公开(公告)号：US09847220B2

公开(公告)日：2017-12-19

申请号：US14903138

申请日：2014-06-30

Applicant: BASF SE

Inventor： Mi Zhou ,  Fulvio G. Brunetti ,  Emmanuel Martin ,  Stefan Becker ,  Iori Doi ,  Raissa Nathania Santoso ,  Mei Shan Lam

IPC: H01L21/02 ,  C07D333/20 ,  C07D333/22 ,  C07C247/16 ,  H01L51/00 ,  H01L51/05 ,  C08J3/24 ,  C08J3/28 ,  C08K5/28 ,  C08K5/45 ,  C09D125/06

CPC classification number: H01L21/02118 ,  C07C247/16 ,  C07C2603/18 ,  C07D333/20 ,  C07D333/22 ,  C08J3/24 ,  C08J3/28 ,  C08J2325/06 ,  C08K5/28 ,  C08K5/45 ,  C09D125/06 ,  H01L51/0018 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545

Abstract: The present invention provides compounds of formula a process for their preparation, a solution comprising these compounds, a process for the preparation of a device using the solution, devices obtainable by the process and the use of the bis-azide-type compounds as cross-linkers.

公开(公告)号：US12187914B2

公开(公告)日：2025-01-07

申请号：US17293665

申请日：2019-11-11

Applicant: BASF SE

Inventor： Mi Zhou ,  Neil Gregory Pschirer ,  Hsin Tsao Tang ,  Ying Jung Chen ,  Sami Pirinen ,  Ari Karkkainen ,  Milja Hannu-Kuure ,  Oskari Maekimartti

IPC: C09D183/08 ,  C08G65/336 ,  C08G77/24 ,  C09D5/00

Abstract: The present invention relates to a process for preparing a thin film on a substrate in which a first precursor composition (FPC) and a second precursor composition (SPC) are combined, a thin layer of the combined first precursor composition (FPC) and second precursor composition (SPC) is formed on a substrate and the thin layer is cured, an article comprising said thin layer, a composition comprising said first precursor composition (FPC) and said second precursor composition (SPC), a kit-of-parts comprising said first precursor composition (FPC) and said second precursor composition (SPC) in two vessels and the use of said composition or kit-of-parts for preparing a thin film on a substrate and for preparing an optical or electrical coating.

公开(公告)号：US09644068B2

公开(公告)日：2017-05-09

申请号：US14653055

申请日：2013-12-12

Applicant: BASF SE ,  Polyera Corporation

Inventor： Ashok Kumar Mishra ,  Yucui Guan ,  Hiroyoshi Noguchi ,  Mi Zhou ,  Chongjun Jiao ,  Florian Dötz

IPC: C08G61/12 ,  H01L51/00 ,  C09B69/10 ,  H01L51/42 ,  H01L51/05

CPC classification number: C08G61/126 ,  C08G2261/12 ,  C08G2261/1412 ,  C08G2261/3223 ,  C08G2261/3241 ,  C08G2261/344 ,  C08G2261/411 ,  C08G2261/413 ,  C08G2261/51 ,  C08G2261/91 ,  C08G2261/92 ,  C09B69/109 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0053 ,  H01L51/0558 ,  H01L51/4253 ,  Y02E10/549

Abstract: The present invention provides a polymer comprising a unit of formula, wherein R1 and R2 are independently from each other C1-30-alkyl, C2-30-alkenyl, C2-30-alkynyl, phenyl or a 5 to 8 membered heterocyclic ring system, wherein each of the C1-30-alkyl, C2-30-alkenyl or C2-30-alkynyl group may be substituted with 1 to 10 substituents independently selected from the group consisting of halogen, —CN, —NO2, —OH, —NH2, —NH(C1-20-alkyl), —N(C1-20-alkyl)2, —NH—C(O)—(C1-20-alkyl), —S(O)2OH, —CHO, —C(O)—C1-20-alkyl, —C(O)OH, —C(O)—OC1-20-alkyl, —C(O)NH2, —CO(O)NH—C1-20-alkyl, —C(O)N(C1-20-alkyl)2, —O—C1-20-alkyl, —O—C(O)—C1-20-alkyl, —SiH3, SiH2(C1-20-alkyl), SiH(C1-20-alkyl)2, Si(C1-20-alkyl)3, C4-8-cycloalkyl, phenyl and a 5 to 8 membered heterocyclic ring system, and phenyl and the 5 to 8 membered heterocyclic ring system may be substituted with 1 to 5 C1-16-alkyl groups, is 1, 2 or 3 and n is an integer from 2 to 10'000, a process for the preparation of the polymer and an electronic device comprising the polymer.

