公开(公告)号：US20200266032A1

公开(公告)日：2020-08-20

申请号：US16791308

申请日：2020-02-14

Applicant: Axcelis Technologies, Inc.

Inventor： James DeLuca ,  Andy Ray ,  Neil Demario ,  Rosario Mollica

IPC: H01J37/317 ,  H01J37/05

Abstract: An ion implantation has an ion source and a mass analyzer configured to form and mass analyze an ion beam. A bending element is positioned downstream of the mass analyzer, and respective first and second measurement apparatuses are positioned downstream and upstream of the bending element and configured to determine a respective first and second ion beam current of the ion beam. A workpiece scanning apparatus scans the workpiece through the ion beam. A controller is configured to determine an implant current of the ion beam at the workpiece and to control the workpiece scanning apparatus to control a scan velocity of the workpiece based on the implant current. The determination of the implant current of the ion beam is based, at least in part, on the first ion beam current and second ion beam current.

公开(公告)号：US11646175B2

公开(公告)日：2023-05-09

申请号：US16791308

申请日：2020-02-14

Applicant: Axcelis Technologies, Inc.

Inventor： James DeLuca ,  Andy Ray ,  Neil Demario ,  Rosario Mollica

IPC: H01J37/317 ,  H01J37/05 ,  H01J37/304 ,  H01J37/244 ,  H01J37/24 ,  H01J37/32

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/243 ,  H01J37/244 ,  H01J37/304 ,  H01J37/32357 ,  H01J2237/24535 ,  H01J2237/31701

Abstract: An ion implantation has an ion source and a mass analyzer configured to form and mass analyze an ion beam. A bending element is positioned downstream of the mass analyzer, and respective first and second measurement apparatuses are positioned downstream and upstream of the bending element and configured to determine a respective first and second ion beam current of the ion beam. A workpiece scanning apparatus scans the workpiece through the ion beam. A controller is configured to determine an implant current of the ion beam at the workpiece and to control the workpiece scanning apparatus to control a scan velocity of the workpiece based on the implant current. The determination of the implant current of the ion beam is based, at least in part, on the first ion beam current and second ion beam current.