公开(公告)号：US20140034951A1

公开(公告)日：2014-02-06

申请号：US14049194

申请日：2013-10-08

Applicant: Au Optronics Corporation

Inventor： An-Thung Cho ,  Wan-Yi Liu ,  Chia-Kai Chen ,  Wu-Hsiung Lin ,  Chun-Hsiun Chen ,  Wei-Ming Huang

IPC: H01L29/786

CPC classification number: H01L29/78651 ,  H01L21/02532 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02686 ,  H01L29/66068 ,  H01L29/66969 ,  H01L29/78684 ,  H01L29/7869

Abstract: A thin film transistor disposed on a substrate is provided. The thin film transistor includes a gate, a gate insulating layer, a silicon-rich channel layer, a source, and a drain. The gate is disposed on the substrate. The gate insulator is disposed over the gate. The silicon-rich channel layer is disposed above the gate, wherein the material of the silicon-rich channel layer is selected from a group consisting of silicon-rich silicon oxide (Si-rich SiOx), silicon-rich silicon nitride (Si-rich SiNx), silicon-rich silicon oxynitride (Si-rich SiOxNy), silicon-rich silicon carbide (Si-rich SiC) and silicon-rich silicon oxycarbide (Si-rich SiOC). The content (concentration) of silicon of the silicon-rich channel layer within a film depth between 10 nm to 170 nm ranges from about 1E23 atoms/cm3 to about 4E23 atoms/cm3. The source and the drain are connected with the silicon-rich channel layer.

Abstract translation: 设置在基板上的薄膜晶体管。 薄膜晶体管包括栅极，栅极绝缘层，富硅沟道层，源极和漏极。 栅极设置在基板上。 栅极绝缘体设置在栅极上。 富硅沟道层设置在栅极上方，其中富硅沟道层的材料选自富硅氧化硅（富Si），富含硅的氮化硅（富Si） SiN x），富硅氧氮化硅（富Si的SiO x N y），富含硅的碳化硅（富Si的SiC）和富硅的碳氧化碳（富Si的SiOC）。 在10nm至170nm的膜深度内的富硅沟道层的硅含量（浓度）范围为约1E23原子/ cm3至约4E23原子/ cm3。 源极和漏极与富硅沟道层连接。

公开(公告)号：US09252167B2

公开(公告)日：2016-02-02

申请号：US14486069

申请日：2014-09-15

Applicant: AU Optronics Corporation

Inventor： Jia-Hong Ye ,  Ssu-Hui Lu ,  Wu-Hsiung Lin ,  Chao-Chien Chiu ,  Ming-Hsien Lee ,  Chia-Tien Peng ,  Wei-Ming Huang

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1255 ,  H01L27/1218 ,  H01L27/1248 ,  H01L29/78603

Abstract: An active device array substrate includes a flexible substrate, a gate electrode, a dielectric layer, a channel layer, a source electrode, a drain electrode, and a pixel electrode. The flexible substrate has a transistor region and a transparent region adjacent to each other. The gate electrode is disposed on the transistor region. The dielectric layer covers the flexible substrate and the gate electrode. A portion of the dielectric layer disposed on the gate electrode has a first thickness. Another portion of the dielectric layer disposed on the transparent region has a second thickness less than the first thickness. The channel layer is disposed above the gate electrode. The source electrode and the drain electrode are electrically connected to the channel layer. The pixel electrode is disposed on the dielectric layer which is disposed on the transparent region. The pixel electrode is electrically connected to the drain electrode.

Abstract translation: 有源器件阵列衬底包括柔性衬底，栅电极，电介质层，沟道层，源电极，漏电极和像素电极。 柔性基板具有彼此相邻的晶体管区域和透明区域。 栅电极设置在晶体管区域上。 电介质层覆盖柔性基板和栅电极。 布置在栅电极上的介电层的一部分具有第一厚度。 布置在透明区域上的介电层的另一部分具有小于第一厚度的第二厚度。 沟道层设置在栅电极的上方。 源电极和漏极电连接到沟道层。 像素电极设置在布置在透明区域上的电介质层上。 像素电极电连接到漏电极。

公开(公告)号：US08748896B2

公开(公告)日：2014-06-10

申请号：US14049194

申请日：2013-10-08

Applicant: Au Optronics Corporation

Inventor： An-Thung Cho ,  Wan-Yi Liu ,  Chia-Kai Chen ,  Wu-Hsiung Lin ,  Chun-Hsiun Chen ,  Wei-Ming Huang

IPC: H01L29/04 ,  H01L29/10 ,  H01L31/00

CPC classification number: H01L29/78651 ,  H01L21/02532 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02686 ,  H01L29/66068 ,  H01L29/66969 ,  H01L29/78684 ,  H01L29/7869

Abstract: A thin film transistor disposed on a substrate is provided. The thin film transistor includes a gate, a gate insulating layer, a silicon-rich channel layer, a source, and a drain. The gate is disposed on the substrate. The gate insulator is disposed over the gate. The silicon-rich channel layer is disposed above the gate, wherein the material of the silicon-rich channel layer is selected from a group consisting of silicon-rich silicon oxide (Si-rich SiOx), silicon-rich silicon nitride (Si-rich SiNx), silicon-rich silicon oxynitride (Si-rich SiOxNy), silicon-rich silicon carbide (Si-rich SiC) and silicon-rich silicon oxycarbide (Si-rich SiOC). The content (concentration) of silicon of the silicon-rich channel layer within a film depth between 10 nm to 170 nm ranges from about 1E23 atoms/cm3 to about 4E23 atoms/cm3. The source and the drain are connected with the silicon-rich channel layer.

Abstract translation: 设置在基板上的薄膜晶体管。 薄膜晶体管包括栅极，栅极绝缘层，富硅沟道层，源极和漏极。 栅极设置在基板上。 栅极绝缘体设置在栅极上。 富硅沟道层设置在栅极上方，其中富硅沟道层的材料选自富硅氧化硅（富Si），富含硅的氮化硅（富Si） SiN x），富硅氧氮化硅（富Si的SiO x N y），富含硅的碳化硅（富Si的SiC）和富硅的碳氧化碳（富Si的SiOC）。 在10nm至170nm的膜深度内的富硅沟道层的硅含量（浓度）范围为约1E23原子/ cm3至约4E23原子/ cm3。 源极和漏极与富硅沟道层连接。