公开(公告)号：US09001281B2

公开(公告)日：2015-04-07

申请号：US13658826

申请日：2012-10-24

Applicant: Au Optronics Corporation

Inventor： Hsiang-Lin Lin ,  An-Thung Cho ,  Chih-Jen Hu ,  Wei-Ming Huang

IPC: G02F1/1335 ,  G02F1/135 ,  H01J9/24

CPC classification number: G02F1/135 ,  H01J9/24

Abstract: A touch-sensing display panel including a front substrate, scan lines, data lines, pixel structures, photo-sensors, readout devices, a rear substrate and a display medium is provided. The front substrate has an inner surface. The scan lines and the data lines are on the inner surface of the front substrate and intersected to each other. The pixel structures are disposed on the inner surface of the front substrate, and each pixel structure is electrically connected to one of the scan lines and one of the data lines correspondingly. The photo-sensors are disposed on the inner surface of the front substrate. Each readout device is electrically connected to one of the photo-sensor correspondingly. The rear substrate is disposed opposite to the front substrate. The display medium is sealed between the front substrate and the rear substrate.

Abstract translation: 提供了包括前基板，扫描线，数据线，像素结构，光传感器，读出装置，后基板和显示介质的触摸感测显示面板。 前基板具有内表面。 扫描线和数据线位于前基板的内表面上并彼此相交。 像素结构设置在前基板的内表面上，并且每个像素结构相应地电连接到扫描线之一和数据线之一。 光传感器设置在前基板的内表面上。 每个读出装置相应地电连接到一个光电传感器。 后基板与前基板相对设置。 显示介质被密封在前基板和后基板之间。

公开(公告)号：US20140034951A1

公开(公告)日：2014-02-06

申请号：US14049194

申请日：2013-10-08

Applicant: Au Optronics Corporation

Inventor： An-Thung Cho ,  Wan-Yi Liu ,  Chia-Kai Chen ,  Wu-Hsiung Lin ,  Chun-Hsiun Chen ,  Wei-Ming Huang

IPC: H01L29/786

CPC classification number: H01L29/78651 ,  H01L21/02532 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02686 ,  H01L29/66068 ,  H01L29/66969 ,  H01L29/78684 ,  H01L29/7869

Abstract: A thin film transistor disposed on a substrate is provided. The thin film transistor includes a gate, a gate insulating layer, a silicon-rich channel layer, a source, and a drain. The gate is disposed on the substrate. The gate insulator is disposed over the gate. The silicon-rich channel layer is disposed above the gate, wherein the material of the silicon-rich channel layer is selected from a group consisting of silicon-rich silicon oxide (Si-rich SiOx), silicon-rich silicon nitride (Si-rich SiNx), silicon-rich silicon oxynitride (Si-rich SiOxNy), silicon-rich silicon carbide (Si-rich SiC) and silicon-rich silicon oxycarbide (Si-rich SiOC). The content (concentration) of silicon of the silicon-rich channel layer within a film depth between 10 nm to 170 nm ranges from about 1E23 atoms/cm3 to about 4E23 atoms/cm3. The source and the drain are connected with the silicon-rich channel layer.

Abstract translation: 设置在基板上的薄膜晶体管。 薄膜晶体管包括栅极，栅极绝缘层，富硅沟道层，源极和漏极。 栅极设置在基板上。 栅极绝缘体设置在栅极上。 富硅沟道层设置在栅极上方，其中富硅沟道层的材料选自富硅氧化硅（富Si），富含硅的氮化硅（富Si） SiN x），富硅氧氮化硅（富Si的SiO x N y），富含硅的碳化硅（富Si的SiC）和富硅的碳氧化碳（富Si的SiOC）。 在10nm至170nm的膜深度内的富硅沟道层的硅含量（浓度）范围为约1E23原子/ cm3至约4E23原子/ cm3。 源极和漏极与富硅沟道层连接。

