-
公开(公告)号：US09423660B2
公开(公告)日：2016-08-23
申请号：US14641453
申请日：2015-03-09
Applicant: Au Optronics Corporation
Inventor： Te-Chun Huang , Kuo-Yu Huang , Yu-Han Huang , Maw-Song Chen , Wei-Ming Huang
CPC classification number: G02F1/1345 , G02F1/0121 , G02F1/0327 , G02F1/133 , G02F1/136286 , G09G3/3655 , G09G3/3674 , G09G3/3685 , G09G2300/0426 , H01L27/124
Abstract: A display panel is provided. The display panel has a display area and a peripheral area and includes a plurality of pixels, a plurality of data lines and a plurality of signal traces. The pixels are disposed on the display area and arranged in an array. The data lines extend from the display area to the peripheral area and are respectively electrically connected to a plurality of columns of pixel. The signal traces extend from the display area to the peripheral area and are parallel to the data lines. In addition, the data lines and the signal traces are respectively disposed between two columns of pixels, and the signal traces include a plurality of gate signal traces.
Abstract translation: 提供显示面板。 显示面板具有显示区域和外围区域，并且包括多个像素，多个数据线和多个信号迹线。 像素被布置在显示区域上并排列成阵列。 数据线从显示区域延伸到周边区域，并且分别电连接到多个像素列。 信号迹线从显示区域延伸到外围区域并且平行于数据线。 此外，数据线和信号迹线分别设置在两列像素之间，并且信号迹线包括多个栅极信号迹线。
-
公开(公告)号：US20130044082A1
公开(公告)日：2013-02-21
申请号：US13658826
申请日：2012-10-24
Applicant: Au Optronics Corporation
Inventor： Hsiang-Lin Lin , An-Thung Cho , Chih-Jen Hu , Wei-Ming Huang
IPC: G06F3/042
Abstract: A touch-sensing display panel including a front substrate, scan lines, data lines, pixel structures, photo-sensors, readout devices, a rear substrate and a display medium is provided. The front substrate has an inner surface. The scan lines and the data lines are on the inner surface of the front substrate and intersected to each other. The pixel structures are disposed on the inner surface of the front substrate, and each pixel structure is electrically connected to one of the scan lines and one of the data lines correspondingly. The photo-sensors are disposed on the inner surface of the front substrate. Each readout device is electrically connected to one of the photo-sensor correspondingly. The rear substrate is disposed opposite to the front substrate. The display medium is sealed between the front substrate and the rear substrate.
Abstract translation: 提供了包括前基板，扫描线，数据线，像素结构，光传感器，读出装置，后基板和显示介质的触摸感测显示面板。 前基板具有内表面。 扫描线和数据线位于前基板的内表面上并彼此相交。 像素结构设置在前基板的内表面上，并且每个像素结构相应地电连接到扫描线之一和数据线之一。 光传感器设置在前基板的内表面上。 每个读出装置相应地电连接到一个光电传感器。 后基板与前基板相对设置。 显示介质被密封在前基板和后基板之间。
-
公开(公告)号：US12008831B2
公开(公告)日：2024-06-11
申请号：US17355179
申请日：2021-06-23
Applicant: Au Optronics Corporation
Inventor： Ming-Yao Chen , Jui-Chi Lo , Wei-Ming Huang
CPC classification number: G06V40/1306 , H01L27/1255
Abstract: A sensing device substrate includes a substrate and a sensing device. The sensing device is disposed on the substrate and includes a first electrode, a second electrode, a sensing layer, a conductive layer, and a first insulating layer. The first electrode is located on the substrate. The second electrode is overlapped with the first electrode. The sensing layer is located between the second electrode and the first electrode. The conductive layer is overlapped with the second electrode and electrically connected to the first electrode. The conductive layer has a first opening, and the first opening is overlapped with the sensing layer. The first insulating layer is located between the conductive layer and the second electrode. A display apparatus including the sensing device substrate is also provided.
-
公开(公告)号：US09001281B2
公开(公告)日：2015-04-07
申请号：US13658826
申请日：2012-10-24
Applicant: Au Optronics Corporation
Inventor： Hsiang-Lin Lin , An-Thung Cho , Chih-Jen Hu , Wei-Ming Huang
IPC: G02F1/1335 , G02F1/135 , H01J9/24
Abstract: A touch-sensing display panel including a front substrate, scan lines, data lines, pixel structures, photo-sensors, readout devices, a rear substrate and a display medium is provided. The front substrate has an inner surface. The scan lines and the data lines are on the inner surface of the front substrate and intersected to each other. The pixel structures are disposed on the inner surface of the front substrate, and each pixel structure is electrically connected to one of the scan lines and one of the data lines correspondingly. The photo-sensors are disposed on the inner surface of the front substrate. Each readout device is electrically connected to one of the photo-sensor correspondingly. The rear substrate is disposed opposite to the front substrate. The display medium is sealed between the front substrate and the rear substrate.
