公开(公告)号：US20220376150A1

公开(公告)日：2022-11-24

申请号：US17519556

申请日：2021-11-04

Applicant: Au Optronics Corporation

Inventor： Hsun-Yi Wang ,  Chan-Jui Liu ,  Chiao-Li Huang ,  Ching-Liang Huang ,  Chun-Cheng Cheng

IPC: H01L33/60 ,  H01L25/075 ,  H01L33/00 ,  H01L33/62 ,  G06F3/044 ,  G06F3/041

Abstract: A display panel including a pixel circuit substrate, a planarization layer, a plurality of bonding pads, a plurality of light-emitting devices, a plurality of auxiliary electrodes, and a reflective structure layer is provided. The pixel circuit substrate has a plurality of signal lines. The planarization layer covers the signal lines. The bonding pads are disposed on the planarization layer and are electrically connected to the signal lines. The light-emitting devices are electrically bonded to the bonding pads. The auxiliary electrodes are disposed between the bonding pads. The reflective structure layer is disposed between the light-emitting devices and overlaps at least part of the auxiliary electrodes and the bonding pads. A method of fabricating the display panel is also provided.

公开(公告)号：US20210343526A1

公开(公告)日：2021-11-04

申请号：US17375012

申请日：2021-07-14

Applicant: Au Optronics Corporation

Inventor： Jia-Hong Ye ,  Ching-Liang Huang

IPC: H01L21/02 ,  C23C28/04 ,  H01L27/12

Abstract: A manufacturing method of a crystallized metal oxide layer includes: providing a substrate; forming a first insulation layer on the substrate; forming a first metal oxide layer on the first insulation layer; forming a second metal oxide layer on the first insulation layer; forming a second insulation layer on the first metal oxide layer and the second metal oxide layer; forming a silicon layer on the second insulation layer; performing a first laser process on a portion of the silicon layer covering the first metal oxide layer; and performing a second laser process on a portion of the silicon layer covering the second metal oxide layer. An active device and a manufacturing method thereof are also provided.

公开(公告)号：US11094540B2

公开(公告)日：2021-08-17

申请号：US16368891

申请日：2019-03-29

Applicant: Au Optronics Corporation

Inventor： Jia-Hong Ye ,  Ching-Liang Huang

IPC: H01L21/02 ,  C23C28/04 ,  H01L27/12 ,  C23C16/24 ,  C23C16/40 ,  C23C16/56 ,  H01L29/786

Abstract: A manufacturing method of a crystallized metal oxide layer includes: providing a substrate; forming a first insulation layer on the substrate; forming a first metal oxide layer on the first insulation layer; forming a second metal oxide layer on the first insulation layer; forming a second insulation layer on the first metal oxide layer and the second metal oxide layer; forming a silicon layer on the second insulation layer; performing a first laser process on a portion of the silicon layer covering the first metal oxide layer; and performing a second laser process on a portion of the silicon layer covering the second metal oxide layer. An active device and a manufacturing method thereof are also provided.

公开(公告)号：US20190304779A1

公开(公告)日：2019-10-03

申请号：US16368891

申请日：2019-03-29

Applicant: Au Optronics Corporation

Inventor： Jia-Hong Ye ,  Ching-Liang Huang

IPC: H01L21/02 ,  H01L27/12 ,  C23C28/04

Abstract: A manufacturing method of a crystallized metal oxide layer includes: providing a substrate; forming a first insulation layer on the substrate; forming a first metal oxide layer on the first insulation layer; forming a second metal oxide layer on the first insulation layer; forming a second insulation layer on the first metal oxide layer and the second metal oxide layer; forming a silicon layer on the second insulation layer; performing a first laser process on a portion of the silicon layer covering the first metal oxide layer; and performing a second laser process on a portion of the silicon layer covering the second metal oxide layer. An active device and a manufacturing method thereof are also provided.

公开(公告)号：US11545605B2

公开(公告)日：2023-01-03

申请号：US17519556

申请日：2021-11-04

Applicant: Au Optronics Corporation

Inventor： Hsun-Yi Wang ,  Chan-Jui Liu ,  Chiao-Li Huang ,  Ching-Liang Huang ,  Chun-Cheng Cheng

IPC: H01L33/60 ,  H01L25/075 ,  H01L33/00 ,  G06F3/044 ,  G06F3/041 ,  H01L33/62

Abstract: A display panel including a pixel circuit substrate, a planarization layer, a plurality of bonding pads, a plurality of light-emitting devices, a plurality of auxiliary electrodes, and a reflective structure layer is provided. The pixel circuit substrate has a plurality of signal lines. The planarization layer covers the signal lines. The bonding pads are disposed on the planarization layer and are electrically connected to the signal lines. The light-emitting devices are electrically bonded to the bonding pads. The auxiliary electrodes are disposed between the bonding pads. The reflective structure layer is disposed between the light-emitting devices and overlaps at least part of the auxiliary electrodes and the bonding pads. A method of fabricating the display panel is also provided.

公开(公告)号：US10566357B2

公开(公告)日：2020-02-18

申请号：US15837996

申请日：2017-12-11

Applicant: AU OPTRONICS CORPORATION

Inventor： Jia-Hong Ye ,  Ching-Liang Huang

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/04 ,  H01L21/02 ,  H01L29/66

Abstract: The present invention provides a method for crystallizing a metal oxide semiconductor layer, a semiconductor structure, a method for manufacturing a semiconductor structure, an active array substrate, and an indium gallium zinc oxide crystal. The crystallization method includes the following steps: forming an amorphous metal oxide semiconductor layer on a substrate; forming an oxide layer on the amorphous metal oxide semiconductor layer; forming an amorphous silicon layer on the oxide layer; and irradiating the amorphous silicon layer by using a laser, so as to heat the amorphous silicon layer, where the heated amorphous silicon layer heats the amorphous metal oxide semiconductor layer, so that the amorphous metal oxide semiconductor layer is converted into a crystallized metal oxide semiconductor layer.