公开(公告)号：US10126852B2

公开(公告)日：2018-11-13

申请号：US15252304

申请日：2016-08-31

Applicant: AU Optronics Corporation

Inventor： Chih-Hao Lin ,  An-Thung Cho ,  Pin-Miao Liu ,  Tsung-Tien Wu

IPC: G06F3/041 ,  G02F1/1333 ,  G09G3/34 ,  G09G3/36 ,  G02F1/1335 ,  G06F3/042

Abstract: A display device of the present invention includes a light source layer and a sensing unit layer. The light source layer has a display side and a sensing side at the backside of the display side. The light source layer includes a plurality of first light sources generating a first light, and a plurality of second light sources generating a second light. The first light at least partially emits toward the sensing side; the second light at least partially emits toward the display side. A second wavelength of the second light is different from a first wavelength of the first light. The sensing unit layer is disposed at the sensing side of the light source layer. In a sensing mode, the plurality of the first light sources is activated to generate and provide the first light for the sensing unit layer. In a displaying mode, the plurality of the second light sources is activated to generate the second light for displaying an image at the display side.

公开(公告)号：US20130270618A1

公开(公告)日：2013-10-17

申请号：US13831942

申请日：2013-03-15

Applicant: AU OPTRONICS CORPORATION

Inventor： Chi-Wen Fan ,  Tien-Hao Chang ,  Zao-Shi Zheng ,  Chun Chang ,  Wei-Peng Weng ,  An-Thung Cho ,  Jiun-Jye Chang

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14678

Abstract: A touch panel and fabricating method thereof are provided. The patterned transparent conductive layer, disposed on the substrate, includes first electrodes. The photo-sensing layers are disposed on the first electrodes. The first patterned conductive layer includes gate electrodes, scan lines and second electrodes. The gate electrodes and the scan lines are disposed on the substrate. The second electrodes are disposed on the photo-sensing layers. The first electrodes, the photo-sensing layers and the second electrodes constitute photo-sensors. The second patterned conductive layer includes source electrodes and drain electrodes, wherein the gate electrodes, the channel layers, the source electrodes and the drain electrodes constitute read-out transistors and each of the read-out transistors is electrically connected to the corresponding photo-sensor respectively.

Abstract translation: 提供了触摸面板及其制造方法。 设置在基板上的图案化透明导电层包括第一电极。 感光层设置在第一电极上。 第一图案化导电层包括栅电极，扫描线和第二电极。 栅电极和扫描线设置在基板上。 第二电极设置在感光层上。 第一电极，感光层和第二电极构成光传感器。 第二图案化导电层包括源电极和漏电极，其中栅电极，沟道层，源电极和漏电极构成读出晶体管，并且每个读出晶体管电连接到相应的光电传感器 分别。

公开(公告)号：US20130044082A1

公开(公告)日：2013-02-21

申请号：US13658826

申请日：2012-10-24

Applicant: Au Optronics Corporation

Inventor： Hsiang-Lin Lin ,  An-Thung Cho ,  Chih-Jen Hu ,  Wei-Ming Huang

IPC: G06F3/042

CPC classification number: G02F1/135 ,  H01J9/24

Abstract: A touch-sensing display panel including a front substrate, scan lines, data lines, pixel structures, photo-sensors, readout devices, a rear substrate and a display medium is provided. The front substrate has an inner surface. The scan lines and the data lines are on the inner surface of the front substrate and intersected to each other. The pixel structures are disposed on the inner surface of the front substrate, and each pixel structure is electrically connected to one of the scan lines and one of the data lines correspondingly. The photo-sensors are disposed on the inner surface of the front substrate. Each readout device is electrically connected to one of the photo-sensor correspondingly. The rear substrate is disposed opposite to the front substrate. The display medium is sealed between the front substrate and the rear substrate.