公开(公告)号：US20160155633A1

公开(公告)日：2016-06-02

申请号：US14903138

申请日：2014-06-30

Applicant: BASF SE

Inventor： Mi Zhou ,  Fulvio G. Brunetti ,  Emmanuel Martin ,  Stefan Becker ,  Iori Doi ,  Raissa Nathania Santoso ,  Mei Shan Lam

IPC: H01L21/02 ,  C07D333/20 ,  C08K5/45 ,  C09D125/06 ,  C08K5/28 ,  C07C247/16 ,  C07D333/22

CPC classification number: H01L21/02118 ,  C07C247/16 ,  C07C2603/18 ,  C07D333/20 ,  C07D333/22 ,  C08J3/24 ,  C08J3/28 ,  C08J2325/06 ,  C08K5/28 ,  C08K5/45 ,  C09D125/06 ,  H01L51/0018 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545

Abstract: The present invention provides compounds of formula a process for their preparation, a solution comprising these compounds, a process for the preparation of a device using the solution, devices obtainable by the process and the use of the bis-azide-type compounds as cross-linkers.

Abstract translation: 本发明提供式Ⅰ化合物的方法，其制备方法，包含这些化合物的溶液，制备使用该溶液的装置的方法，通过该方法可获得的装置和双叠氮化物型化合物的用途， 接头。

公开(公告)号：US09231215B2

公开(公告)日：2016-01-05

申请号：US14399756

申请日：2013-04-29

Applicant: BASF SE

Inventor： Florian Doetz ,  Thomas Weitz ,  Jiao Chongjun ,  Hiroyoshi Noguchi ,  Ang Sweemeng ,  Mi Zhou ,  Doi Iori ,  Ashok Kumar Mishra

IPC: H01L51/00 ,  C07D333/52 ,  C07D333/72 ,  C07D209/86 ,  C07D307/78 ,  C07D307/87 ,  C07D495/04 ,  H01L51/42 ,  H01L51/50 ,  H01L51/05

CPC classification number: H01L51/0074 ,  C07D209/86 ,  C07D307/78 ,  C07D307/87 ,  C07D333/52 ,  C07D333/72 ,  C07D495/04 ,  H01L51/0508 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/42 ,  H01L51/5012 ,  Y02E10/549

Abstract: Phenacene compounds of formula (I) are disclosed. All the variables in the formula are the same as defined in the description. A thin film semiconductor comprising the above compounds, and a field effect transistor device, a photovoltaic device, an organic light emitting diode device and a unipolar or complementary circuit device comprising the thin film are also disclosed.

Abstract translation: 公开了式（I）的苯并苯化合物。 公式中的所有变量与说明书中定义的相同。 还公开了包含上述化合物的薄膜半导体，以及场效应晶体管器件，光电器件，有机发光二极管器件和包括该薄膜的单极或互补电路器件。

公开(公告)号：US10276815B2

公开(公告)日：2019-04-30

申请号：US15545776

申请日：2016-02-01

Applicant: BASF SE ,  National University of Singapore

Inventor： Mi Zhou ,  Peter K.-H. Ho ,  Lay-Lay Chua ,  Png Rui-Qi ,  Wei-Ling Seah

IPC: H01L51/05 ,  H01L51/00 ,  H01L51/10

Abstract: This invention provides a transistor device structure that incorporates a self-aligned doped contact formed by inserting a molecularly-thin layer of bonded anions between the semiconductor and the source-drain electrode array wherein the semiconductor is p-doped at the interface with the bonded-anion layer, and a method of making this structure using oxidant species incorporated into the molecularly-thin layer. The device shows ohmic hole injection and hole extraction at the contacts to give high-performance transistor characteristics with low contact resistance.

