公开(公告)号：US20190043709A1

公开(公告)日：2019-02-07

申请号：US14800387

申请日：2015-07-15

申请人： BAE Systems Information and Electronic Systems Integration Inc.

发明人： Kanin Chu ,  Pane Chane Chao ,  Carlton T. Creamer

IPC分类号： H01L21/02 ,  H01L21/768 ,  H01L29/16 ,  H01L29/778

CPC分类号： H01L29/66431 ,  H01L21/0254 ,  H01L21/0475 ,  H01L21/2007 ,  H01L21/2011 ,  H01L21/6835 ,  H01L21/76876 ,  H01L23/3732 ,  H01L27/1266 ,  H01L29/2003 ,  H01L29/778 ,  H01L29/7786 ,  H01L2221/68327

摘要： A GaN on diamond wafer and method for manufacturing the same is provided. The method comprising: disposing a GaN device or wafer on a substrate, having a nucleation layer disposed between the substrate and a GaN layer; affixing the device to a handling wafer; removing the substrate and substantially all the nucleation layer; and bonding the GaN layer to a diamond substrate.

公开(公告)号：US20240339567A1

公开(公告)日：2024-10-10

申请号：US18748434

申请日：2024-06-20

申请人： Silanna UV Technologies Pte Ltd

发明人： Petar Atanackovic

IPC分类号： H01L33/26 ,  H01L21/20 ,  H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/18 ,  H01L33/50

CPC分类号： H01L33/26 ,  H01L21/2011 ,  H01L33/0012 ,  H01L33/005 ,  H01L33/06 ,  H01L33/12 ,  H01L33/18 ,  H01L33/504 ,  H01L33/002

摘要： The techniques described herein relate to an optoelectronic semiconductor light emitting device including a single crystal (AlxGa1-x)2O3 substrate including a monoclinic or corundum crystal symmetry, where 0

公开(公告)号：US20230317873A1

公开(公告)日：2023-10-05

申请号：US18024627

申请日：2020-10-10

申请人： ENKRIS SEMICONDUCTOR, INC.

发明人： Kai Cheng

IPC分类号： H01L21/768 ,  H01L33/00 ,  H01L21/02 ,  H01L21/20 ,  H01L33/10

CPC分类号： H01L33/0093 ,  H01L21/02354 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/2011 ,  H01L21/76871 ,  H01L33/0025 ,  H01L33/10 ,  H01L29/778

摘要： Provided is a method for stripping a substrate of a semiconductor structure, including: providing a substrate, a first A1N layer, a first AlGaN layer and a function layer from bottom to top; and irradiating the first AlGaN layer from the substrate with laser light to decompose the first AlGaN layer, such that the function layer is separated from the substrate and the first A1N layer. By the method, the first A1N layer and the first AlGaN layer respectively correspond to a nucleation layer and a buffer layer when the function layer is epitaxially grown, to improve the quality of the function layer.

公开(公告)号：US20160284608A1

公开(公告)日：2016-09-29

申请号：US15078902

申请日：2016-03-23

申请人： Soitec

发明人： Thierry Barge

IPC分类号： H01L21/86 ,  H01L21/263 ,  H01L29/06 ,  H01L21/762

CPC分类号： H01L21/86 ,  H01L21/02046 ,  H01L21/2011 ,  H01L21/263 ,  H01L21/76251 ,  H01L29/0649

摘要： The present disclosure relates to a method for reducing metal contamination on a surface of a substrate. The method involves plasma treatment of the surface of the substrate by ion bombardment, wherein a plasma of a supplied gas is generated, and a bombardment energy of the ions in the plasma is controlled by a radio frequency electromagnetic field. The bombardment energy of the ions is higher than a first threshold so as to tear the metal contamination from the surface of the substrate, and the bombardment energy of the ions is lower than a second threshold so as to prevent a surface quality degradation of the substrate surface.