Abstract translation: 提供了包括前基板，扫描线，数据线，像素结构，光传感器，读出装置，后基板和显示介质的触摸感测显示面板。 前基板具有内表面。 扫描线和数据线位于前基板的内表面上并彼此相交。 像素结构设置在前基板的内表面上，并且每个像素结构相应地电连接到扫描线之一和数据线之一。 光传感器设置在前基板的内表面上。 每个读出装置相应地电连接到一个光电传感器。 后基板与前基板相对设置。 显示介质被密封在前基板和后基板之间。

公开(公告)号：US08748896B2

公开(公告)日：2014-06-10

申请号：US14049194

申请日：2013-10-08

Applicant: Au Optronics Corporation

Inventor： An-Thung Cho ,  Wan-Yi Liu ,  Chia-Kai Chen ,  Wu-Hsiung Lin ,  Chun-Hsiun Chen ,  Wei-Ming Huang

IPC: H01L29/04 ,  H01L29/10 ,  H01L31/00

CPC classification number: H01L29/78651 ,  H01L21/02532 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02686 ,  H01L29/66068 ,  H01L29/66969 ,  H01L29/78684 ,  H01L29/7869

Abstract: A thin film transistor disposed on a substrate is provided. The thin film transistor includes a gate, a gate insulating layer, a silicon-rich channel layer, a source, and a drain. The gate is disposed on the substrate. The gate insulator is disposed over the gate. The silicon-rich channel layer is disposed above the gate, wherein the material of the silicon-rich channel layer is selected from a group consisting of silicon-rich silicon oxide (Si-rich SiOx), silicon-rich silicon nitride (Si-rich SiNx), silicon-rich silicon oxynitride (Si-rich SiOxNy), silicon-rich silicon carbide (Si-rich SiC) and silicon-rich silicon oxycarbide (Si-rich SiOC). The content (concentration) of silicon of the silicon-rich channel layer within a film depth between 10 nm to 170 nm ranges from about 1E23 atoms/cm3 to about 4E23 atoms/cm3. The source and the drain are connected with the silicon-rich channel layer.

Abstract translation: 设置在基板上的薄膜晶体管。 薄膜晶体管包括栅极，栅极绝缘层，富硅沟道层，源极和漏极。 栅极设置在基板上。 栅极绝缘体设置在栅极上。 富硅沟道层设置在栅极上方，其中富硅沟道层的材料选自富硅氧化硅（富Si），富含硅的氮化硅（富Si） SiN x），富硅氧氮化硅（富Si的SiO x N y），富含硅的碳化硅（富Si的SiC）和富硅的碳氧化碳（富Si的SiOC）。 在10nm至170nm的膜深度内的富硅沟道层的硅含量（浓度）范围为约1E23原子/ cm3至约4E23原子/ cm3。 源极和漏极与富硅沟道层连接。

公开(公告)号：US09773914B2

公开(公告)日：2017-09-26

申请号：US15158042

申请日：2016-05-18

Applicant: AU Optronics Corporation

Inventor： Ching-Wen Chen ,  An-Thung Cho

IPC: H01L27/32 ,  H01L29/786 ,  H01L27/12 ,  H01L21/027 ,  H01L31/09 ,  H01L31/18 ,  H01L29/66

CPC classification number: H01L29/78651 ,  H01L21/0274 ,  H01L27/124 ,  H01L27/3227 ,  H01L29/66765 ,  H01L31/09 ,  H01L31/18

Abstract: An optical sensing device includes a thin film transistor disposed on a substrate, an optical sensor, a planar layer, and an organic light emitting diode. The optical sensor includes a metal electrode disposed on a gate dielectric layer of the thin film transistor and connecting to a drain electrode of the thin film transistor, an optical sensing layer disposed on the metal electrode, and a first transparent electrode disposed on the optical sensing layer. The planar layer covers at least a part of the thin film transistor and the optical sensor. The organic light emitting diode is disposed on the planar layer. The anode electrode and the cathode electrode of the organic light emitting diode are electrically coupled to a gate line and a data line respectively.

公开(公告)号：US09690971B2

公开(公告)日：2017-06-27

申请号：US15230983

申请日：2016-08-08

Applicant: AU Optronics Corporation

Inventor： Yi-Huan Liao ,  Chih-Hao Lin ,  Jhen-Yu You ,  Jhen-Fu Cho ,  Chun Chang ,  An-Thung Cho

IPC: H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  G06K9/00 ,  H01L31/032 ,  H01L31/109 ,  H01L27/146 ,  H01L31/16 ,  H01L31/18

CPC classification number: G06K9/0004 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14678 ,  H01L27/14683 ,  H01L31/032 ,  H01L31/09 ,  H01L31/1013 ,  H01L31/109 ,  H01L31/165 ,  H01L31/18

