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公开(公告)号：US08026048B2
公开(公告)日：2011-09-27
申请号：US12877612
申请日：2010-09-08
CPC分类号： H01L21/67051 , G03F7/3021 , H01L21/6708 , H01L21/6715 , H01L21/6719 , Y10S134/902
摘要： A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.
摘要翻译： 显影剂喷嘴从晶片的周边朝向中心部分移动，同时保持在旋转卡盘处的暴露的基板围绕垂直轴线旋转并且显影液从显影剂喷嘴排出，并且以这种方式，显影液 被提供到晶片的表面，显影剂喷嘴具有狭缝状喷射口，其纵向方向定向为垂直于晶片的径向的方向。 喷嘴的移动速度高于使用具有小直径圆形喷嘴的喷嘴的情况，这使得能够减少显影时间。 此外，可以减少基板上的显影液的厚度，从而可以节省显影液。
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公开(公告)号：US20110127236A1
公开(公告)日：2011-06-02
申请号：US13024939
申请日：2011-02-10
IPC分类号： C23F1/04
CPC分类号： G03F7/3028 , G03F7/3021
摘要： The temperature of a developing solution is varied depending on the type of resist or the resist pattern. The developing solution is applied while scanning a developer nozzle having a slit-shaped ejection port that has a length matching the width of the effective area of the substrate. After leaving the substrate with the developing solution being coated thereon for a predetermined period of time, a diluent is supplied while scanning a diluent nozzle, thereby substantially stopping the development reaction and causing the dissolved resist components to diffuse. A desired amount of resist can be quickly dissolved through the control of the developing solution temperature, while the development can be stopped before the dissolved resist components exhibit adverse effect through the supply of the diluent a predetermined timing, whereby achieving a pattern having a uniform line width and improved throughput.
摘要翻译： 显影液的温度根据抗蚀剂的种类或抗蚀剂图案而变化。 当扫描具有与衬底的有效面积的宽度匹配的长度的狭缝形喷射口的显影剂喷嘴时，施加显影溶液。 在将其上涂覆有显影液的基板离开预定时间后，在扫描稀释剂喷嘴的同时供给稀释剂，从而基本上停止显影反应并使溶解的抗蚀剂组分扩散。 可以通过控制显影液温度来快速溶解所需量的抗蚀剂，同时可以通过在预定时间内提供稀释剂而使溶解的抗蚀剂组分显示出不利影响之前，可以停止显影，从而获得具有均匀线的图案 宽度和提高吞吐量。
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公开(公告)号：US06991385B2
公开(公告)日：2006-01-31
申请号：US10943840
申请日：2004-09-20
申请人： Kousuke Yoshihara , Keiichi Tanaka , Taro Yamamoto , Hideharu Kyouda , Hirofumi Takeguchi , Atsushi Ookouchi
发明人： Kousuke Yoshihara , Keiichi Tanaka , Taro Yamamoto , Hideharu Kyouda , Hirofumi Takeguchi , Atsushi Ookouchi
CPC分类号： H01L21/6715 , G03D3/06 , G03F7/3021
摘要： In a developing processing of a wafer having a resist film low in the dissolving rate in a developing solution formed thereon and subjected to an exposure treatment, a developing solution of a low concentration is supplied first onto a wafer and the wafer is left to stand for a prescribed time to permit a developing reaction to proceed, followed by further supplying a developing solution having a concentration higher than that of the developing solution supplied first onto the wafer, leaving the substrate to stand and subsequently rinsing the wafer, thereby improving the uniformity of the line width in the central portion and the peripheral portion of the wafer.
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公开(公告)号：US07823534B2
公开(公告)日：2010-11-02
申请号：US10584264
申请日：2004-12-24
CPC分类号： H01L21/67051 , G03F7/3021 , H01L21/6708 , H01L21/6715 , H01L21/6719 , Y10S134/902
摘要： A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.
