公开(公告)号：US20060243984A1

公开(公告)日：2006-11-02

申请号：US11405368

申请日：2006-04-17

申请人： Avinash Gupta ,  Edward Semenas ,  Ilya Zwieback ,  Donovan Barrett ,  Andrew Souzis

发明人： Avinash Gupta ,  Edward Semenas ,  Ilya Zwieback ,  Donovan Barrett ,  Andrew Souzis

IPC分类号： H01L31/0312

CPC分类号： C30B29/36 ,  C30B23/00 ,  Y10T117/10 ,  Y10T117/1008 ,  Y10T117/1016 ,  Y10T117/108

摘要： In a physical vapor transport method and system, a growth chamber charged with source material and a seed crystal in spaced relation is provided. At least one capsule having at least one capillary extending between an interior thereof and an exterior thereof, wherein the interior of the capsule is charged with a dopant, is also provided. Each capsule is installed in the growth chamber. Through a growth reaction carried out in the growth chamber following installation of each capsule therein, a crystal is formed on the seed crystal using the source material, wherein the formed crystal is doped with the dopant.

摘要翻译： 在物理蒸气传输方法和系统中，提供了充满源材料的生长室和间隔开的晶种。 至少一个胶囊具有在其内部和外部之间延伸的至少一个毛细管，其中胶囊的内部充有掺杂剂。 每个胶囊安装在生长室中。 通过在每个胶囊安装之后在生长室中进行的生长反应，使用源材料在晶种上形成晶体，其中所形成的晶体掺杂有掺杂剂。

公开(公告)号：US20220002906A1

公开(公告)日：2022-01-06

申请号：US17447742

申请日：2021-09-15

申请人： Avinash Gupta ,  Ilya Zwieback ,  Edward Semenas ,  Marcus Getkin ,  Patrick Flynn

发明人： Avinash Gupta ,  Ilya Zwieback ,  Edward Semenas ,  Marcus Getkin ,  Patrick Flynn

IPC分类号： C30B29/36 ,  C30B23/00

摘要： A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.

公开(公告)号：US20080072817A1

公开(公告)日：2008-03-27

申请号：US11900242

申请日：2007-09-11

申请人： Ilya Zwieback ,  Thomas Anderson ,  Avinash Gupta

发明人： Ilya Zwieback ,  Thomas Anderson ,  Avinash Gupta

IPC分类号： C30B29/10 ,  C30B25/00

CPC分类号： C30B23/00 ,  C30B29/36

摘要： In a crystal growth method, an enclosed growth crucible is provided inside of a growth chamber. The growth crucible has polycrystalline source material and a seed crystal disposed in spaced relation therein. The interior of the growth crucible is heated whereupon a temperature gradient forms between the source material and the seed crystal. The temperature gradient is sufficient to cause the source material to sublimate and be transported to the seed crystal where it precipitates on the seed crystal. A gas mixture is caused to flow into the growth crucible and between the polycrystalline source material and an interior surface of the growth crucible. The gas mixture reacts with an unwanted element in the body of the growth crucible to form a gaseous byproduct which then flows through the body of the growth crucible to the exterior of the growth crucible.

摘要翻译： 在晶体生长方法中，在生长室的内部设置封闭的生长坩埚。 生长坩埚具有多晶源材料和间隔开设置的晶种。 加热生长坩埚的内部，由此在源材料和晶种之间形成温度梯度。 温度梯度足以使源材料升华并被输送到籽晶上，在晶种上沉淀在晶种上。 导致气体混合物流入生长坩埚中并且在多晶源材料和生长坩埚的内表面之间。 气体混合物与生长坩埚的主体中的不需要的元素反应以形成气态副产物，然后气体副产物通过生长坩埚的主体流到生长坩埚的外部。

公开(公告)号：US08871025B2

公开(公告)日：2014-10-28

申请号：US12441583

申请日：2007-09-27

申请人： Avinash Gupta ,  Utpal K. Chakrabarti ,  Jihong Chen ,  Edward Semenas ,  Ping Wu

发明人： Avinash Gupta ,  Utpal K. Chakrabarti ,  Jihong Chen ,  Edward Semenas ,  Ping Wu

IPC分类号： C30B28/14 ,  C30B29/36 ,  C30B23/00

CPC分类号： C30B29/36 ,  C30B23/002 ,  C30B23/005

摘要： In a crystal growth method, a seed crystal 8 and a source material 4 are provided in spaced relation inside of a growth crucible 6. Starting conditions for the growth of a crystal 14 in the growth crucible 6 are then established therein. The starting conditions include: a suitable gas inside the growth crucible 6, a suitable pressure of the gas inside the growth crucible 6, and a suitable temperature in the growth crucible 6 that causes the source material 4 to sublimate and be transported via a temperature gradient in the growth crucible 6 to the seed crystal 8 where the sublimated source material precipitates. During growth of the crystal 14 inside the growth crucible 6, at least one of the following growth conditions are intermittently changed inside the growth crucible 6 a plurality of times: the gas in the growth crucible 6, the pressure of the gas in the growth crucible 6, and the temperature in the growth crucible 6.