Abstract translation: 提供了包括前基板，扫描线，数据线，像素结构，光传感器，读出装置，后基板和显示介质的触摸感测显示面板。 前基板具有内表面。 扫描线和数据线位于前基板的内表面上并彼此相交。 像素结构设置在前基板的内表面上，并且每个像素结构相应地电连接到扫描线之一和数据线之一。 光传感器设置在前基板的内表面上。 每个读出装置相应地电连接到一个光电传感器。 后基板与前基板相对设置。 显示介质被密封在前基板和后基板之间。
-
Patent Agency Ranking
公开(公告)号：US20140034951A1
公开(公告)日：2014-02-06
申请号：US14049194
申请日：2013-10-08
Applicant: Au Optronics Corporation
Inventor： An-Thung Cho , Wan-Yi Liu , Chia-Kai Chen , Wu-Hsiung Lin , Chun-Hsiun Chen , Wei-Ming Huang
IPC: H01L29/786
CPC classification number: H01L29/78651 , H01L21/02532 , H01L21/02565 , H01L21/0262 , H01L21/02686 , H01L29/66068 , H01L29/66969 , H01L29/78684 , H01L29/7869
Abstract: A thin film transistor disposed on a substrate is provided. The thin film transistor includes a gate, a gate insulating layer, a silicon-rich channel layer, a source, and a drain. The gate is disposed on the substrate. The gate insulator is disposed over the gate. The silicon-rich channel layer is disposed above the gate, wherein the material of the silicon-rich channel layer is selected from a group consisting of silicon-rich silicon oxide (Si-rich SiOx), silicon-rich silicon nitride (Si-rich SiNx), silicon-rich silicon oxynitride (Si-rich SiOxNy), silicon-rich silicon carbide (Si-rich SiC) and silicon-rich silicon oxycarbide (Si-rich SiOC). The content (concentration) of silicon of the silicon-rich channel layer within a film depth between 10 nm to 170 nm ranges from about 1E23 atoms/cm3 to about 4E23 atoms/cm3. The source and the drain are connected with the silicon-rich channel layer.
Abstract translation: 设置在基板上的薄膜晶体管。 薄膜晶体管包括栅极，栅极绝缘层，富硅沟道层，源极和漏极。 栅极设置在基板上。 栅极绝缘体设置在栅极上。 富硅沟道层设置在栅极上方，其中富硅沟道层的材料选自富硅氧化硅（富Si），富含硅的氮化硅（富Si） SiN x），富硅氧氮化硅（富Si的SiO x N y），富含硅的碳化硅（富Si的SiC）和富硅的碳氧化碳（富Si的SiOC）。 在10nm至170nm的膜深度内的富硅沟道层的硅含量（浓度）范围为约1E23原子/ cm3至约4E23原子/ cm3。 源极和漏极与富硅沟道层连接。
-
公开(公告)号：US20160155752A1
公开(公告)日：2016-06-02
申请号：US14641453
申请日：2015-03-09
Applicant: Au Optronics Corporation
Inventor： Te-Chun Huang , Kuo-Yu Huang , Yu-Han Huang , Maw-Song Chen , Wei-Ming Huang
IPC: H01L27/12
CPC classification number: G02F1/1345 , G02F1/0121 , G02F1/0327 , G02F1/133 , G02F1/136286 , G09G3/3655 , G09G3/3674 , G09G3/3685 , G09G2300/0426 , H01L27/124
Abstract: A display panel is provided. The display panel has a display area and a peripheral area and includes a plurality of pixels, a plurality of data lines and a plurality of signal traces. The pixels are disposed on the display area and arranged in an array. The data lines extend from the display area to the peripheral area and are respectively electrically connected to a plurality of columns of pixel. The signal traces extend from the display area to the peripheral area and are parallel to the data lines. In addition, the data lines and the signal traces are respectively disposed between two columns of pixels, and the signal traces include a plurality of gate signal traces.
