a repeating unit represented by the following general formula (1-2), and a resin (B) having a repeating unit represented by the following general formula (1-2) and not having a repeating unit represented by the following general formula (1-1). [In the general formulas (1-1) and (1-2), R1 is hydrogen or the like; R2 is single bonds or the like; and R3 is a fluorine-substituted, linear or branched alkyl group having 1 to 12 carbon atoms, or the like.] The composition can form an upper layer film giving a sufficiently high receded contact angle.

摘要翻译： 一种用于形成上层膜的组合物，其用于在光致抗蚀剂膜的表面上形成上层膜，并且其包含具有由以下通式（1-1）表示的重复单元的树脂（A），而不包含 具有由以下通式（1-2）表示的重复单元和具有由以下通式（1-2）表示的重复单元并且不具有由以下通式表示的重复单元的树脂（B） 1-1）。 [通式（1-1）和（1-2）中，R 1为氢等， R2是单键等; R3是具有1〜12个碳原子的氟取代的直链或支链烷基等。]组合物可以形成具有足够高的后退接触角的上层膜。

公开(公告)号：US08507189B2

公开(公告)日：2013-08-13

申请号：US12442377

申请日：2007-09-21

申请人： Daita Kouno ,  Hiromitsu Nakashima ,  Yukio Nishimura

发明人： Daita Kouno ,  Hiromitsu Nakashima ,  Yukio Nishimura

IPC分类号： G03F7/11 ,  G03F7/26

CPC分类号： G03F7/0397 ,  G03F7/0046 ,  G03F7/095 ,  G03F7/11 ,  G03F7/2041 ,  H01L21/0276

摘要： An upper layer film forming composition for forming an upper layer film on the surface of a photoresist film includes (A) a resin dissolvable in a developer for the photoresist film and (B) a compound having a sulfonic acid residue group, the composition forming an upper layer film with a receding contact angle to water of 70° or more. The upper layer film forming composition of the present invention can form an upper layer film which has a sufficient transparency and is stably maintained without eluting the components into a medium without being intermixed with a photoresist film, can form a resist pattern with high resolution while effectively suppressing a defect, and can suppress a blob defect.

摘要翻译： 在光致抗蚀剂膜的表面上形成上层膜的上层成膜组合物包括（A）可溶于光致抗蚀剂膜的显影剂中的树脂和（B）具有磺酸残基的化合物，该组合物形成 上层膜与水的后退接触角为70°以上。 本发明的上层成膜组合物可以形成具有足够透明度且稳定保持的上层膜，而不将组分洗脱到介质中而不与光致抗蚀剂膜混合，可以有效地形成高分辨率的抗蚀剂图案 抑制缺陷，能够抑制斑点缺陷。

公开(公告)号：US20100255416A1

公开(公告)日：2010-10-07

申请号：US12680200

申请日：2008-09-10

申请人： Daita Kouno ,  Norihiko Sugie ,  Gouji Wakamatsu ,  Norihiro Natsume ,  Yukio Nishimura ,  Makoto Sugiura

发明人： Daita Kouno ,  Norihiko Sugie ,  Gouji Wakamatsu ,  Norihiro Natsume ,  Yukio Nishimura ,  Makoto Sugiura

IPC分类号： G03F7/20 ,  G03F7/004

CPC分类号： G03F7/11 ,  G03F7/2041

摘要： The object of the invention is to provide a composition for forming an upper layer film for immersion exposure capable of forming an upper layer film effectively inhibited from developing defects through an immersion exposure process, such as a watermark defect and dissolution residue defect. Also provided are an upper layer film for immersion exposure and a method of forming a resist pattern. The composition for forming an upper layer film includes a resin ingredient and a solvent. The resin ingredient includes a resin (A) having at least one kind of repeating units selected among those represented by the formulae (1-1) to (1-3) and at least either of the two kinds of repeating units represented by the formulae (2-1) and (2-2). (1-1) (1-2) (1-3) (2-1) (2-2) [In the formulae, R1 represents hydrogen or methyl; R2 and R3 each represents methylene, linear or branched C2-6 alkylene, or alicyclic C4-12 alkylene; R4 represents hydrogen or methyl; and R5 represents a single bond, methylene, or linear or branched C2-6 alkylene.].

摘要翻译： 本发明的目的是提供一种用于形成用于浸渍曝光的上层膜的组合物，其能够通过诸如水印缺陷和溶解残留缺陷的浸渍曝光工艺有效地防止显影缺陷的形成。 还提供了用于浸渍曝光的上层膜和形成抗蚀剂图案的方法。 用于形成上层膜的组合物包括树脂成分和溶剂。 树脂成分包括具有选自由式（1-1）〜（1-3）表示的重复单元中的至少一种重复单元的树脂（A）和由式 （2-1）和（2-2）。 （1-1）（1-2）（1-3）（2-1）（2-2）[式中，R1表示氢或甲基; R2和R3各自表示亚甲基，直链或支链C 2-6亚烷基或脂环族C 4-12亚烷基; R4代表氢或甲基; 并且R 5表示单键，亚甲基或直链或支链C 2-6亚烷基。

公开(公告)号：US08431332B2

公开(公告)日：2013-04-30

申请号：US12680200

申请日：2008-09-10

申请人： Daita Kouno ,  Norihiko Sugie ,  Gouji Wakamatsu ,  Norihiro Natsume ,  Yukio Nishimura ,  Makoto Sugiura

发明人： Daita Kouno ,  Norihiko Sugie ,  Gouji Wakamatsu ,  Norihiro Natsume ,  Yukio Nishimura ,  Makoto Sugiura

IPC分类号： G03F7/11 ,  G03F7/09 ,  G03F7/38

CPC分类号： G03F7/11 ,  G03F7/2041

摘要： The object of the invention is to provide a composition for forming an upper layer film for immersion exposure capable of forming an upper layer film effectively inhibited from developing defects through an immersion exposure process, such as a watermark defect and dissolution residue defect. Also provided are an upper layer film for immersion exposure and a method of forming a resist pattern. The composition for forming an upper layer film includes a resin ingredient and a solvent. The resin ingredient includes a resin (A) having at least one kind of repeating units selected among those represented by the formulae (1-1) to (1-3) and at least either of the two kinds of repeating units represented by the formulae (2-1) and (2-2). (1-1) (1-2) (1-3) (2-1) (2-2) [In the formulae, R1 represents hydrogen or methyl; R2 and R3 each represents methylene, linear or branched C2-6 alkylene, or alicyclic C4-12 alkylene; R4 represents hydrogen or methyl; and R5 represents a single bond, methylene, or linear or branched C2-6 alkylene.].

摘要翻译： 本发明的目的是提供一种用于形成用于浸渍曝光的上层膜的组合物，其能够通过诸如水印缺陷和溶解残留缺陷的浸渍曝光工艺有效地防止显影缺陷的形成。 还提供了用于浸渍曝光的上层膜和形成抗蚀剂图案的方法。 用于形成上层膜的组合物包括树脂成分和溶剂。 树脂成分包括具有选自由式（1-1）〜（1-3）表示的重复单元中的至少一种重复单元的树脂（A）和由式 （2-1）和（2-2）。 （1-1）（1-2）（1-3）（2-1）（2-2）[式中，R1表示氢或甲基; R2和R3各自表示亚甲基，直链或支链C 2-6亚烷基或脂环族C 4-12亚烷基; R4代表氢或甲基; 并且R 5表示单键，亚甲基或直链或支链C 2-6亚烷基。