摘要翻译： 在晶体生长方法中，种子晶体8和源材料4以生长坩埚6内的间隔关系设置。然后在其中建立用于在生长坩埚6中生长晶体14的起始条件。 起始条件包括：生长坩埚6内的合适气体，生长坩埚6内部的气体的适当压力，以及生长坩埚6中适当的温度，其使得源材料4升华并经由温度梯度 在生长坩埚6中，升华的源材料析出的晶种8。 在生长坩埚6内生长晶体14期间，生长坩埚6内的至少一个以下生长条件间歇性地变化：生长坩埚6中的气体，生长坩埚中的气体压力 6，以及生长坩埚6中的温度。

公开(公告)号：US20100031877A1

公开(公告)日：2010-02-11

申请号：US12441583

申请日：2007-09-27

申请人： Avinash Gupta ,  Utpal K. Chakrabarti ,  Jihong Chen ,  Edward Semenas ,  Ping Wu

发明人： Avinash Gupta ,  Utpal K. Chakrabarti ,  Jihong Chen ,  Edward Semenas ,  Ping Wu

IPC分类号： C30B23/02

CPC分类号： C30B29/36 ,  C30B23/002 ,  C30B23/005

摘要： In a crystal growth method, a seed crystal 8 and a source material 4 are provided in spaced relation inside of a growth crucible 6. Starting conditions for the growth of a crystal 14 in the growth crucible 6 are then established therein. The starting conditions include: a suitable gas inside the growth crucible 6, a suitable pressure of the gas inside the growth crucible 6, and a suitable temperature in the growth crucible 6 that causes the source material 4 to sublimate and be transported via a temperature gradient in the growth crucible 6 to the seed crystal 8 where the sublimated source material precipitates. During growth of the crystal 14 inside the growth crucible 6, at least one of the following growth conditions are intermittently changed inside the growth crucible 6 a plurality of times: the gas in the growth crucible 6, the pressure of the gas in the growth crucible 6, and the temperature in the growth crucible 6.

摘要翻译： 在晶体生长方法中，种子晶体8和源材料4以生长坩埚6内的间隔关系设置。然后在其中建立用于在生长坩埚6中生长晶体14的起始条件。 起始条件包括：生长坩埚6内的合适气体，生长坩埚6内部的气体的适当压力，以及生长坩埚6中适当的温度，其使得源材料4升华并经由温度梯度 在生长坩埚6中，升华的源材料析出的晶种8。 在生长坩埚6内生长晶体14期间，生长坩埚6内的至少一个以下生长条件间歇性地变化：生长坩埚6中的气体，生长坩埚中的气体压力 6，以及生长坩埚6中的温度。

公开(公告)号：US07903819B2

公开(公告)日：2011-03-08

申请号：US11852154

申请日：2007-09-07

申请人： Avinash Gupta

发明人： Avinash Gupta

IPC分类号： H04L9/00

CPC分类号： G06F17/30336

摘要： In one embodiment of the present invention, storing a plurality of key value pairs may be accomplished by first, for each of two or more quantities of most significant bits, determining how much overall memory usage will be saved upon removal of the corresponding quantity of most significant bits from each key in the plurality of key value pairs. Then, for the quantity of most significant bits determined to have the most overall memory usage savings, the quantity of most significant bits may be removed from each key in the plurality of key value pairs. Then a first auxiliary data structure may be formed, wherein the first auxiliary data structure contains the removed quantity of most significant bits from each key in the plurality of key value pairs and pointers to the remaining bits of each key of the plurality of keys in a primary data structure.

摘要翻译： 在本发明的一个实施例中，存储多个键值对可以通过首先针对两个或更多个最高有效位中的每一个来确定，以确定在删除相应数量的最大值时可以节省多少总体存储器使用量 来自多个键值对中的每个键的有效位。 然后，对于确定具有最大的总体存储器使用节省的最高有效位的数量，可以从多个键值对中的每个键去除最高有效位的数量。 然后，可以形成第一辅助数据结构，其中第一辅助数据结构包含多个键值对中的每个键的去除量的最高有效位，以及指向多个键中的多个键的每个键的剩余位的指针 主要数据结构。

公开(公告)号：US08287720B2

公开(公告)日：2012-10-16

申请号：US12490089

申请日：2009-06-23

申请人： Mario C. Baldassari ,  Ujjal K. Mukherjee ,  Avinash Gupta

发明人： Mario C. Baldassari ,  Ujjal K. Mukherjee ,  Avinash Gupta

IPC分类号： C10G67/04 ,  C10G65/14 ,  C10G21/00 ,  C10G47/00 ,  C10G49/22

CPC分类号： C10G67/049 ,  C10G21/003 ,  C10G47/00 ,  C10G67/00 ,  C10G2300/107 ,  C10G2300/1077 ,  C10G2300/206 ,  C10G2300/301 ,  C10G2300/42

摘要： Processes for upgrading resid hydrocarbon feeds are disclosed. The upgrading processes may include: hydrocracking a resid in a first reaction stage to form a first stage effluent; hydrocracking a deasphalted oil fraction in a second reaction stage to form a second stage effluent; fractionating the first stage effluent and the second stage effluent to recover at least one distillate hydrocarbon fraction and a resid hydrocarbon fraction; feeding the resid hydrocarbon fraction to a solvent deasphalting unit to provide an asphaltene fraction and the deasphalted oil fraction.