摘要翻译： 显影剂喷嘴从晶片的周边朝向中心部分移动，同时保持在旋转卡盘处的暴露的基板围绕垂直轴线旋转并且显影液从显影剂喷嘴排出，并且以这种方式，显影液 被提供到晶片的表面，显影剂喷嘴具有狭缝状喷射口，其纵向方向定向为垂直于晶片的径向的方向。 喷嘴的移动速度高于使用具有小直径圆形喷嘴的喷嘴的情况，这使得能够减少显影时间。 此外，可以减少基板上的显影液的厚度，从而可以节省显影液。
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5.发明申请公开(公告)号：US20050053874A1
公开(公告)日：2005-03-10
申请号：US10943840
申请日：2004-09-20
申请人： Kousuke Yoshihara , Keiichi Tanaka , Taro Yamamoto , Hideharu Kyouda , Hirofumi Takeguchi , Atsushi Ookouchi
发明人： Kousuke Yoshihara , Keiichi Tanaka , Taro Yamamoto , Hideharu Kyouda , Hirofumi Takeguchi , Atsushi Ookouchi
IPC分类号： G03D3/06 , G03F7/30 , H01L21/00 , H01L21/027 , G03C5/18
CPC分类号： H01L21/6715 , G03D3/06 , G03F7/3021
摘要： In a developing processing of a wafer having a resist film low in the dissolving rate in a developing solution formed thereon and subjected to an exposure treatment, a developing solution of a low concentration is supplied first onto a wafer and the wafer is left to stand for a prescribed time to permit a developing reaction to proceed, followed by further supplying a developing solution having a concentration higher than that of the developing solution supplied first onto the wafer, leaving the substrate to stand and subsequently rinsing the wafer, thereby improving the uniformity of the line width in the central portion and the peripheral portion of the wafer.
摘要翻译： 在其上形成的显影液中的溶解速度低的抗蚀剂膜的显影处理中，首先将低浓度的显影液供给到晶片上，并将晶片放置在 规定的时间以允许显影反应进行，然后进一步提供浓度高于首先提供的显影溶液的显影溶液的显影溶液到晶片上，使基板静置并随后冲洗晶片，由此提高均匀性 晶片的中心部分和周边部分的线宽度。
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公开(公告)号：US20090130614A1
公开(公告)日：2009-05-21
申请号：US10584264
申请日：2004-12-24
CPC分类号： H01L21/67051 , G03F7/3021 , H01L21/6708 , H01L21/6715 , H01L21/6719 , Y10S134/902
摘要： A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.
摘要翻译： 显影剂喷嘴从晶片的周边朝向中心部分移动，同时保持在旋转卡盘处的暴露的基板围绕垂直轴线旋转并且显影液从显影剂喷嘴排出，并且以这种方式，显影液 被提供到晶片的表面，显影剂喷嘴具有狭缝状喷射口，其纵向方向定向为垂直于晶片的径向的方向。 喷嘴的移动速度高于使用具有小直径圆形喷嘴的喷嘴的情况，这使得能够减少显影时间。 此外，可以减少基板上的显影液的厚度，从而可以节省显影液。
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7.发明授权公开(公告)号：US06811962B2
公开(公告)日：2004-11-02
申请号：US10227814
申请日：2002-08-27
申请人： Kousuke Yoshihara , Keiichi Tanaka , Taro Yamamoto , Hideharu Kyouda , Hirofumi Takeguchi , Atsushi Ookouchi
发明人： Kousuke Yoshihara , Keiichi Tanaka , Taro Yamamoto , Hideharu Kyouda , Hirofumi Takeguchi , Atsushi Ookouchi
IPC分类号： G03F730
CPC分类号： H01L21/6715 , G03D3/06 , G03F7/3021
摘要： In a developing processing of a wafer having a resist film low in the dissolving rate in a developing solution formed thereon and subjected to an exposure treatment, a developing solution of a low concentration is supplied first onto a wafer and the wafer is left to stand for a prescribed time to permit a developing reaction to proceed, followed by further supplying a developing solution having a concentration higher than that of the developing solution supplied first onto the wafer, leaving the substrate to stand and subsequently rinsing the wafer, thereby improving the uniformity of the line width in the central portion and the peripheral portion of the wafer.
摘要翻译： 在其上形成的显影液中的溶解速度低的抗蚀剂膜的显影处理中，首先将低浓度的显影液供给到晶片上，并将晶片放置在 规定的时间以允许显影反应进行，然后进一步提供浓度高于首先提供的显影溶液的显影溶液的显影溶液到晶片上，使基板静置并随后冲洗晶片，由此提高均匀性 晶片的中心部分和周边部分的线宽度。
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公开(公告)号：US08445189B2
公开(公告)日：2013-05-21
申请号：US13024939
申请日：2011-02-10
CPC分类号： G03F7/3028 , G03F7/3021
摘要： The temperature of a developing solution is varied depending on the type of resist or the resist pattern. The developing solution is applied while scanning a developer nozzle having a slit-shaped ejection port that has a length matching the width of the effective area of the substrate. After leaving the substrate with the developing solution being coated thereon for a predetermined period of time, a diluent is supplied while scanning a diluent nozzle, thereby substantially stopping the development reaction and causing the dissolved resist components to diffuse. A desired amount of resist can be quickly dissolved through the control of the developing solution temperature, while the development can be stopped before the dissolved resist components exhibit adverse effect through the supply of the diluent a predetermined timing, whereby achieving a pattern having a uniform line width and improved throughput.
