公开(公告)号：US20140034951A1

公开(公告)日：2014-02-06

申请号：US14049194

申请日：2013-10-08

Applicant: Au Optronics Corporation

Inventor： An-Thung Cho ,  Wan-Yi Liu ,  Chia-Kai Chen ,  Wu-Hsiung Lin ,  Chun-Hsiun Chen ,  Wei-Ming Huang

IPC: H01L29/786

CPC classification number: H01L29/78651 ,  H01L21/02532 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02686 ,  H01L29/66068 ,  H01L29/66969 ,  H01L29/78684 ,  H01L29/7869

Abstract: A thin film transistor disposed on a substrate is provided. The thin film transistor includes a gate, a gate insulating layer, a silicon-rich channel layer, a source, and a drain. The gate is disposed on the substrate. The gate insulator is disposed over the gate. The silicon-rich channel layer is disposed above the gate, wherein the material of the silicon-rich channel layer is selected from a group consisting of silicon-rich silicon oxide (Si-rich SiOx), silicon-rich silicon nitride (Si-rich SiNx), silicon-rich silicon oxynitride (Si-rich SiOxNy), silicon-rich silicon carbide (Si-rich SiC) and silicon-rich silicon oxycarbide (Si-rich SiOC). The content (concentration) of silicon of the silicon-rich channel layer within a film depth between 10 nm to 170 nm ranges from about 1E23 atoms/cm3 to about 4E23 atoms/cm3. The source and the drain are connected with the silicon-rich channel layer.

Abstract translation: 设置在基板上的薄膜晶体管。 薄膜晶体管包括栅极，栅极绝缘层，富硅沟道层，源极和漏极。 栅极设置在基板上。 栅极绝缘体设置在栅极上。 富硅沟道层设置在栅极上方，其中富硅沟道层的材料选自富硅氧化硅（富Si），富含硅的氮化硅（富Si） SiN x），富硅氧氮化硅（富Si的SiO x N y），富含硅的碳化硅（富Si的SiC）和富硅的碳氧化碳（富Si的SiOC）。 在10nm至170nm的膜深度内的富硅沟道层的硅含量（浓度）范围为约1E23原子/ cm3至约4E23原子/ cm3。 源极和漏极与富硅沟道层连接。

公开(公告)号：US08748896B2

公开(公告)日：2014-06-10

申请号：US14049194

申请日：2013-10-08

Applicant: Au Optronics Corporation

Inventor： An-Thung Cho ,  Wan-Yi Liu ,  Chia-Kai Chen ,  Wu-Hsiung Lin ,  Chun-Hsiun Chen ,  Wei-Ming Huang

IPC: H01L29/04 ,  H01L29/10 ,  H01L31/00

CPC classification number: H01L29/78651 ,  H01L21/02532 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02686 ,  H01L29/66068 ,  H01L29/66969 ,  H01L29/78684 ,  H01L29/7869

Abstract: A thin film transistor disposed on a substrate is provided. The thin film transistor includes a gate, a gate insulating layer, a silicon-rich channel layer, a source, and a drain. The gate is disposed on the substrate. The gate insulator is disposed over the gate. The silicon-rich channel layer is disposed above the gate, wherein the material of the silicon-rich channel layer is selected from a group consisting of silicon-rich silicon oxide (Si-rich SiOx), silicon-rich silicon nitride (Si-rich SiNx), silicon-rich silicon oxynitride (Si-rich SiOxNy), silicon-rich silicon carbide (Si-rich SiC) and silicon-rich silicon oxycarbide (Si-rich SiOC). The content (concentration) of silicon of the silicon-rich channel layer within a film depth between 10 nm to 170 nm ranges from about 1E23 atoms/cm3 to about 4E23 atoms/cm3. The source and the drain are connected with the silicon-rich channel layer.

Abstract translation: 设置在基板上的薄膜晶体管。 薄膜晶体管包括栅极，栅极绝缘层，富硅沟道层，源极和漏极。 栅极设置在基板上。 栅极绝缘体设置在栅极上。 富硅沟道层设置在栅极上方，其中富硅沟道层的材料选自富硅氧化硅（富Si），富含硅的氮化硅（富Si） SiN x），富硅氧氮化硅（富Si的SiO x N y），富含硅的碳化硅（富Si的SiC）和富硅的碳氧化碳（富Si的SiOC）。 在10nm至170nm的膜深度内的富硅沟道层的硅含量（浓度）范围为约1E23原子/ cm3至约4E23原子/ cm3。 源极和漏极与富硅沟道层连接。