摘要翻译： 公开了用于升级残油烃进料的方法。 升级过程可以包括：在第一反应阶段加氢裂化残渣以形成第一级流出物; 在第二反应阶段加氢裂解脱沥青油馏分以形成第二阶段流出物; 分馏第一级流出物和第二级流出物以回收至少一种馏出物烃馏分和残留烃馏分; 将残余烃馏分进料到溶剂脱沥青单元以提供沥青质馏分和脱沥青油馏分。

公开(公告)号：US20090095654A1

公开(公告)日：2009-04-16

申请号：US12268249

申请日：2008-11-10

申请人： Avinash Gupta ,  Shankar Vaidyanathan

发明人： Avinash Gupta ,  Shankar Vaidyanathan

IPC分类号： C10G65/12

CPC分类号： C10G65/10 ,  C10G2400/04

摘要： The instant invention comprises a hydroprocessing method having at least two stages. The first stage employs a hydroprocessing catalyst which may contain hydrotreating catalyst, hydrocracking catalyst, or a combination of both. The subsequent stage is limited to hydrocracking. Conversion in subsequent stages may be improved by the addition of multiple reaction zones for hydrocracking, with flash separation zones between the stages. Middle distillate yield is thereby increased and the volume of the recycle stream is reduced. This invention reduces the need for equipment which would normally be required for a large recycle stream.

摘要翻译： 本发明包括具有至少两个阶段的加氢处理方法。 第一阶段采用加氢处理催化剂，其可以含有加氢处理催化剂，加氢裂化催化剂或两者的组合。 后续阶段仅限于加氢裂化。 后续阶段的转化可以通过加入多个反应区用于加氢裂化而改善，其中阶段之间具有闪蒸分离区。 因此中间馏分产率增加，并且再循环料流的体积减少。 本发明减少了对大循环流通常需要的设备的需求。

公开(公告)号：US09441174B2

公开(公告)日：2016-09-13

申请号：US13491147

申请日：2012-06-07

申请人： Mario C. Baldassari ,  Ujjal K. Mukherjee ,  Avinash Gupta

发明人： Mario C. Baldassari ,  Ujjal K. Mukherjee ,  Avinash Gupta

IPC分类号： C10G67/04 ,  C10G65/14 ,  C10G21/00 ,  C10G47/00 ,  C10G49/22

CPC分类号： C10G67/049 ,  C10G21/003 ,  C10G47/00 ,  C10G67/00 ,  C10G2300/107 ,  C10G2300/1077 ,  C10G2300/206 ,  C10G2300/301 ,  C10G2300/42

摘要： Processes for upgrading resid hydrocarbon feeds are disclosed. The upgrading processes may include: hydrocracking a resid in a first reaction stage to form a first stage effluent; hydrocracking a deasphalted oil fraction in a second reaction stage to form a second stage effluent; fractionating the first stage effluent and the second stage effluent to recover at least one distillate hydrocarbon fraction and a resid hydrocarbon fraction; feeding the resid hydrocarbon fraction to a solvent deasphalting unit to provide an asphaltene fraction and the deasphalted oil fraction.

摘要翻译： 公开了用于升级残油烃进料的方法。 升级过程可以包括：在第一反应阶段加氢裂化残渣以形成第一级流出物; 在第二反应阶段加氢裂解脱沥青油馏分以形成第二阶段流出物; 分馏第一级流出物和第二级流出物以回收至少一种馏出物烃馏分和残留烃馏分; 将残余烃馏分进料到溶剂脱沥青单元以提供沥青质馏分和脱沥青油馏分。

公开(公告)号：US5122260A

公开(公告)日：1992-06-16

申请号：US295006

申请日：1989-01-09

申请人： Avinash Gupta ,  Marvin I. Greene

发明人： Avinash Gupta ,  Marvin I. Greene

IPC分类号： C10G1/00

CPC分类号： C10G1/006

摘要： In the two stage liquefaction of a carbonaceous solid such as coal wherein coal is liquefied in a first stage in the presence of a liquefaction solvent and the first stage effluent is hydrogenated in the presence of a supported hydrogenation catalyst in a second stage, catalyst which has been previously employed in the second stage and comminuted to a particle size distribution equivalent to 100% passing through U.S. 100 Mesh, is passed to the first stage to improve the overall operation.

摘要翻译： 在煤液中的碳质固体的两阶段液化中，其中在液化溶剂存在下，在第一阶段液化了煤，第一阶段流出物在第二阶段的负载式氢化催化剂存在下被氢化，所述催化剂具有 以前在第二阶段被雇用，粉碎成相当于100％通过美国100网的粒度分布，被传递到第一阶段以改善整体运作。