Abstract: A photo-sensing unit including a first electrode, a first insulation layer, a photo-sensing structure and a second electrode is provided. The first insulation layer covers the first electrode and has an opening exposing the first electrode. The photo-sensing structure is located on the first electrode and disposed in the opening of the first insulation layer. The photo-sensing structure includes a first photo-sensing layer and a second photo-sensing layer stacked with each other. A material of the first photo-sensing layer is SixGeyOz. A material of the second photo-sensing layer is SivOw. The second electrode covers the photo-sensing structure. A photo-sensing apparatus including the photo-sensing unit and a fabricating method of a photo-sensing unit are also provided.

公开(公告)号：US20170032167A1

公开(公告)日：2017-02-02

申请号：US15158042

申请日：2016-05-18

Applicant: AU Optronics Corporation

Inventor： Ching-Wen CHEN ,  An-Thung Cho

IPC: G06K9/00 ,  H01L27/12 ,  H01L51/52 ,  H01L29/786 ,  H01L31/09 ,  H01L31/18 ,  H01L51/56 ,  H01L29/66 ,  H01L27/32 ,  H01L21/027

CPC classification number: H01L29/78651 ,  H01L21/0274 ,  H01L27/124 ,  H01L27/3227 ,  H01L29/66765 ,  H01L31/09 ,  H01L31/18

Abstract: An optical sensing device includes a thin film transistor disposed on a substrate, an optical sensor, a planar layer, and an organic light emitting diode. The optical sensor includes a metal electrode disposed on a gate dielectric layer of the thin film transistor and connecting to a drain electrode of the thin film transistor, an optical sensing layer disposed on the metal electrode, and a first transparent electrode disposed on the optical sensing layer. The planar layer covers at least a part of the thin film transistor and the optical sensor. The organic light emitting diode is disposed on the planar layer. The anode electrode and the cathode electrode of the organic light emitting diode are electrically coupled to a gate line and a data line respectively.

Abstract translation: 光感测装置包括设置在基板上的薄膜晶体管，光学传感器，平面层和有机发光二极管。 光学传感器包括设置在薄膜晶体管的栅极电介质层上并连接到薄膜晶体管的漏极的金属电极，设置在金属电极上的光学感测层和设置在光学感测上的第一透明电极 层。 平面层覆盖薄膜晶体管和光学传感器的至少一部分。 有机发光二极管设置在平面层上。 有机发光二极管的阳极电极和阴极分别电耦合到栅极线和数据线。

公开(公告)号：US08946732B2

公开(公告)日：2015-02-03

申请号：US13831942

申请日：2013-03-15

Applicant: Au Optronics Corporation

Inventor： Chi-Wen Fan ,  Tien-Hao Chang ,  Zao-Shi Zheng ,  Chun Chang ,  Wei-Peng Weng ,  An-Thung Cho ,  Jiun-Jye Chang

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14678

Abstract: A touch panel and fabricating method thereof are provided. The patterned transparent conductive layer, disposed on the substrate, includes first electrodes. The photo-sensing layers are disposed on the first electrodes. The first patterned conductive layer includes gate electrodes, scan lines and second electrodes. The gate electrodes and the scan lines are disposed on the substrate. The second electrodes are disposed on the photo-sensing layers. The first electrodes, the photo-sensing layers and the second electrodes constitute photo-sensors. The second patterned conductive layer includes source electrodes and drain electrodes, wherein the gate electrodes, the channel layers, the source electrodes and the drain electrodes constitute read-out transistors and each of the read-out transistors is electrically connected to the corresponding photo-sensor respectively.

Abstract translation: 提供了触摸面板及其制造方法。 设置在基板上的图案化透明导电层包括第一电极。 感光层设置在第一电极上。 第一图案化导电层包括栅电极，扫描线和第二电极。 栅电极和扫描线设置在基板上。 第二电极设置在感光层上。 第一电极，感光层和第二电极构成光传感器。 第二图案化导电层包括源电极和漏电极，其中栅电极，沟道层，源电极和漏电极构成读出晶体管，并且每个读出晶体管电连接到相应的光电传感器 分别。