摘要翻译： 本公开涉及一种用于减少衬底表面上的金属污染的方法。 该方法包括通过离子轰击对衬底的表面进行等离子体处理，其中产生供给气体的等离子体，通过射频电磁场控制等离子体中的离子的轰击能量。 离子的轰击能量高于第一阈值，以便从衬底的表面撕裂金属污染物，并且离子的轰击能量低于第二阈值，以便防止衬底的表面质量降低 表面。

公开(公告)号：US20240186381A1

公开(公告)日：2024-06-06

申请号：US18494315

申请日：2023-10-25

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

发明人： Hideyuki UEHIGASHI ,  Akiyoshi HORIAI

IPC分类号： H01L29/16 ,  H01L21/02 ,  H01L21/20 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/1608 ,  H01L21/02378 ,  H01L21/2011 ,  H01L29/41766 ,  H01L29/66068 ,  H01L29/7813

摘要： A silicon carbide substrate includes a substrate made of silicon carbide. An emission peak of the substrate at a wavelength of 650 to 750 nm is 4.5 times or more of an emission peak of the substrate at a wavelength of 385 to 408 nm in an electronic excitation. An integral value related to an emission peak of the substrate at a wavelength of 650 to 750 nm is 15 times or more of an integral value related to an emission peak of the substrate at a wavelength of 385 to 408 nm in an electronic excitation.

公开(公告)号：US09312166B2

公开(公告)日：2016-04-12

申请号：US14343515

申请日：2012-09-14

申请人： Shoji Akiyama ,  Kazutoshi Nagata

发明人： Shoji Akiyama ,  Kazutoshi Nagata

IPC分类号： H01L21/762 ,  H01L21/20 ,  H01L21/02

CPC分类号： H01L21/76254 ,  H01L21/02002 ,  H01L21/2007 ,  H01L21/2011 ,  H01L21/76243 ,  H01L21/76251

摘要： This invention provides a method for manufacturing composite wafers in which at least two composite wafers can be obtained from one donor wafer, and in which the chamfering step can be omitted. Provided is a method for manufacturing composite wafers comprising: bonding surfaces of at least two handle wafers and a surface of a donor wafer which has a diameter greater than or equal to a sum of diameters of the at least two handle wafers and which has a hydrogen ion implantation layer formed inside thereof by implanting hydrogen ions from the surface of the donor wafer, to obtain a bonded wafer; heating the bonded wafer at 200° C. to 400° C.; and detaching a film from the donor wafer along the hydrogen ion implantation layer of the heated bonded wafer, to obtain the composite wafers having the film transferred onto the at least two handle wafers.

摘要翻译： 本发明提供一种制造复合晶片的方法，其中可以从一个施主晶片获得至少两个复合晶片，并且其中可以省略倒角步骤。 提供了一种用于制造复合晶片的方法，包括：将至少两个手柄晶片的接合表面和施主晶片的表面直接大于或等于至少两个手柄晶片的直径之和，并且具有氢 通过从施主晶片的表面注入氢离子形成在其内部的离子注入层，以获得接合晶片; 将粘合晶片在200℃加热至400℃; 以及沿加热的接合晶片的氢离子注入层从施主晶片分离膜，以获得具有转移到至少两个处理晶片上的膜的复合晶片。

公开(公告)号：US20140264325A1

公开(公告)日：2014-09-18

申请号：US14204535

申请日：2014-03-11

申请人： U.S.A. as represented by the Administrator of the National Aeronautics and Space Administration

发明人： Yeonjoon Park ,  Sang Hyouk Choi

IPC分类号： H01L29/04 ,  H01L21/02 ,  H01L29/20 ,  H01L29/22

CPC分类号： H01L21/0242 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/2011 ,  H01L21/2053 ,  H01L21/2056 ,  H01L25/167 ,  H01L27/15 ,  H01L29/267 ,  H01L31/028 ,  H01L31/0336 ,  H01L31/03682 ,  H01L31/125 ,  H01L31/1804 ,  H01L31/1812 ,  H01L31/1848 ,  H01L31/1852 ,  H01L33/007 ,  H01L2924/0002 ,  Y02E10/544 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/00

摘要： One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.

摘要翻译： 本发明的一个方面是一种双面混合晶体结构，其包括具有（0001）C面并具有正面和背面的三角形蓝宝石晶片。 蓝宝石晶片对可见光和红外光谱的光线基本上是透明的，并且还提供了关于电磁射频噪声的绝缘。 在（0001）C面上具有与立方晶体方向对准的立方菱形结构的晶体Si材料层，并应变为菱面体，从而使选定的（SiGe）器件能够连续地集成到蓝宝石的后侧 晶圆。 双面混合晶体结构还包括在蓝宝石晶片的正面上的集成III-氮化物晶体层，其能够在蓝宝石晶片的正面上连续地集成所选择的III-氮化物器件。