公开(公告)号：US10020456B2

公开(公告)日：2018-07-10

申请号：US15514180

申请日：2015-08-13

Applicant: BASF SE

Inventor： Emmanuel Martin ,  Fulvio G. Brunetti ,  Mi Zhou ,  Stefan Becker ,  Daniel Kaelblein ,  Chao Wu ,  Raimond Praptana ,  Konrad Knoll ,  Jordan Thomas Kopping

IPC: C08L27/12 ,  H01L51/05 ,  C09D125/18 ,  C08F12/32 ,  H01L51/00

CPC classification number: H01L51/052 ,  C08F12/20 ,  C08F12/22 ,  C08F12/32 ,  C08F112/14 ,  C08F212/14 ,  C09D125/18 ,  H01L51/004 ,  H01L51/0043 ,  C08F212/32

Abstract: Polymers comprising at least one unit of formula (1) wherein n is 0 or 1, m and p are independently from each other 0, 1, 2, 3, 4, 5 or 6, provided that the sum of n, m and p is at least 2, and n and p are not 0 at the same time, Ar1 and Ar2 are independently from each other C6-14-arylene or C6-14-aryl, which may be substituted with 1 to 4 substituents independently selected from the group consisting of C1-30-alkyl, C2-30-alkenyl, C2-30-alkynyl, C5-8-cycloalkyl, C6-14-aryl and 5 to 14 membered heteroaryl, and X1, X2 and X3 are independently from each other and at each occurrence O or S, compositions comprising these polymers, and electronic devices comprising a layer formed from the compositions. Preferably, the electronic device is an organic field effect transistor and the layer is the dielectric layer.

公开(公告)号：US09780315B2

公开(公告)日：2017-10-03

申请号：US14649039

申请日：2013-11-25

Applicant: BASF SE

Inventor： Chongjun Jiao ,  Iori Doi ,  Hans Jürg Kirner ,  Mi Zhou ,  Thomas Weitz ,  Ashok Kumar Mishra

IPC: H01L51/00 ,  H01L51/05 ,  C07D495/22

CPC classification number: H01L51/0074 ,  C07D495/22 ,  H01L51/0545 ,  H01L51/0558

Abstract: The present invention provides compounds of formula (1) wherein o is 1, 2 or 3, p is 0, 1 or 2, n is 0, 1 or 2, m is 0, 1 or 2, and A is a mono- or polycyclic ring system, which may contain at least one heteroatom, and an electronic device comprising the compounds as semiconducting material.

公开(公告)号：US20150126751A1

公开(公告)日：2015-05-07

申请号：US14399756

申请日：2013-04-29

Applicant: BASF SE

Inventor： Florian Doetz ,  Thomas Weitz ,  Jiao Chongjun ,  Hiroyoshi Noguchi ,  Ang Sweemeng ,  Mi Zhou ,  Doi Iori ,  Ashok Kumar Mishra

IPC: H01L51/00 ,  H01L51/50 ,  H01L51/42 ,  C07D495/04 ,  H01L51/05

CPC classification number: H01L51/0074 ,  C07D209/86 ,  C07D307/78 ,  C07D307/87 ,  C07D333/52 ,  C07D333/72 ,  C07D495/04 ,  H01L51/0508 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/42 ,  H01L51/5012 ,  Y02E10/549

Abstract: Phenacene compounds of formula (I) are disclosed. All the variables in the formula are the same as defined in the description. A thin film semiconductor comprising the above compounds, and a field effect transistor device, a photovoltaic device, an organic light emitting diode device and a unipolar or complementary circuit device comprising the thin film are also disclosed.

Abstract translation: 公开了式（I）的苯并苯化合物。 公式中的所有变量与说明书中定义的相同。 还公开了包含上述化合物的薄膜半导体，以及场效应晶体管器件，光电器件，有机发光二极管器件和包括该薄膜的单极或互补电路器件。