Abstract translation: 提供显示面板。 显示面板具有显示区域和外围区域，并且包括多个像素，多个数据线和多个信号迹线。 像素被布置在显示区域上并排列成阵列。 数据线从显示区域延伸到周边区域，并且分别电连接到多个像素列。 信号迹线从显示区域延伸到外围区域并且平行于数据线。 此外，数据线和信号迹线分别设置在两列像素之间，并且信号迹线包括多个栅极信号迹线。
-
公开(公告)号：US09252167B2
公开(公告)日：2016-02-02
申请号：US14486069
申请日：2014-09-15
Applicant: AU Optronics Corporation
Inventor： Jia-Hong Ye , Ssu-Hui Lu , Wu-Hsiung Lin , Chao-Chien Chiu , Ming-Hsien Lee , Chia-Tien Peng , Wei-Ming Huang
IPC: H01L27/12 , H01L29/786
CPC classification number: H01L27/1255 , H01L27/1218 , H01L27/1248 , H01L29/78603
Abstract: An active device array substrate includes a flexible substrate, a gate electrode, a dielectric layer, a channel layer, a source electrode, a drain electrode, and a pixel electrode. The flexible substrate has a transistor region and a transparent region adjacent to each other. The gate electrode is disposed on the transistor region. The dielectric layer covers the flexible substrate and the gate electrode. A portion of the dielectric layer disposed on the gate electrode has a first thickness. Another portion of the dielectric layer disposed on the transparent region has a second thickness less than the first thickness. The channel layer is disposed above the gate electrode. The source electrode and the drain electrode are electrically connected to the channel layer. The pixel electrode is disposed on the dielectric layer which is disposed on the transparent region. The pixel electrode is electrically connected to the drain electrode.
Abstract translation: 有源器件阵列衬底包括柔性衬底，栅电极，电介质层，沟道层，源电极，漏电极和像素电极。 柔性基板具有彼此相邻的晶体管区域和透明区域。 栅电极设置在晶体管区域上。 电介质层覆盖柔性基板和栅电极。 布置在栅电极上的介电层的一部分具有第一厚度。 布置在透明区域上的介电层的另一部分具有小于第一厚度的第二厚度。 沟道层设置在栅电极的上方。 源电极和漏极电连接到沟道层。 像素电极设置在布置在透明区域上的电介质层上。 像素电极电连接到漏电极。
-
公开(公告)号：US08748896B2
公开(公告)日：2014-06-10
申请号：US14049194
申请日：2013-10-08
Applicant: Au Optronics Corporation
Inventor： An-Thung Cho , Wan-Yi Liu , Chia-Kai Chen , Wu-Hsiung Lin , Chun-Hsiun Chen , Wei-Ming Huang
CPC classification number: H01L29/78651 , H01L21/02532 , H01L21/02565 , H01L21/0262 , H01L21/02686 , H01L29/66068 , H01L29/66969 , H01L29/78684 , H01L29/7869
Abstract: A thin film transistor disposed on a substrate is provided. The thin film transistor includes a gate, a gate insulating layer, a silicon-rich channel layer, a source, and a drain. The gate is disposed on the substrate. The gate insulator is disposed over the gate. The silicon-rich channel layer is disposed above the gate, wherein the material of the silicon-rich channel layer is selected from a group consisting of silicon-rich silicon oxide (Si-rich SiOx), silicon-rich silicon nitride (Si-rich SiNx), silicon-rich silicon oxynitride (Si-rich SiOxNy), silicon-rich silicon carbide (Si-rich SiC) and silicon-rich silicon oxycarbide (Si-rich SiOC). The content (concentration) of silicon of the silicon-rich channel layer within a film depth between 10 nm to 170 nm ranges from about 1E23 atoms/cm3 to about 4E23 atoms/cm3. The source and the drain are connected with the silicon-rich channel layer.
Abstract translation: 设置在基板上的薄膜晶体管。 薄膜晶体管包括栅极，栅极绝缘层，富硅沟道层，源极和漏极。 栅极设置在基板上。 栅极绝缘体设置在栅极上。 富硅沟道层设置在栅极上方，其中富硅沟道层的材料选自富硅氧化硅（富Si），富含硅的氮化硅（富Si） SiN x），富硅氧氮化硅（富Si的SiO x N y），富含硅的碳化硅（富Si的SiC）和富硅的碳氧化碳（富Si的SiOC）。 在10nm至170nm的膜深度内的富硅沟道层的硅含量（浓度）范围为约1E23原子/ cm3至约4E23原子/ cm3。 源极和漏极与富硅沟道层连接。
-
公开(公告)号：US20220067323A1
公开(公告)日：2022-03-03
申请号：US17355179
申请日：2021-06-23
Applicant: Au Optronics Corporation
Inventor： Ming-Yao Chen , Jui-Chi Lo , Wei-Ming Huang
Abstract: A sensing device substrate includes a substrate and a sensing device. The sensing device is disposed on the substrate and includes a first electrode, a second electrode, a sensing layer, a conductive layer, and a first insulating layer. The first electrode is located on the substrate. The second electrode is overlapped with the first electrode. The sensing layer is located between the second electrode and the first electrode. The conductive layer is overlapped with the second electrode and electrically connected to the first electrode. The conductive layer has a first opening, and the first opening is overlapped with the sensing layer. The first insulating layer is located between the conductive layer and the second electrode. A display apparatus including the sensing device substrate is also provided.
-
-
-
-
-
-
-
-
Search Results
9
records
(took 0.013 seconds)