公开(公告)号：US20120319161A1

公开(公告)日：2012-12-20

申请号：US13405634

申请日：2012-02-27

申请人： Toru GOTODA ,  Toshiyuki Oka ,  Shinya Nunoue ,  Kotaro Zaima ,  Hiroshi Ono ,  Hajime Nago

发明人： Toru GOTODA ,  Toshiyuki Oka ,  Shinya Nunoue ,  Kotaro Zaima ,  Hiroshi Ono ,  Hajime Nago

IPC分类号： H01L33/02

CPC分类号： H01L33/007 ,  H01L21/2011 ,  H01L33/0079 ,  H01L33/20 ,  H01S5/0213 ,  H01S5/0217 ,  H01S5/32341

摘要： According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include forming a nitride semiconductor layer including a light emitting layer on a first substrate having an unevenness, bonding the nitride layer to a second substrate, and separating the first substrate from the nitride layer by irradiating the nitride layer with light. The forming the nitride layer includes leaving a cavity in a space inside a depression of the unevenness while forming a thin film on the depression. The film includes a same material as part of the nitride layer. The separating includes causing the film to absorb part of the light so that intensity of the light applied to a portion of the nitride layer facing the depression is made lower than intensity of the light applied to a portion facing a protrusion of the unevenness.

摘要翻译： 根据一个实施例，公开了一种用于制造半导体发光器件的方法。 该方法可以包括在具有不平坦度的第一衬底上形成包括发光层的氮化物半导体层，将氮化物层接合到第二衬底，并且通过用光照射氮化物层将第一衬底与氮化物层分离。 形成氮化物层包括在凹凸的凹陷内的空间中留下空腔，同时在凹陷上形成薄膜。 该膜包括与氮化物层的一部分相同的材料。 分离包括使膜吸收部分光，使得施加到面向凹陷的氮化物层的一部分的光的强度低于施加到面对凹凸的突出部的部分的光的强度。

公开(公告)号：US20240072206A1

公开(公告)日：2024-02-29

申请号：US18500019

申请日：2023-11-01

申请人： Silanna UV Technologies Pte Ltd

发明人： Petar Atanackovic

IPC分类号： H01L33/26 ,  H01L21/20 ,  H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/18 ,  H01L33/50

CPC分类号： H01L33/26 ,  H01L21/2011 ,  H01L33/0012 ,  H01L33/005 ,  H01L33/06 ,  H01L33/12 ,  H01L33/18 ,  H01L33/504 ,  H01L33/002

摘要： In some embodiments, a composition of matter includes Li and F atoms within a single crystal Ga2O3 host including a monoclinic, orthorhombic, cubic, corundum, or hexagonal crystal symmetry, or within a single crystal LiGaO2 host including an orthorhombic or trigonal crystal symmetry. In some embodiments, a method includes sublimating a lithium fluoride (LiF) bulk crystal within a Knudsen cell to provide both Li and F and co-depositing the Li and F with an elemental Ga beam under an activated oxygen environment. The method can further include growing, on a growth surface of a substrate, an epitaxial layer including the Li, the F, the Ga, and the activated oxygen within an epitaxially formed Ga2O3 or LiGaO2 host.

公开(公告)号：US09824885B2

公开(公告)日：2017-11-21

申请号：US15264034

申请日：2016-09-13

申请人： The United States of America as represented by the Administrator of the National Aeronautics and Space Administration

发明人： Yeonjoon Park ,  Sang Hyouk Choi

IPC分类号： H01L21/86 ,  H01L21/02 ,  H01L29/267 ,  H01L31/0336 ,  H01L31/12 ,  H01L21/20 ,  H01L21/205 ,  H01L27/15 ,  H01L33/00 ,  H01L31/028 ,  H01L31/0368 ,  H01L31/18 ,  H01L25/16

CPC分类号： H01L21/0242 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/2011 ,  H01L21/2053 ,  H01L21/2056 ,  H01L25/167 ,  H01L27/15 ,  H01L29/267 ,  H01L31/028 ,  H01L31/0336 ,  H01L31/03682 ,  H01L31/125 ,  H01L31/1804 ,  H01L31/1812 ,  H01L31/1848 ,  H01L31/1852 ,  H01L33/007 ,  H01L2924/0002 ,  Y02E10/544 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/00

摘要： One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.