公开(公告)号：US10529820B2

公开(公告)日：2020-01-07

申请号：US14800387

申请日：2015-07-15

Applicant: BAE Systems Information and Electronic Systems Integration Inc.

Inventor： Kanin Chu ,  Pane Chane Chao ,  Carlton T Creamer

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/768 ,  H01L29/778 ,  H01L27/12 ,  H01L23/373 ,  H01L21/20 ,  H01L21/683 ,  H01L21/04 ,  H01L29/20

Abstract: A GaN on diamond wafer and method for manufacturing the same is provided. The method comprising: disposing a GaN device or wafer on a substrate, having a nucleation layer disposed between the substrate and a GaN layer; affixing the device to a handling wafer; removing the substrate and substantially all the nucleation layer; and bonding the GaN layer to a diamond substrate.

公开(公告)号：US20190043709A1

公开(公告)日：2019-02-07

申请号：US14800387

申请日：2015-07-15

Applicant: BAE Systems Information and Electronic Systems Integration Inc.

Inventor： Kanin Chu ,  Pane Chane Chao ,  Carlton T. Creamer

IPC: H01L21/02 ,  H01L21/768 ,  H01L29/16 ,  H01L29/778

CPC classification number: H01L29/66431 ,  H01L21/0254 ,  H01L21/0475 ,  H01L21/2007 ,  H01L21/2011 ,  H01L21/6835 ,  H01L21/76876 ,  H01L23/3732 ,  H01L27/1266 ,  H01L29/2003 ,  H01L29/778 ,  H01L29/7786 ,  H01L2221/68327

Abstract: A GaN on diamond wafer and method for manufacturing the same is provided. The method comprising: disposing a GaN device or wafer on a substrate, having a nucleation layer disposed between the substrate and a GaN layer; affixing the device to a handling wafer; removing the substrate and substantially all the nucleation layer; and bonding the GaN layer to a diamond substrate.