公开(公告)号：US20230234055A1

公开(公告)日：2023-07-27

申请号：US17750399

申请日：2022-05-23

Applicant: Au Optronics Corporation

Inventor： Shih-Hua Hsu ,  Wei-Han Chen ,  Ching-Wen Chen ,  Ying-Hui Lai

IPC: B01L3/00 ,  B03C5/02

CPC classification number: B01L3/502761 ,  B03C5/026 ,  B01L3/502707 ,  B01L2200/0668 ,  B01L2300/12 ,  B01L2400/0454

Abstract: An optoelectronic tweezer device includes a transparent substrate, a semiconductor layer, a first electrode and a dielectric layer. The semiconductor layer is located above the transparent substrate and includes a first doping region, a second doping region and a transition region, wherein the transition region is located between the first doping region and the second doping region. The first electrode is located on the first doping region and is electrically connected to the first doping region. The dielectric layer is located above the semiconductor layer and has a first through hole overlapping the first electrode.

公开(公告)号：US09990530B2

公开(公告)日：2018-06-05

申请号：US15254164

申请日：2016-09-01

Applicant: AU OPTRONICS CORPORATION

Inventor： Hao-Lun Hsieh ,  Ching-Wen Chen ,  Rong-Ann Lin ,  Ming-I Huang ,  Chun Chang

IPC: G06K9/00 ,  H01L29/868 ,  H01L51/52 ,  H01L27/32 ,  H01L51/50 ,  H01L25/16 ,  H01L29/872

CPC classification number: G06K9/0004 ,  H01L25/167 ,  H01L27/3234 ,  H01L29/868 ,  H01L29/872 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5281

Abstract: A fingerprint sensing device includes a plurality of sensing units. Each sensing unit includes: a readout element, a photosensitive element, a light emitting element and a diode. The photosensitive element is electrically connected to the readout element. The light emitting element is disposed corresponding to the photosensitive element, and includes a first anode, a first cathode, and a light emitting layer located between the first anode and the first cathode. The diode includes a second anode and a second cathode, and a semiconductor layer located between the second anode and the second cathode. The second anode is electrically connected to the first cathode of the light emitting element, and the second cathode is electrically connected to the first anode of the light emitting element.

公开(公告)号：US09773914B2

公开(公告)日：2017-09-26

申请号：US15158042

申请日：2016-05-18

Applicant: AU Optronics Corporation

Inventor： Ching-Wen Chen ,  An-Thung Cho

IPC: H01L27/32 ,  H01L29/786 ,  H01L27/12 ,  H01L21/027 ,  H01L31/09 ,  H01L31/18 ,  H01L29/66

CPC classification number: H01L29/78651 ,  H01L21/0274 ,  H01L27/124 ,  H01L27/3227 ,  H01L29/66765 ,  H01L31/09 ,  H01L31/18

Abstract: An optical sensing device includes a thin film transistor disposed on a substrate, an optical sensor, a planar layer, and an organic light emitting diode. The optical sensor includes a metal electrode disposed on a gate dielectric layer of the thin film transistor and connecting to a drain electrode of the thin film transistor, an optical sensing layer disposed on the metal electrode, and a first transparent electrode disposed on the optical sensing layer. The planar layer covers at least a part of the thin film transistor and the optical sensor. The organic light emitting diode is disposed on the planar layer. The anode electrode and the cathode electrode of the organic light emitting diode are electrically coupled to a gate line and a data line respectively.

公开(公告)号：US20220157911A1

公开(公告)日：2022-05-19

申请号：US17364877

申请日：2021-06-30

Applicant: Au Optronics Corporation

Inventor： Shuo-Yang Sun ,  Shih-Hua Hsu ,  Ching-Wen Chen ,  Ying-Hui Lai

IPC: H01L27/32 ,  H01L51/05

Abstract: A semiconductor device is disposed and includes a substrate, on which a scan line, a data line, a source electrode, a drain electrode, an organic semiconductor pattern, an organic insulating layer, a gate electrode, and an organic protection layer are disposed. The source electrode is electrically connected to the data line. The organic semiconductor pattern is disposed between the source electrode and the drain electrode. The organic insulating layer is disposed on an upper surface and a side surface of the organic semiconductor pattern. The organic insulating layer is at least disposed between the side surface of the organic semiconductor pattern and the gate electrode and disposed between the upper surface of the organic semiconductor pattern and the gate electrode. The gate electrode is electrically connected to the scan line. The organic protection layer covers the gate electrode.

公开(公告)号：US11882733B2

公开(公告)日：2024-01-23

申请号：US17364896

申请日：2021-07-01

Applicant: Au Optronics Corporation

Inventor： Shuo-Yang Sun ,  Shih-Hua Hsu ,  Ching-Wen Chen ,  Ying-Hui Lai

IPC: H10K59/125 ,  H10K10/46 ,  H10K59/131

CPC classification number: H10K59/125 ,  H10K10/464 ,  H10K59/131

Abstract: An organic semiconductor substrate includes a base, a first conductive pattern, a second conductive pattern, a first metal oxide pattern, a second metal oxide pattern, an organic flat pattern layer, a source, a drain, an organic semiconductor pattern, an organic gate insulating layer, and a gate. The first conductive pattern and the second conductive pattern are disposed on the base and separated from each other. The first metal oxide pattern and the second metal oxide pattern respectively cover and are electrically connected to the first conductive pattern and the second conductive pattern, respectively. A first portion of the organic flat pattern layer is disposed between the first metal oxide pattern and the second metal oxide pattern. A surface of the first metal oxide pattern has a first distance from the base. A surface of the first portion of the organic flat pattern layer has a second distance from the base. The second distance is less than or equal to the first distance.

公开(公告)号：US20220238621A1

公开(公告)日：2022-07-28

申请号：US17364896

申请日：2021-07-01

Applicant: Au Optronics Corporation

Inventor： Shuo-Yang Sun ,  Shih-Hua Hsu ,  Ching-Wen Chen ,  Ying-Hui Lai

IPC: H01L27/32 ,  H01L51/05

Abstract: An organic semiconductor substrate includes a base, a first conductive pattern, a second conductive pattern, a first metal oxide pattern, a second metal oxide pattern, an organic flat pattern layer, a source, a drain, an organic semiconductor pattern, an organic gate insulating layer, and a gate. The first conductive pattern and the second conductive pattern are disposed on the base and separated from each other. The first metal oxide pattern and the second metal oxide pattern respectively cover and are electrically connected to the first conductive pattern and the second conductive pattern, respectively. A first portion of the organic flat pattern layer is disposed between the first metal oxide pattern and the second metal oxide pattern. A surface of the first metal oxide pattern has a first distance from the base. A surface of the first portion of the organic flat pattern layer has a second distance from the base. The second distance is less than or equal to the first distance.