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公开(公告)号:US20250051949A1
公开(公告)日:2025-02-13
申请号:US18720906
申请日:2022-12-20
Applicant: BASF SE
Inventor: Charlotte EMNET , Lucas Benjamin HENDERSON , Alexander FLUEGEL , Sathana KITAYAPORN , Nadine ENGELHARDT
Abstract: Described herein is a composition for depositing copper on a semiconductor substrate, the composition including
(a) copper ions;
(b) a grain refiner of formula G1a or G1b or salts thereof; (c) a complexing agent; and
(d) optionally a buffer or a base to adjust the pH to a pH of from 7 to 13;
wherein
RG1 is selected from one or more H, C1 to C4 carboxyl, C1 to C4 alkyl, C1 to C6 alkoxy, halogen, and CN;
RG2 is selected from one or more H, C1 to C4 carboxyl, C1 to C4 alkyl, C1 to C6 alkoxy, halogen, and CN; and
XG1 is selected from C1 to 6 alkanediyl or a group —XG11—C(O)—O—XG12—;
XG11 is selected from a chemical bond or C1 to C4 alkandiyl;
XG12 is selected from a chemical bond or C1 to C4 alkandiyl; and wherein RG1 or RG2, comprises at least one C1 to C4 carboxyl group, or group XG1 is —XG11—C(O)—O—)—XG12—; wherein the pH of the composition is from 7 to 13.-
公开(公告)号:US20230265576A1
公开(公告)日:2023-08-24
申请号:US18005171
申请日:2021-06-30
Applicant: BASF SE
Inventor: Charlotte EMNET , Verena STREMPEL , Lucas Benjamin HENDERSON , Alexander FLUEGEL , Robert BRAENDLE , Sathana KITAYAPORN , Nadine ENGELHARDT
IPC: C25D3/38
CPC classification number: C25D3/38
Abstract: Described herein is an acidic aqueous composition for copper electroplating including
(a) copper ions;
(b) bromide ions; and
(c) at least one additive of formula S1
where
XS1 is selected from the group consisting of a linear, branched or cyclic C1-C12 alkanediyl;
RS1 is a monovalent
(a) poly(oxy(C3 to C6)alkylene)-block-poly(oxyethylene) group, or
(b) a poly(oxyethylene)-block-poly(oxy(C3 to C6)alkylene)-block-poly(oxyethylene) group;
RS2, RS3, RS4
(a) are selected from the group consisting of H, RS1, RS40, or
(b) RS3 and an adjacent group RS4 or, if n>2, two adjacent groups RS4 may together form a divalent group XS3;
RS40 is selected from the group consisting of (a) linear or branched C1-C20 alkyl, and (b) linear or branched C1-C20 alkenyl;
XS3 is selected from the group consisting of a linear, branched or cyclic C1-C12 alkanediyl; and
n is an integer of from 1 to 6.-
公开(公告)号:US20250051950A1
公开(公告)日:2025-02-13
申请号:US18721238
申请日:2022-12-20
Applicant: BASF SE
Inventor: Charlotte EMNET , Lucas Benjamin HENDERSON , Alexander FLUEGEL , Sathana KITAYAPORN , Nadine ENGELHARDT
IPC: C25D3/38 , C25D5/02 , C25D7/12 , H01L21/768 , H01L23/532
Abstract: Disclosed herein is a composition for depositing copper on a semiconductor substrate, the composition including (a) copper ions; (b) an additive of formula S1 (c) a complexing agent; and (d) optionally a buffer or base to adjust the pH to a pH of from 7 to 13; where the pH of the composition is from 7 to 13 and where the composition is free of any cyanide.
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