摘要翻译： 显影液的温度根据抗蚀剂的种类或抗蚀剂图案而变化。 当扫描具有与衬底的有效面积的宽度匹配的长度的狭缝形喷射口的显影剂喷嘴时，施加显影溶液。 在将其上涂覆有显影液的基板离开预定时间后，在扫描稀释剂喷嘴的同时供给稀释剂，从而基本上停止显影反应并使溶解的抗蚀剂组分扩散。 可以通过控制显影液温度来快速溶解所需量的抗蚀剂，同时可以通过在预定时间内提供稀释剂而使溶解的抗蚀剂组分显示出不利影响之前，可以停止显影，从而获得具有均匀线的图案 宽度和提高吞吐量。
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公开(公告)号：US07918182B2
公开(公告)日：2011-04-05
申请号：US10584265
申请日：2004-12-24
IPC分类号： B05C11/10
CPC分类号： G03F7/3028 , G03F7/3021
摘要： The temperature of a developing solution is varied depending on the type of resist or the resist pattern. The developing solution is applied while scanning a developer nozzle having a slit-shaped ejection port that has a length matching the width of the effective area of the substrate. After leaving the substrate with the developing solution being coated thereon for a predetermined period of time, a diluent is supplied while scanning a diluent nozzle, thereby substantially stopping the development reaction and causing the dissolved resist components to diffuse. A desired amount of resist can be quickly dissolved through the control of the developing solution temperature, while the development can be stopped before the dissolved resist components exhibit adverse effect through the supply of the diluent a predetermined timing, whereby achieving a pattern having a uniform line width and improved throughput.
摘要翻译： 显影液的温度根据抗蚀剂的种类或抗蚀剂图案而变化。 当扫描具有与衬底的有效面积的宽度匹配的长度的狭缝形喷射口的显影剂喷嘴时，施加显影溶液。 在将其上涂覆有显影液的基板离开预定时间后，在扫描稀释剂喷嘴的同时供给稀释剂，从而基本上停止显影反应并使溶解的抗蚀剂组分扩散。 可以通过控制显影液温度来快速溶解所需量的抗蚀剂，同时可以通过在预定时间内提供稀释剂而使溶解的抗蚀剂组分显示出不利影响之前，可以停止显影，从而实现具有均匀线的图案 宽度和提高吞吐量。
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公开(公告)号：US20070184178A1
公开(公告)日：2007-08-09
申请号：US10584265
申请日：2004-12-24
CPC分类号： G03F7/3028 , G03F7/3021
摘要： The temperature of a developing solution is varied depending on the type of resist or the resist pattern. The developing solution is applied while scanning a developer nozzle having a slit-shaped ejection port that has a length matching the width of the effective area of the substrate. After leaving the substrate with the developing solution being coated thereon for a predetermined period of time, a diluent is supplied while scanning a diluent nozzle, thereby substantially stopping the development reaction and causing the dissolved resist components to diffuse. A desired amount of resist can be quickly dissolved through the control of the developing solution temperature, while the development can be stopped before the dissolved resist components exhibit adverse effect through the supply of the diluent a predetermined timing, whereby achieving a pattern having a uniform line width and improved throughput.
摘要翻译： 显影液的温度根据抗蚀剂的种类或抗蚀剂图案而变化。 当扫描具有与衬底的有效面积的宽度匹配的长度的狭缝形喷射口的显影剂喷嘴时，施加显影溶液。 在将其上涂覆有显影液的基板离开预定时间后，在扫描稀释剂喷嘴的同时供给稀释剂，从而基本上停止显影反应并使溶解的抗蚀剂组分扩散。 可以通过控制显影液温度来快速溶解所需量的抗蚀剂，同时可以通过在预定时间内提供稀释剂而使溶解的抗蚀剂组分显示出不利影响之前，可以停止显影，从而获得具有均匀线的图案 宽度和提高吞吐量。
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